Velocity overshoot in a modulation doped Si/Si1-xGex structure

Toshishige Yamada, H. Miyata, Jing Rong Zhou, D. K. Ferry

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The in-plane transport properties of a strained (100) Si layer on a relaxed Si1-xGex substrate are studied for an ungated modulation-doped structure. We use an ensemble Monte Carlo technique. These results are then used to study a gated device structure with a moment equation method. Similar velocity-field characteristics are found for ungated strained Si with any valley splitting energy ΔE≥0.1 eV. These phonon-limited electron mobilities reach 4000 cm2V-1 at 300 K, and 23000 cm2V-1 s-1 at 77 K. There is only a slight increase in the saturation velocity is found to depend upon ΔE, and for ΔE=0.4 eV it reaches 4.1×107 cm s-1 at 300 K, and 5.2×107 cm s-1 at 77 K. Impact ionization increases with ΔE due to the reduction in the bandgap. For the gated device structure our numerical simulation of a deep submicrometre modulation-doped device shows velocity overshoot with a peak velocity of 2.6×107 cm s-1 in the quantum well at 300 K which is important in achieving a high transconductance of about 300 mS mm-1.

Original languageEnglish (US)
Pages (from-to)775-777
Number of pages3
JournalSemiconductor Science and Technology
Volume9
Issue number5 SUPPL
StatePublished - May 1994

Fingerprint

Modulation
modulation
transconductance
electron mobility
Impact ionization
valleys
Electron mobility
Transconductance
velocity distribution
transport properties
quantum wells
Transport properties
Semiconductor quantum wells
moments
saturation
ionization
Energy gap
Computer simulation
Substrates
simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials

Cite this

Yamada, T., Miyata, H., Zhou, J. R., & Ferry, D. K. (1994). Velocity overshoot in a modulation doped Si/Si1-xGex structure. Semiconductor Science and Technology, 9(5 SUPPL), 775-777.

Velocity overshoot in a modulation doped Si/Si1-xGex structure. / Yamada, Toshishige; Miyata, H.; Zhou, Jing Rong; Ferry, D. K.

In: Semiconductor Science and Technology, Vol. 9, No. 5 SUPPL, 05.1994, p. 775-777.

Research output: Contribution to journalArticle

Yamada, T, Miyata, H, Zhou, JR & Ferry, DK 1994, 'Velocity overshoot in a modulation doped Si/Si1-xGex structure', Semiconductor Science and Technology, vol. 9, no. 5 SUPPL, pp. 775-777.
Yamada T, Miyata H, Zhou JR, Ferry DK. Velocity overshoot in a modulation doped Si/Si1-xGex structure. Semiconductor Science and Technology. 1994 May;9(5 SUPPL):775-777.
Yamada, Toshishige ; Miyata, H. ; Zhou, Jing Rong ; Ferry, D. K. / Velocity overshoot in a modulation doped Si/Si1-xGex structure. In: Semiconductor Science and Technology. 1994 ; Vol. 9, No. 5 SUPPL. pp. 775-777.
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