Abstract
The low temperature magneto-resistance of quasi-ballistic, corrugated quantum wires has been studied. In the region near zero magnetic field, the magneto-resistance exhibits a series of clear oscillations which simulations reveal to be associated with multiple backscattering of electrons from the intentionally induced gate corrugation. This backscattering, in turn, gives rise to a strong scarring of the probability density in the wire, the details of which are easily related to classical scattering trajectories within it.
Original language | English (US) |
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Pages (from-to) | 1125-1130 |
Number of pages | 6 |
Journal | Solid-State Electronics |
Volume | 42 |
Issue number | 7-8 |
DOIs | |
State | Published - 1998 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry