Wet chemical method to etch sophisticated nanostructures into silicon wafers using sub-25nm feature sizes and high aspect ratios

Owen Hildreth, Yonghao Xiu, C. P. Wong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

There are a number of emerging technologies such as metamaterials, photonic wave-guides, nano-imprint lithography (NIL), field emission devices and through silicon via (TSV), that require high resolution and high aspect ratio nanofabrication techniques for good performance. Unfortunately, current nanofabrication techniques, including photolithography and e-beam lithography, are limited to low aspect ratios on the order of 7:1 and cannot fabricate the high aspect ratio nanostructures needed for these emerging nanotechnologies. Deep reactive ion etching has traditionally been used to increase the aspect ratio nanostructures produced from traditional lithography techniques; however, the process is expensive, time consuming and cannot produce smooth sidewalls, lowering device performance. To overcome these obstacles our group has developed a new wet chemical nanofabrication technique that uses shaped catalysts to etch high aspect ratio nanostructures into silicon. The process is fast, does not require expensive equipment and has been used to produce features less than 25 nm wide, 25 μms long and microns deep in silicon using nanorod catalysts. 10 nm wide features were also fabricated using nano-donuts. This new, patented technique is compatible with existing silicon fabrication technologies and could be used for a wide variety of applications that require nanometer sized features and high aspect ratios.

Original languageEnglish (US)
Title of host publication2009 Proceedings 59th Electronic Components and Technology Conference, ECTC 2009
Pages860-864
Number of pages5
DOIs
StatePublished - Oct 12 2009
Event2009 59th Electronic Components and Technology Conference, ECTC 2009 - San Diego, CA, United States
Duration: May 26 2009May 29 2009

Publication series

NameProceedings - Electronic Components and Technology Conference
ISSN (Print)0569-5503

Other

Other2009 59th Electronic Components and Technology Conference, ECTC 2009
CountryUnited States
CitySan Diego, CA
Period5/26/095/29/09

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Hildreth, O., Xiu, Y., & Wong, C. P. (2009). Wet chemical method to etch sophisticated nanostructures into silicon wafers using sub-25nm feature sizes and high aspect ratios. In 2009 Proceedings 59th Electronic Components and Technology Conference, ECTC 2009 (pp. 860-864). [5074113] (Proceedings - Electronic Components and Technology Conference). https://doi.org/10.1109/ECTC.2009.5074113