Virtual metrology modeling for plasma etch operations

Dekong Zeng, Costas J. Spanos, Yajing Tan, Tzu Yu Wang, Chun Hsien Lin, Henry Lo, Jean Wang, Yu Cao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The objective of this paper is to present the utilization of information produced during plasma etching for the prediction of etch bias. A plasma etching process typically relies on the concentration of chemical species in reaction chambers over time, where each concentration depends on chamber pressure, gas flow rate, power level and other chamber and wafer properties. Plasma properties, as well as equipment factors are nonlinear and vary over time. In this work, we will use various statistical techniques to address challenges due to the nature of plasma data: high dimensionality, collinearity, overall non-linearity of system, variation of data structure due to equipment condition changing, etc.

Original languageEnglish (US)
Title of host publicationIEEE International Symposium on Semiconductor Manufacturing Conference Proceedings
Pages269-272
Number of pages4
StatePublished - 2008
Externally publishedYes
Event2008 17th International Symposium on Semiconductor Manufacturing, ISSM 2008 - Tokyo, Japan
Duration: Oct 27 2008Oct 29 2008

Other

Other2008 17th International Symposium on Semiconductor Manufacturing, ISSM 2008
CountryJapan
CityTokyo
Period10/27/0810/29/08

Fingerprint

Plasma etching
Plasmas
Flow of gases
Data structures
Flow rate

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Industrial and Manufacturing Engineering

Cite this

Zeng, D., Spanos, C. J., Tan, Y., Wang, T. Y., Lin, C. H., Lo, H., ... Cao, Y. (2008). Virtual metrology modeling for plasma etch operations. In IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (pp. 269-272). [5714918]

Virtual metrology modeling for plasma etch operations. / Zeng, Dekong; Spanos, Costas J.; Tan, Yajing; Wang, Tzu Yu; Lin, Chun Hsien; Lo, Henry; Wang, Jean; Cao, Yu.

IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings. 2008. p. 269-272 5714918.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zeng, D, Spanos, CJ, Tan, Y, Wang, TY, Lin, CH, Lo, H, Wang, J & Cao, Y 2008, Virtual metrology modeling for plasma etch operations. in IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings., 5714918, pp. 269-272, 2008 17th International Symposium on Semiconductor Manufacturing, ISSM 2008, Tokyo, Japan, 10/27/08.
Zeng D, Spanos CJ, Tan Y, Wang TY, Lin CH, Lo H et al. Virtual metrology modeling for plasma etch operations. In IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings. 2008. p. 269-272. 5714918
Zeng, Dekong ; Spanos, Costas J. ; Tan, Yajing ; Wang, Tzu Yu ; Lin, Chun Hsien ; Lo, Henry ; Wang, Jean ; Cao, Yu. / Virtual metrology modeling for plasma etch operations. IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings. 2008. pp. 269-272
@inproceedings{a8d3ad927efb481f8e24d2a967b74307,
title = "Virtual metrology modeling for plasma etch operations",
abstract = "The objective of this paper is to present the utilization of information produced during plasma etching for the prediction of etch bias. A plasma etching process typically relies on the concentration of chemical species in reaction chambers over time, where each concentration depends on chamber pressure, gas flow rate, power level and other chamber and wafer properties. Plasma properties, as well as equipment factors are nonlinear and vary over time. In this work, we will use various statistical techniques to address challenges due to the nature of plasma data: high dimensionality, collinearity, overall non-linearity of system, variation of data structure due to equipment condition changing, etc.",
author = "Dekong Zeng and Spanos, {Costas J.} and Yajing Tan and Wang, {Tzu Yu} and Lin, {Chun Hsien} and Henry Lo and Jean Wang and Yu Cao",
year = "2008",
language = "English (US)",
isbn = "9784990413828",
pages = "269--272",
booktitle = "IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings",

}

TY - GEN

T1 - Virtual metrology modeling for plasma etch operations

AU - Zeng, Dekong

AU - Spanos, Costas J.

AU - Tan, Yajing

AU - Wang, Tzu Yu

AU - Lin, Chun Hsien

AU - Lo, Henry

AU - Wang, Jean

AU - Cao, Yu

PY - 2008

Y1 - 2008

N2 - The objective of this paper is to present the utilization of information produced during plasma etching for the prediction of etch bias. A plasma etching process typically relies on the concentration of chemical species in reaction chambers over time, where each concentration depends on chamber pressure, gas flow rate, power level and other chamber and wafer properties. Plasma properties, as well as equipment factors are nonlinear and vary over time. In this work, we will use various statistical techniques to address challenges due to the nature of plasma data: high dimensionality, collinearity, overall non-linearity of system, variation of data structure due to equipment condition changing, etc.

AB - The objective of this paper is to present the utilization of information produced during plasma etching for the prediction of etch bias. A plasma etching process typically relies on the concentration of chemical species in reaction chambers over time, where each concentration depends on chamber pressure, gas flow rate, power level and other chamber and wafer properties. Plasma properties, as well as equipment factors are nonlinear and vary over time. In this work, we will use various statistical techniques to address challenges due to the nature of plasma data: high dimensionality, collinearity, overall non-linearity of system, variation of data structure due to equipment condition changing, etc.

UR - http://www.scopus.com/inward/record.url?scp=79952551444&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79952551444&partnerID=8YFLogxK

M3 - Conference contribution

SN - 9784990413828

SP - 269

EP - 272

BT - IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings

ER -