Warm electrons in degenerate quasi-two-dimensional semiconductors

D. K. Ferry

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The energy-diffusion equation for carrier flow in energy space is extended to the case of degenerate semiconductors and applied to warm electrons at low temperatures in quasi-two-dimensional semiconductors. A continuity equation for energy flow is also utilized to include the effects of large energy exchange collisions. The electron temperature is found to vary as T0(1 +βF2), where the value of β falls generally in the range 10-6-10-4 cm2 V2 for a silicon inversion layer and the value of β depends upon the relevant scattering mechanisms and surface mobility. The role of the large energy exchange collisions is primarily to skew the warm-electron distribution to the high energy tail.

Original languageEnglish (US)
Pages (from-to)136-146
Number of pages11
JournalSurface Science
Volume73
Issue numberC
DOIs
StatePublished - May 1 1978
Externally publishedYes

Fingerprint

Semiconductor materials
Inversion layers
Electrons
Electron temperature
Silicon
electrons
energy transfer
Scattering
collisions
energy
continuity equation
electron distribution
electron energy
inversions
Temperature
silicon
scattering

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Warm electrons in degenerate quasi-two-dimensional semiconductors. / Ferry, D. K.

In: Surface Science, Vol. 73, No. C, 01.05.1978, p. 136-146.

Research output: Contribution to journalArticle

Ferry, D. K. / Warm electrons in degenerate quasi-two-dimensional semiconductors. In: Surface Science. 1978 ; Vol. 73, No. C. pp. 136-146.
@article{b152673c5d1f45d5bef9403659af6539,
title = "Warm electrons in degenerate quasi-two-dimensional semiconductors",
abstract = "The energy-diffusion equation for carrier flow in energy space is extended to the case of degenerate semiconductors and applied to warm electrons at low temperatures in quasi-two-dimensional semiconductors. A continuity equation for energy flow is also utilized to include the effects of large energy exchange collisions. The electron temperature is found to vary as T0(1 +βF2), where the value of β falls generally in the range 10-6-10-4 cm2 V2 for a silicon inversion layer and the value of β depends upon the relevant scattering mechanisms and surface mobility. The role of the large energy exchange collisions is primarily to skew the warm-electron distribution to the high energy tail.",
author = "Ferry, {D. K.}",
year = "1978",
month = "5",
day = "1",
doi = "10.1016/0039-6028(78)90481-8",
language = "English (US)",
volume = "73",
pages = "136--146",
journal = "Surface Science",
issn = "0039-6028",
publisher = "Elsevier",
number = "C",

}

TY - JOUR

T1 - Warm electrons in degenerate quasi-two-dimensional semiconductors

AU - Ferry, D. K.

PY - 1978/5/1

Y1 - 1978/5/1

N2 - The energy-diffusion equation for carrier flow in energy space is extended to the case of degenerate semiconductors and applied to warm electrons at low temperatures in quasi-two-dimensional semiconductors. A continuity equation for energy flow is also utilized to include the effects of large energy exchange collisions. The electron temperature is found to vary as T0(1 +βF2), where the value of β falls generally in the range 10-6-10-4 cm2 V2 for a silicon inversion layer and the value of β depends upon the relevant scattering mechanisms and surface mobility. The role of the large energy exchange collisions is primarily to skew the warm-electron distribution to the high energy tail.

AB - The energy-diffusion equation for carrier flow in energy space is extended to the case of degenerate semiconductors and applied to warm electrons at low temperatures in quasi-two-dimensional semiconductors. A continuity equation for energy flow is also utilized to include the effects of large energy exchange collisions. The electron temperature is found to vary as T0(1 +βF2), where the value of β falls generally in the range 10-6-10-4 cm2 V2 for a silicon inversion layer and the value of β depends upon the relevant scattering mechanisms and surface mobility. The role of the large energy exchange collisions is primarily to skew the warm-electron distribution to the high energy tail.

UR - http://www.scopus.com/inward/record.url?scp=49349120431&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=49349120431&partnerID=8YFLogxK

U2 - 10.1016/0039-6028(78)90481-8

DO - 10.1016/0039-6028(78)90481-8

M3 - Article

AN - SCOPUS:49349120431

VL - 73

SP - 136

EP - 146

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - C

ER -