TY - GEN
T1 - Wideband class AB RF power amplifier using CMOS compatible SOI-MESFET device on 150nm technology
AU - Ghajar, M. Reza
AU - Wilk, Seth J.
AU - Lepkowski, William
AU - Bakkaloglu, Bertan
AU - Thornton, Trevor
PY - 2012/5/15
Y1 - 2012/5/15
N2 - In this paper, a wideband class AB power amplifier (PA) centered around 400MHz with 200MHz bandwidth, featuring a CMOS compatible MESFET on a 150 nm SOI technology is presented. It is the first board level demonstration of a SOI-MESFET based RF PA. SOI-MESFETs are an ideal candidate for integrated RF PAs due to their enhanced voltage capability and high cut-off frequency. The MESFET used in this design had a peak f T of 22 GHz and a soft-breakdown of 5V; however, different MESFETs on the same process have achieved a breakdown voltage up to 12V and peak f T up to 40 GHz. Comparatively, the standard CMOS transistors on this process have a maximum steady-state voltage of 1.95V. A peak PAE of 48% has been measured while delivering 17dBm of power to a 50 load. Also, a calibrated TOM3 model has been developed for simulation purposes.
AB - In this paper, a wideband class AB power amplifier (PA) centered around 400MHz with 200MHz bandwidth, featuring a CMOS compatible MESFET on a 150 nm SOI technology is presented. It is the first board level demonstration of a SOI-MESFET based RF PA. SOI-MESFETs are an ideal candidate for integrated RF PAs due to their enhanced voltage capability and high cut-off frequency. The MESFET used in this design had a peak f T of 22 GHz and a soft-breakdown of 5V; however, different MESFETs on the same process have achieved a breakdown voltage up to 12V and peak f T up to 40 GHz. Comparatively, the standard CMOS transistors on this process have a maximum steady-state voltage of 1.95V. A peak PAE of 48% has been measured while delivering 17dBm of power to a 50 load. Also, a calibrated TOM3 model has been developed for simulation purposes.
KW - MESFETs
KW - Power Amplifiers (PA)
KW - silicon-on-insulator (SOI)
UR - http://www.scopus.com/inward/record.url?scp=84860808854&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84860808854&partnerID=8YFLogxK
U2 - 10.1109/PAWR.2012.6174946
DO - 10.1109/PAWR.2012.6174946
M3 - Conference contribution
AN - SCOPUS:84860808854
SN - 9781457711541
T3 - RWW 2012 - Proceedings: 2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2012
SP - 21
EP - 24
BT - RWW 2012 - Proceedings
T2 - 2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2012
Y2 - 15 January 2012 through 18 January 2012
ER -