What controls deposition rate in electron-beam chemical vapor deposition?

William B. White, Konrad Rykaczewski, Andrei G. Fedorov

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

The key physical processes governing electron-beam-assisted chemical vapor deposition are analyzed via a combination of theoretical modeling and supporting experiments. The scaling laws that define growth of the nanoscale deposits are developed and verified using carefully designed experiments of carbon deposition from methane onto a silicon substrate. The results suggest that the chamber-scale continuous transport of the precursor gas is the rate controlling process in electron-beam chemical vapor deposition.

Original languageEnglish (US)
Article number086101
JournalPhysical Review Letters
Volume97
Issue number8
DOIs
StatePublished - Aug 29 2006
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'What controls deposition rate in electron-beam chemical vapor deposition?'. Together they form a unique fingerprint.

  • Cite this