Abstract
We present an approach of uniformly changing the barrier height of AlGaAs in GaAs/AlGaAs based Terahertz (THz) quantum cascade laser structures for tuning the emission wavelengths. By uniformly changing the aluminum content of all the barriers from 15.5% to 13.5% in a set of 5 MBE-grown samples emission wavelengths from ∼70 to 67.5 μm, in nearly equal steps, are realized.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 477-479 |
| Number of pages | 3 |
| Journal | Journal of Crystal Growth |
| Volume | 323 |
| Issue number | 1 |
| DOIs | |
| State | Published - May 15 2011 |
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Keywords
- Heterojunction semiconductor devices
- Laser diodes
- Molecular beam epitaxy
- Quantum wells
ASJC Scopus subject areas
- Condensed Matter Physics
- Materials Chemistry
- Inorganic Chemistry
Cite this
Wavelength tuning of GaAs/AlGaAs terahertz quantum cascade lasers by controlling aluminum content in barriers. / Samal, N.; Sadofyev, Y. G.; Annamalai, S.; Chen, L.; Samal, A.; Johnson, Shane.
In: Journal of Crystal Growth, Vol. 323, No. 1, 15.05.2011, p. 477-479.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Wavelength tuning of GaAs/AlGaAs terahertz quantum cascade lasers by controlling aluminum content in barriers
AU - Samal, N.
AU - Sadofyev, Y. G.
AU - Annamalai, S.
AU - Chen, L.
AU - Samal, A.
AU - Johnson, Shane
PY - 2011/5/15
Y1 - 2011/5/15
N2 - We present an approach of uniformly changing the barrier height of AlGaAs in GaAs/AlGaAs based Terahertz (THz) quantum cascade laser structures for tuning the emission wavelengths. By uniformly changing the aluminum content of all the barriers from 15.5% to 13.5% in a set of 5 MBE-grown samples emission wavelengths from ∼70 to 67.5 μm, in nearly equal steps, are realized.
AB - We present an approach of uniformly changing the barrier height of AlGaAs in GaAs/AlGaAs based Terahertz (THz) quantum cascade laser structures for tuning the emission wavelengths. By uniformly changing the aluminum content of all the barriers from 15.5% to 13.5% in a set of 5 MBE-grown samples emission wavelengths from ∼70 to 67.5 μm, in nearly equal steps, are realized.
KW - Heterojunction semiconductor devices
KW - Laser diodes
KW - Molecular beam epitaxy
KW - Quantum wells
UR - http://www.scopus.com/inward/record.url?scp=79957980495&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79957980495&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2010.10.134
DO - 10.1016/j.jcrysgro.2010.10.134
M3 - Article
AN - SCOPUS:79957980495
VL - 323
SP - 477
EP - 479
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1
ER -