Wavelength tuning of GaAs/AlGaAs terahertz quantum cascade lasers by controlling aluminum content in barriers

N. Samal; Y. G. Sadofyev; S. Annamalai; L. Chen; A. Samal; Shane Johnson

doi:10.1016/j.jcrysgro.2010.10.134

Wavelength tuning of GaAs/AlGaAs terahertz quantum cascade lasers by controlling aluminum content in barriers

N. Samal, Y. G. Sadofyev, S. Annamalai, L. Chen, A. Samal, Shane Johnson

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We present an approach of uniformly changing the barrier height of AlGaAs in GaAs/AlGaAs based Terahertz (THz) quantum cascade laser structures for tuning the emission wavelengths. By uniformly changing the aluminum content of all the barriers from 15.5% to 13.5% in a set of 5 MBE-grown samples emission wavelengths from ∼70 to 67.5 μm, in nearly equal steps, are realized.

Original language	English (US)
Pages (from-to)	477-479
Number of pages	3
Journal	Journal of Crystal Growth
Volume	323
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2010.10.134
State	Published - May 15 2011

Keywords

Heterojunction semiconductor devices
Laser diodes
Molecular beam epitaxy
Quantum wells

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2010.10.134

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title = "Wavelength tuning of GaAs/AlGaAs terahertz quantum cascade lasers by controlling aluminum content in barriers",

abstract = "We present an approach of uniformly changing the barrier height of AlGaAs in GaAs/AlGaAs based Terahertz (THz) quantum cascade laser structures for tuning the emission wavelengths. By uniformly changing the aluminum content of all the barriers from 15.5% to 13.5% in a set of 5 MBE-grown samples emission wavelengths from ∼70 to 67.5 μm, in nearly equal steps, are realized.",

keywords = "Heterojunction semiconductor devices, Laser diodes, Molecular beam epitaxy, Quantum wells",

author = "N. Samal and Sadofyev, {Y. G.} and S. Annamalai and L. Chen and A. Samal and Shane Johnson",

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AU - Samal, N.

AU - Sadofyev, Y. G.

AU - Annamalai, S.

AU - Chen, L.

AU - Samal, A.

AU - Johnson, Shane

PY - 2011/5/15

Y1 - 2011/5/15

N2 - We present an approach of uniformly changing the barrier height of AlGaAs in GaAs/AlGaAs based Terahertz (THz) quantum cascade laser structures for tuning the emission wavelengths. By uniformly changing the aluminum content of all the barriers from 15.5% to 13.5% in a set of 5 MBE-grown samples emission wavelengths from ∼70 to 67.5 μm, in nearly equal steps, are realized.

AB - We present an approach of uniformly changing the barrier height of AlGaAs in GaAs/AlGaAs based Terahertz (THz) quantum cascade laser structures for tuning the emission wavelengths. By uniformly changing the aluminum content of all the barriers from 15.5% to 13.5% in a set of 5 MBE-grown samples emission wavelengths from ∼70 to 67.5 μm, in nearly equal steps, are realized.

KW - Heterojunction semiconductor devices

KW - Laser diodes

KW - Molecular beam epitaxy

KW - Quantum wells

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EP - 479

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1

ER -

Wavelength tuning of GaAs/AlGaAs terahertz quantum cascade lasers by controlling aluminum content in barriers

Abstract

Keywords

ASJC Scopus subject areas

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