Vertical GaN Power Devices: Device Principles and Fabrication Technologies - Part i

Houqiang Fu, Kai Fu, Srabanti Chowdhury, Tomas Palacios, Yuji Zhao

Research output: Contribution to journalArticlepeer-review

Abstract

Recent years have witnessed a tremendous development of vertical gallium nitride (GaN) power devices, a new class of device technology that could be the key enabler for next-generation high performance power electronics. In this comprehensive review, we discuss the recent progress made on vertical GaN power devices, highlighting their important device design principles and fabrication processes. Part I of the two-part review series introduces the basic design principles of vertical GaN devices using Schottky barrier diodes (SBDs) and p-n diodes as examples. We provide a comprehensive review and in-depth analysis on their basic structures, fabrication processes, and device physics. Materials engineering, including buffer layer and drift layer design, and device engineering, including various edge termination methods, are elucidated. Key device topics, including avalanche breakdown and leakage mechanisms of vertical GaN power devices, are also discussed. We also examine various approaches and provide detailed descriptions of the key knowledge obtained. This timely review provides valuable information for the power electronics community and can inspire researchers for future interdisciplinary collaborations in this emerging and exciting research field.

Original languageEnglish (US)
Article number9445399
Pages (from-to)3200-3211
Number of pages12
JournalIEEE Transactions on Electron Devices
Volume68
Issue number7
DOIs
StatePublished - Jul 2021
Externally publishedYes

Keywords

  • Gallium nitride (GaN)
  • Schottky barrier diodes (SBDs)
  • p-n diodes
  • power electronics
  • power transistors
  • wide bandgap semiconductors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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