Wafer bonding of silicon carbide and gallium nitride

Jaeseob Lee, T. E. Cook, E. N. Bryan, J. D. Hartman, R. F. Davis, R. J. Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Wafer bonding of SiC and GaN may prove important in the formation of high power heterojunction devices. Results of bonding SiC (C or Si surface) onto GaN (Ga surface) are presented. The samples were n-type 6H SiC and epitaxial n-type 2H(wurzite) GaN grown on SiC. The results demonstrate bonding for both possibilities, but the bonding of the C surface SiC to Ga surface GaN is more readily accomplished. A lower resistance was found for the C-face SiC/Ga-face GaN. The results indicate that the polarity of the interface is important for bonding of these materials.

Original languageEnglish (US)
Title of host publicationWafer Bonding and Thinning Techniques for Materials Integration
Pages39-44
Number of pages6
StatePublished - Dec 1 2001
Externally publishedYes
Event2001 MRS Spring Meeting - San Franciso, CA, United States
Duration: Apr 16 2001Apr 20 2001

Publication series

NameMaterials Research Society Symposium Proceedings
Volume681
ISSN (Print)0272-9172

Other

Other2001 MRS Spring Meeting
CountryUnited States
CitySan Franciso, CA
Period4/16/014/20/01

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lee, J., Cook, T. E., Bryan, E. N., Hartman, J. D., Davis, R. F., & Nemanich, R. J. (2001). Wafer bonding of silicon carbide and gallium nitride. In Wafer Bonding and Thinning Techniques for Materials Integration (pp. 39-44). (Materials Research Society Symposium Proceedings; Vol. 681).