Abstract
We present an approach of uniformly changing the barrier height of AlGaAs in GaAs/AlGaAs based Terahertz (THz) quantum cascade laser structures for tuning the emission wavelengths. By uniformly changing the aluminum content of all the barriers from 15.5% to 13.5% in a set of 5 MBE-grown samples emission wavelengths from ∼70 to 67.5 μm, in nearly equal steps, are realized.
Original language | English (US) |
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Pages (from-to) | 477-479 |
Number of pages | 3 |
Journal | Journal of Crystal Growth |
Volume | 323 |
Issue number | 1 |
DOIs | |
State | Published - May 15 2011 |
Keywords
- Heterojunction semiconductor devices
- Laser diodes
- Molecular beam epitaxy
- Quantum wells
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry