Wigner function study of a double quantum barrier resonant tunnelling diode

N. Kluksdahl, W. Pötz, U. Ravaioli, D. K. Ferry

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Abstract

Resonant tunnelling structures are receiving attention as a testbed for theoretical approaches to quantum transport. We present a Wigner function study of a double quantum barrier resonant tunnelling device formed by layers of AlGaAs in GaAs. Our study deals with the influence of the boundary conditions on the initial distribution as well as on the time-evolution of the system. We use a Gaussian wave packet to study the numerical effects of the boundaries. We attempt to solve the system in both the time-evolution and steady-state cases, including self-consistency in the potential.

Original languageEnglish (US)
Pages (from-to)41-45
Number of pages5
JournalSuperlattices and Microstructures
Volume3
Issue number1
DOIs
Publication statusPublished - 1987

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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