TY - GEN
T1 - What Limits Mobility in Hydrogenated Indium Oxide?
AU - Husein, Sebastian
AU - Stuckelberger, Michael
AU - West, Bradley
AU - Ding, Laura
AU - Morales-Masis, Monica
AU - Dauzou, Fabien
AU - Duchamp, Martial
AU - Holman, Zachary
AU - Bertoni, Mariana
N1 - Funding Information:
S. Husein is supported in part by the Engineering Research Center Program of the National Science Foundation and the Office of Energy Efficiency and Renewable Energy of the Department of Energy under NSF Cooperative Agreement No. EEC-1041895. S. Husein would like to thank A. Ravi, A. Anwar, the Goldwater Material Science Facility, and E. Soignard for technical assistance.
Publisher Copyright:
© 2018 IEEE.
PY - 2018/11/26
Y1 - 2018/11/26
N2 - Understanding the electron scattering mechanisms dominating transport in high and low mobility transparent conducting oxides can provide insight into improving the properties of this crucial photovoltaic device layer. Contributions from ionized impurity scattering, phonon scattering, and grain boundary scattering were measured and quantified in hydrogenated indium oxide thin films, which had varying composition and grain size, resulting in a wide range of carrier densities (∼ 101Scm-3-∼ 1020cm-3) and carrier mobilities (∼ 10 cm2/Vs - > 100 cm2Vs). We used temperature-dependent Hall measurements from 5-300 Kelvin to characterize electrical properties of the sputtered films. Grain boundary scattering dominated films with the lowest mobility, whereas films with > 100 cm2/Vs mobilities were dominated by contributions from ionized impurity scattering and polar optical phonon scattering.
AB - Understanding the electron scattering mechanisms dominating transport in high and low mobility transparent conducting oxides can provide insight into improving the properties of this crucial photovoltaic device layer. Contributions from ionized impurity scattering, phonon scattering, and grain boundary scattering were measured and quantified in hydrogenated indium oxide thin films, which had varying composition and grain size, resulting in a wide range of carrier densities (∼ 101Scm-3-∼ 1020cm-3) and carrier mobilities (∼ 10 cm2/Vs - > 100 cm2Vs). We used temperature-dependent Hall measurements from 5-300 Kelvin to characterize electrical properties of the sputtered films. Grain boundary scattering dominated films with the lowest mobility, whereas films with > 100 cm2/Vs mobilities were dominated by contributions from ionized impurity scattering and polar optical phonon scattering.
KW - carrier transport
KW - temperature-dependent Hall
KW - thin film
KW - transparent conducting oxide
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U2 - 10.1109/PVSC.2018.8547394
DO - 10.1109/PVSC.2018.8547394
M3 - Conference contribution
AN - SCOPUS:85059900794
T3 - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
SP - 1810
EP - 1813
BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Y2 - 10 June 2018 through 15 June 2018
ER -