Wet oxidation of Si 1-x-yGe xC y layers on (100) Si

A. E. Bair, Z. Atzmon, Terry Alford, D. Chandrasekhar, David Smith

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Single crystal Si 0.63Ge 0.36C 0.01 and amorphous Si 0.65Ge 0.27C 0.08 layers have been oxidized in a wet ambient at 700°C and 900°C. The oxide growth has been studied using Rutherford backscattering spectrometry and transmission electron microscopy. A reference sample of Si 0.63Ge 0.37 was also oxidized in order to determine the influence of C on the oxidation behavior. The lower C content alloy behaved similar to the SiGe alloy. Uniform Si 1-xGe xO 2 was obtained at 700°C whereas SiO 2 was formed at 900°C, and Ge piled up underneath the oxide. In both cases, C was not detected in the oxide layer. The amorphous Si 0.65Ge 0.27C 0.08 alloy behaved significantly different at both oxidation temperatures in comparison with the crystalline Si 0.63Ge 0.36C 0.01 and Si 0.63Ge 0.37. Negligible oxidation occurred at 700°C whereas SiO 2 was obtained at 900°C and the rejected Ge distributed uniformly throughout the SiGeC alloy. It is proposed that fast Ge diffusion during oxidation at 900°C resulted from diffusion at grain boundaries, since crystallization of the amorphous SiGeC layer occurred in conjunction with oxidation, leading to nucleation of approx. 5 nm nanocrystals.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Number of pages6
StatePublished - 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 27 1995Dec 1 1995


OtherProceedings of the 1995 MRS Fall Meeting
CityBoston, MA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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