Wavelength tuning of GaAs/AlGaAs terahertz quantum cascade lasers by controlling aluminum content in barriers

N. Samal, Y. G. Sadofyev, S. Annamalai, L. Chen, A. Samal, Shane Johnson

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We present an approach of uniformly changing the barrier height of AlGaAs in GaAs/AlGaAs based Terahertz (THz) quantum cascade laser structures for tuning the emission wavelengths. By uniformly changing the aluminum content of all the barriers from 15.5% to 13.5% in a set of 5 MBE-grown samples emission wavelengths from ∼70 to 67.5 μm, in nearly equal steps, are realized.

Original languageEnglish (US)
Pages (from-to)477-479
Number of pages3
JournalJournal of Crystal Growth
Volume323
Issue number1
DOIs
StatePublished - May 15 2011

Fingerprint

Quantum cascade lasers
quantum cascade lasers
Aluminum
aluminum gallium arsenides
Tuning
tuning
aluminum
Wavelength
Molecular beam epitaxy
wavelengths
gallium arsenide

Keywords

  • Heterojunction semiconductor devices
  • Laser diodes
  • Molecular beam epitaxy
  • Quantum wells

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Wavelength tuning of GaAs/AlGaAs terahertz quantum cascade lasers by controlling aluminum content in barriers. / Samal, N.; Sadofyev, Y. G.; Annamalai, S.; Chen, L.; Samal, A.; Johnson, Shane.

In: Journal of Crystal Growth, Vol. 323, No. 1, 15.05.2011, p. 477-479.

Research output: Contribution to journalArticle

Samal, N. ; Sadofyev, Y. G. ; Annamalai, S. ; Chen, L. ; Samal, A. ; Johnson, Shane. / Wavelength tuning of GaAs/AlGaAs terahertz quantum cascade lasers by controlling aluminum content in barriers. In: Journal of Crystal Growth. 2011 ; Vol. 323, No. 1. pp. 477-479.
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AU - Samal, A.

AU - Johnson, Shane

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