@inproceedings{eac2fed505bf42439412db6efedf29ef,
title = "W-band SiGe power amplifiers",
abstract = "This paper presents W-band cascode power amplifiers implemented in a 90 nm SiGe BiCMOS technology. The one-way cascode PA achieves a saturated output power of 18.0 dBm with 17.2% peak PAE at 93 GHz. The two-way power-combined cascode PA achieves a saturated output power of 20.8 dBm with 14.5% peak PAE at 93 GHz. The one-way PA and two-way power-combined SiGe PAs occupy an area of 0.29 mm2 and 0.57 mm2 without pads, respectively. To the authors' best knowledge, this work demonstrates the highest PAEs and associated output powers achieved by W-band PAs in any silicon-based technology to date.",
keywords = "SiGe, W-band, millimeter-wave integrated circuits, power amplifier, silicon-germanium",
author = "Peter Song and Ulusoy, {Ahmet Cagn} and Schmid, {Robert L.} and Zeinolabedinzadeh, {Saeed N.} and Cressler, {John D.}",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014 ; Conference date: 28-09-2014 Through 01-10-2014",
year = "2014",
month = dec,
day = "9",
doi = "10.1109/BCTM.2014.6981303",
language = "English (US)",
series = "Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "151--154",
booktitle = "2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014",
}