Vertical GaN Power Devices: Device Principles and Fabrication Technologies - Part II

Houqiang Fu, Kai Fu, Srabanti Chowdhury, Tomas Palacios, Yuji Zhao

Research output: Contribution to journalArticlepeer-review

Abstract

Vertical gallium nitride (GaN) power devices are enabling next-generation power electronic devices and systems with higher energy efficiency, higher power density, faster switching, and smaller form factor. In Part I of this review, we have reviewed the basic design principles and physics of building blocks of vertical GaN power devices, i.e., Schottky barrier diodes and p-n diodes. Key topics such as materials engineering, device engineering, avalanche breakdown, and leakage mechanisms are discussed. In Part II of this review, several more advanced power rectifiers are discussed, including junction barrier Schottky (JBS) rectifiers, merged p-n/Schottky (MPS) rectifiers, and trench metal-insulator-semiconductor barrier Schottky (TMBS) rectifiers. Normally- OFF GaN power transistors have been realized in various advanced device structures, including current aperture vertical electron transistors (CAVETs), junction field-effect transistors (JFETs), metal-oxide-semiconductor field-effect transistors (MOSFETs), and fin field-effect transistors (FinFETs). A detailed analysis on their performance metrics is provided, with special emphasis on the impacts of key fabrication processes such as etching, ion implantation, and surface treatment. Lastly, exciting progress has been made on selective area doping and regrowth, a critical process for the fabrication of vertical GaN power devices. Various materials characterization techniques and surface treatments have proven to be beneficial in aiding this rapid development. This timely and comprehensive review summarizes the current progress, understanding, and challenges in vertical GaN power devices, which can serve as not only a gateway for those interested in the field but also a critical reference for researchers in the wide bandgap semiconductor and power electronics community.

Original languageEnglish (US)
Article number9445394
Pages (from-to)3212-3222
Number of pages11
JournalIEEE Transactions on Electron Devices
Volume68
Issue number7
DOIs
StatePublished - Jul 2021
Externally publishedYes

Keywords

  • Gallium nitride (GaN)
  • junction barrier Schottky (JBS)
  • power electronics
  • power transistors
  • selective area doping
  • wide bandgap (WBG) semiconductors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Vertical GaN Power Devices: Device Principles and Fabrication Technologies - Part II'. Together they form a unique fingerprint.

Cite this