Velocity Overshoot in Ultra-Short-Gate-Length GaAs MESFET’s

Gary Bernstein; David K. Ferry

doi:10.1109/16.3340

Velocity Overshoot in Ultra-Short-Gate-Length GaAs MESFET’s

Gary Bernstein, David K. Ferry

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

GaAs MESFET’s with ultra-short gates between 0.035 and 0.065 μm were fabricated in order to determine trends in their dc transconductance as a function of gate length. It is found that overshoot in the channel causes a considerable increase in the average electron velocity. In addition, it is found that an approximation based upon the gradual channel approximation becomes valid at ultra-short gate lengths due to an increased percentage of the channel that is velocity saturated.

Original language	English (US)
Pages (from-to)	887-892
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	35
Issue number	7
DOIs	https://doi.org/10.1109/16.3340
State	Published - Jul 1988

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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abstract = "GaAs MESFET{\textquoteright}s with ultra-short gates between 0.035 and 0.065 μm were fabricated in order to determine trends in their dc transconductance as a function of gate length. It is found that overshoot in the channel causes a considerable increase in the average electron velocity. In addition, it is found that an approximation based upon the gradual channel approximation becomes valid at ultra-short gate lengths due to an increased percentage of the channel that is velocity saturated.",

author = "Gary Bernstein and Ferry, {David K.}",

note = "Funding Information: This work was supported by the Ofice of Naval Research. The authors are with the Center for Solid State Electronics Research, Arizona State University, Tempe, A 2 85287. IEEE Log Number 8820827.",

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AU - Bernstein, Gary

AU - Ferry, David K.

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PY - 1988/7

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N2 - GaAs MESFET’s with ultra-short gates between 0.035 and 0.065 μm were fabricated in order to determine trends in their dc transconductance as a function of gate length. It is found that overshoot in the channel causes a considerable increase in the average electron velocity. In addition, it is found that an approximation based upon the gradual channel approximation becomes valid at ultra-short gate lengths due to an increased percentage of the channel that is velocity saturated.

AB - GaAs MESFET’s with ultra-short gates between 0.035 and 0.065 μm were fabricated in order to determine trends in their dc transconductance as a function of gate length. It is found that overshoot in the channel causes a considerable increase in the average electron velocity. In addition, it is found that an approximation based upon the gradual channel approximation becomes valid at ultra-short gate lengths due to an increased percentage of the channel that is velocity saturated.

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Velocity Overshoot in Ultra-Short-Gate-Length GaAs MESFET’s

Abstract

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