Warpage and Oxide Precipitate Distributions in CZ Silicon Wafers

H. D. Chiou, Ray Carpenter, R. W. Carpenter, J. Jeong

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

Several types of as-received and complementary metal oxide semiconductor (CMOS) thermal simulated 100 mm wafers were used for warpage study under different annealing conditions. The results indicated that as-received wafers showed little increase in warpage up to 1000°C furnace temperature and 61.0 cm/min insertion rate. For the CMOS thermal simulation processed wafers, both the prior amount of oxygen precipitation, Δ[Oi], where Δ[Oi] is the decrease in interstitial oxygen concentration, and bulk microdefect morphology affected warpage. For Δ[Oi] less than ca. 26 ppma, wafers with predominantly octahedral precipitates without associated dislocations plus a low density of small plate-type and dot-like precipitates underwent much less warpage than wafers with predominantly large octahedral precipitates and precipitate-dislocation-complexes (PDCs). When the Δ[Oi] was higher than 26 ppma, the defects consisted of a high density of large octahedral-shaped precipitates and PDCs and thus warpage became inevitable.

Original languageEnglish (US)
Pages (from-to)1856-1862
Number of pages7
JournalJournal of the Electrochemical Society
Volume141
Issue number7
DOIs
StatePublished - Jul 1994

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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