What controls deposition rate in electron-beam chemical vapor deposition?

William B. White, Konrad Rykaczewski, Andrei G. Fedorov

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The key physical processes governing electron-beam-assisted chemical vapor deposition are analyzed via a combination of theoretical modeling and supporting experiments. The scaling laws that define growth of the nanoscale deposits are developed and verified using carefully designed experiments of carbon deposition from methane onto a silicon substrate. The results suggest that the chamber-scale continuous transport of the precursor gas is the rate controlling process in electron-beam chemical vapor deposition.

Original languageEnglish (US)
Article number086101
JournalPhysical Review Letters
Volume97
Issue number8
DOIs
StatePublished - 2006
Externally publishedYes

Fingerprint

vapor deposition
electron beams
scaling laws
methane
chambers
deposits
carbon
silicon
gases

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

What controls deposition rate in electron-beam chemical vapor deposition? / White, William B.; Rykaczewski, Konrad; Fedorov, Andrei G.

In: Physical Review Letters, Vol. 97, No. 8, 086101, 2006.

Research output: Contribution to journalArticle

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