W-band SiGe power amplifiers

Peter Song, Ahmet Cagn Ulusoy, Robert L. Schmid, Saeed N. Zeinolabedinzadeh, John D. Cressler

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

Abstract

This paper presents W-band cascode power amplifiers implemented in a 90 nm SiGe BiCMOS technology. The one-way cascode PA achieves a saturated output power of 18.0 dBm with 17.2% peak PAE at 93 GHz. The two-way power-combined cascode PA achieves a saturated output power of 20.8 dBm with 14.5% peak PAE at 93 GHz. The one-way PA and two-way power-combined SiGe PAs occupy an area of 0.29 mm2 and 0.57 mm2 without pads, respectively. To the authors' best knowledge, this work demonstrates the highest PAEs and associated output powers achieved by W-band PAs in any silicon-based technology to date.

Original languageEnglish (US)
Title of host publication2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages151-154
Number of pages4
ISBN (Electronic)9781479972302
DOIs
StatePublished - Dec 9 2014
Externally publishedYes
Event2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014 - Coronado, United States
Duration: Sep 28 2014Oct 1 2014

Publication series

NameProceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
ISSN (Print)1088-9299

Conference

Conference2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014
CountryUnited States
CityCoronado
Period9/28/1410/1/14

Keywords

  • SiGe
  • W-band
  • millimeter-wave integrated circuits
  • power amplifier
  • silicon-germanium

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Song, P., Ulusoy, A. C., Schmid, R. L., Zeinolabedinzadeh, S. N., & Cressler, J. D. (2014). W-band SiGe power amplifiers. In 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014 (pp. 151-154). [6981303] (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/BCTM.2014.6981303