Warm electrons in degenerate quasi-two-dimensional semiconductors

D. K. Ferry

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

The energy-diffusion equation for carrier flow in energy space is extended to the case of degenerate semiconductors and applied to warm electrons at low temperatures in quasi-two-dimensional semiconductors. A continuity equation for energy flow is also utilized to include the effects of large energy exchange collisions. The electron temperature is found to vary as T0(1 +βF2), where the value of β falls generally in the range 10-6-10-4 cm2 V2 for a silicon inversion layer and the value of β depends upon the relevant scattering mechanisms and surface mobility. The role of the large energy exchange collisions is primarily to skew the warm-electron distribution to the high energy tail.

Original languageEnglish (US)
Pages (from-to)136-146
Number of pages11
JournalSurface Science
Volume73
Issue numberC
DOIs
StatePublished - May 1 1978

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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