Versatile buffer layer architectures based on Ge 1- x Sn x alloys

R. Roucka, J. Tolle, C. Cook, Andrew Chizmeshya, John Kouvetakis, V. D'Costa, Jose Menendez, Zhihao D. Chen, S. Zollner

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Abstract

We describe methodologies for integration of compound semiconductors with Si via buffer layers and templates based on the GeSn system. These layers exhibit atomically flat surface morphologies, low defect densities, tunable thermal expansion coefficients, and unique ductile properties, which enable them to readily absorb differential stresses produced by mismatched overlayers. They also provide a continuous selection of lattice parameters higher than that of Ge, which allows lattice matching with technologically useful III-V compounds. Using this approach we have demonstrated growth of GaAs, GeSiSn, and pure Ge layers at low temperatures on Si(100). These materials display extremely high-quality structural, morphological, and optical properties opening the possibility of versatile integration schemes directly on silicon.

Original languageEnglish (US)
Article number191912
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number19
DOIs
StatePublished - May 9 2005

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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