Vapor deposition of diamond thin films on various substrates

Y. H. Lee, K. J. Bachmann, J. T. Glass, Y. M. LeGrice, R. J. Nemanich

Research output: Contribution to journalArticle

49 Scopus citations

Abstract

The growth of diamond films on various polycrystalline metal and (001) Si substrates by biased hot-filament chemical vapor deposition is discussed. The deposited films have been characterized by scanning electron microscopy, x-ray diffraction, Auger electron spectroscopy, and Raman spectroscopy. Films grown on Si, Ni, and W exhibited the best quality according to Raman sp 3/sp2 peak intensity ratios and the full width at half maximum of the 1332 cm-1 Raman peak. The relationship between this quality and substrate properties such as surface energy and lattice parameter is discussed. Also, the residual stress in the film as measured by the Raman peak shift is correlated with the thermal expansion coefficient of the substrate.

Original languageEnglish (US)
Pages (from-to)1916-1918
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number18
DOIs
StatePublished - Dec 1 1990
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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