Voltage-Based Concatenatable Full Adder Using Spin Hall Effect Switching

Arman Roohi, Ramtin Zand, Deliang Fan, Ronald F. DeMara

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

Magnetic tunnel junction (MTJ)-based devices have been studied extensively as a promising candidate to implement hybrid energy-efficient computing circuits due to their nonvolatility, high integration density, and CMOS compatibility. In this paper, MTJs are leveraged to develop a novel full adder (FA) based on 3- and 5-input majority gates. Spin Hall effect (SHE) is utilized for changing the MTJ states resulting in low-energy switching behavior. SHE-MTJ devices are modeled in Verilog-A using precise physical equations. SPICE circuit simulator is used to validate the functionality of 1-bit SHE-based FA. The simulation results show 76% and 32% improvement over previous voltage-mode MTJ-based FA in terms of energy consumption and device count, respectively. The concatanatability of our proposed 1-bit SHE-FA is investigated through developing a 4-bit SHE-FA. Finally, delay and power consumption of an n-bit SHE-based adder has been formulated to provide a basis for developing an energy efficient SHE-based n-bit arithmetic logic unit.

Original languageEnglish (US)
Article number7837669
Pages (from-to)2134-2138
Number of pages5
JournalIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume36
Issue number12
DOIs
StatePublished - Dec 2017
Externally publishedYes

Keywords

  • Full adder (FA)
  • magnetic tunnel junction (MTJ)
  • spin-Hall effect (SHE)
  • spin-transfer torque (STT)

ASJC Scopus subject areas

  • Software
  • Computer Graphics and Computer-Aided Design
  • Electrical and Electronic Engineering

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