Abstract

In this paper, a wideband class AB power amplifier (PA) centered around 400MHz with 200MHz bandwidth, featuring a CMOS compatible MESFET on a 150 nm SOI technology is presented. It is the first board level demonstration of a SOI-MESFET based RF PA. SOI-MESFETs are an ideal candidate for integrated RF PAs due to their enhanced voltage capability and high cut-off frequency. The MESFET used in this design had a peak f T of 22 GHz and a soft-breakdown of 5V; however, different MESFETs on the same process have achieved a breakdown voltage up to 12V and peak f T up to 40 GHz. Comparatively, the standard CMOS transistors on this process have a maximum steady-state voltage of 1.95V. A peak PAE of 48% has been measured while delivering 17dBm of power to a 50 load. Also, a calibrated TOM3 model has been developed for simulation purposes.

Original languageEnglish (US)
Title of host publicationRWW 2012 - Proceedings: 2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2012
Pages21-24
Number of pages4
DOIs
StatePublished - 2012
Event2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2012 - Santa Clara, CA, United States
Duration: Jan 15 2012Jan 18 2012

Other

Other2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2012
CountryUnited States
CitySanta Clara, CA
Period1/15/121/18/12

Fingerprint

MESFET devices
Power amplifiers
Cutoff frequency
Electric potential
Electric breakdown
Transistors
Demonstrations
Bandwidth

Keywords

  • MESFETs
  • Power Amplifiers (PA)
  • silicon-on-insulator (SOI)

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

Cite this

Ghajar, M. R., Wilk, S. J., Lepkowski, W., Bakkaloglu, B., & Thornton, T. (2012). Wideband class AB RF power amplifier using CMOS compatible SOI-MESFET device on 150nm technology. In RWW 2012 - Proceedings: 2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2012 (pp. 21-24). [6174946] https://doi.org/10.1109/PAWR.2012.6174946

Wideband class AB RF power amplifier using CMOS compatible SOI-MESFET device on 150nm technology. / Ghajar, M. Reza; Wilk, Seth J.; Lepkowski, William; Bakkaloglu, Bertan; Thornton, Trevor.

RWW 2012 - Proceedings: 2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2012. 2012. p. 21-24 6174946.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ghajar, MR, Wilk, SJ, Lepkowski, W, Bakkaloglu, B & Thornton, T 2012, Wideband class AB RF power amplifier using CMOS compatible SOI-MESFET device on 150nm technology. in RWW 2012 - Proceedings: 2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2012., 6174946, pp. 21-24, 2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2012, Santa Clara, CA, United States, 1/15/12. https://doi.org/10.1109/PAWR.2012.6174946
Ghajar MR, Wilk SJ, Lepkowski W, Bakkaloglu B, Thornton T. Wideband class AB RF power amplifier using CMOS compatible SOI-MESFET device on 150nm technology. In RWW 2012 - Proceedings: 2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2012. 2012. p. 21-24. 6174946 https://doi.org/10.1109/PAWR.2012.6174946
Ghajar, M. Reza ; Wilk, Seth J. ; Lepkowski, William ; Bakkaloglu, Bertan ; Thornton, Trevor. / Wideband class AB RF power amplifier using CMOS compatible SOI-MESFET device on 150nm technology. RWW 2012 - Proceedings: 2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2012. 2012. pp. 21-24
@inproceedings{f3a91b71889f4e73aa4d4d0a65decf89,
title = "Wideband class AB RF power amplifier using CMOS compatible SOI-MESFET device on 150nm technology",
abstract = "In this paper, a wideband class AB power amplifier (PA) centered around 400MHz with 200MHz bandwidth, featuring a CMOS compatible MESFET on a 150 nm SOI technology is presented. It is the first board level demonstration of a SOI-MESFET based RF PA. SOI-MESFETs are an ideal candidate for integrated RF PAs due to their enhanced voltage capability and high cut-off frequency. The MESFET used in this design had a peak f T of 22 GHz and a soft-breakdown of 5V; however, different MESFETs on the same process have achieved a breakdown voltage up to 12V and peak f T up to 40 GHz. Comparatively, the standard CMOS transistors on this process have a maximum steady-state voltage of 1.95V. A peak PAE of 48{\%} has been measured while delivering 17dBm of power to a 50 load. Also, a calibrated TOM3 model has been developed for simulation purposes.",
keywords = "MESFETs, Power Amplifiers (PA), silicon-on-insulator (SOI)",
author = "Ghajar, {M. Reza} and Wilk, {Seth J.} and William Lepkowski and Bertan Bakkaloglu and Trevor Thornton",
year = "2012",
doi = "10.1109/PAWR.2012.6174946",
language = "English (US)",
isbn = "9781457711541",
pages = "21--24",
booktitle = "RWW 2012 - Proceedings: 2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2012",

}

TY - GEN

T1 - Wideband class AB RF power amplifier using CMOS compatible SOI-MESFET device on 150nm technology

AU - Ghajar, M. Reza

AU - Wilk, Seth J.

AU - Lepkowski, William

AU - Bakkaloglu, Bertan

AU - Thornton, Trevor

PY - 2012

Y1 - 2012

N2 - In this paper, a wideband class AB power amplifier (PA) centered around 400MHz with 200MHz bandwidth, featuring a CMOS compatible MESFET on a 150 nm SOI technology is presented. It is the first board level demonstration of a SOI-MESFET based RF PA. SOI-MESFETs are an ideal candidate for integrated RF PAs due to their enhanced voltage capability and high cut-off frequency. The MESFET used in this design had a peak f T of 22 GHz and a soft-breakdown of 5V; however, different MESFETs on the same process have achieved a breakdown voltage up to 12V and peak f T up to 40 GHz. Comparatively, the standard CMOS transistors on this process have a maximum steady-state voltage of 1.95V. A peak PAE of 48% has been measured while delivering 17dBm of power to a 50 load. Also, a calibrated TOM3 model has been developed for simulation purposes.

AB - In this paper, a wideband class AB power amplifier (PA) centered around 400MHz with 200MHz bandwidth, featuring a CMOS compatible MESFET on a 150 nm SOI technology is presented. It is the first board level demonstration of a SOI-MESFET based RF PA. SOI-MESFETs are an ideal candidate for integrated RF PAs due to their enhanced voltage capability and high cut-off frequency. The MESFET used in this design had a peak f T of 22 GHz and a soft-breakdown of 5V; however, different MESFETs on the same process have achieved a breakdown voltage up to 12V and peak f T up to 40 GHz. Comparatively, the standard CMOS transistors on this process have a maximum steady-state voltage of 1.95V. A peak PAE of 48% has been measured while delivering 17dBm of power to a 50 load. Also, a calibrated TOM3 model has been developed for simulation purposes.

KW - MESFETs

KW - Power Amplifiers (PA)

KW - silicon-on-insulator (SOI)

UR - http://www.scopus.com/inward/record.url?scp=84860808854&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84860808854&partnerID=8YFLogxK

U2 - 10.1109/PAWR.2012.6174946

DO - 10.1109/PAWR.2012.6174946

M3 - Conference contribution

AN - SCOPUS:84860808854

SN - 9781457711541

SP - 21

EP - 24

BT - RWW 2012 - Proceedings: 2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2012

ER -