Wafer bonding of silicon carbide and gallium nitride

Jaeseob Lee, T. E. Cook, E. N. Bryan, J. D. Hartman, R. F. Davis, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Wafer bonding of SiC and GaN may prove important in the formation of high power heterojunction devices. Results of bonding SiC (C or Si surface) onto GaN (Ga surface) are presented. The samples were n-type 6H SiC and epitaxial n-type 2H(wurzite) GaN grown on SiC. The results demonstrate bonding for both possibilities, but the bonding of the C surface SiC to Ga surface GaN is more readily accomplished. A lower resistance was found for the C-face SiC/Ga-face GaN. The results indicate that the polarity of the interface is important for bonding of these materials.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Pages39-44
Number of pages6
Volume681
StatePublished - 2001
Externally publishedYes
Event2001 MRS Spring Meeting - San Franciso, CA, United States
Duration: Apr 16 2001Apr 20 2001

Other

Other2001 MRS Spring Meeting
CountryUnited States
CitySan Franciso, CA
Period4/16/014/20/01

Fingerprint

Wafer bonding
Gallium nitride
Silicon carbide
Heterojunctions
silicon carbide
gallium nitride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Lee, J., Cook, T. E., Bryan, E. N., Hartman, J. D., Davis, R. F., & Nemanich, R. (2001). Wafer bonding of silicon carbide and gallium nitride. In Materials Research Society Symposium Proceedings (Vol. 681, pp. 39-44)

Wafer bonding of silicon carbide and gallium nitride. / Lee, Jaeseob; Cook, T. E.; Bryan, E. N.; Hartman, J. D.; Davis, R. F.; Nemanich, Robert.

Materials Research Society Symposium Proceedings. Vol. 681 2001. p. 39-44.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, J, Cook, TE, Bryan, EN, Hartman, JD, Davis, RF & Nemanich, R 2001, Wafer bonding of silicon carbide and gallium nitride. in Materials Research Society Symposium Proceedings. vol. 681, pp. 39-44, 2001 MRS Spring Meeting, San Franciso, CA, United States, 4/16/01.
Lee J, Cook TE, Bryan EN, Hartman JD, Davis RF, Nemanich R. Wafer bonding of silicon carbide and gallium nitride. In Materials Research Society Symposium Proceedings. Vol. 681. 2001. p. 39-44
Lee, Jaeseob ; Cook, T. E. ; Bryan, E. N. ; Hartman, J. D. ; Davis, R. F. ; Nemanich, Robert. / Wafer bonding of silicon carbide and gallium nitride. Materials Research Society Symposium Proceedings. Vol. 681 2001. pp. 39-44
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