Vapor deposition of diamond thin films on various substrates

Y. H. Lee; K. J. Bachmann; J. T. Glass; Y. M. LeGrice; R. J. Nemanich

doi:10.1063/1.104011

Vapor deposition of diamond thin films on various substrates

Y. H. Lee, K. J. Bachmann, J. T. Glass, Y. M. LeGrice, R. J. Nemanich

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Abstract

The growth of diamond films on various polycrystalline metal and (001) Si substrates by biased hot-filament chemical vapor deposition is discussed. The deposited films have been characterized by scanning electron microscopy, x-ray diffraction, Auger electron spectroscopy, and Raman spectroscopy. Films grown on Si, Ni, and W exhibited the best quality according to Raman sp ³/sp² peak intensity ratios and the full width at half maximum of the 1332 cm^-1 Raman peak. The relationship between this quality and substrate properties such as surface energy and lattice parameter is discussed. Also, the residual stress in the film as measured by the Raman peak shift is correlated with the thermal expansion coefficient of the substrate.

Original language	English (US)
Pages (from-to)	1916-1918
Number of pages	3
Journal	Applied Physics Letters
Volume	57
Issue number	18
DOIs	https://doi.org/10.1063/1.104011
State	Published - 1990
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Vapor deposition of diamond thin films on various substrates",

abstract = "The growth of diamond films on various polycrystalline metal and (001) Si substrates by biased hot-filament chemical vapor deposition is discussed. The deposited films have been characterized by scanning electron microscopy, x-ray diffraction, Auger electron spectroscopy, and Raman spectroscopy. Films grown on Si, Ni, and W exhibited the best quality according to Raman sp 3/sp2 peak intensity ratios and the full width at half maximum of the 1332 cm-1 Raman peak. The relationship between this quality and substrate properties such as surface energy and lattice parameter is discussed. Also, the residual stress in the film as measured by the Raman peak shift is correlated with the thermal expansion coefficient of the substrate.",

author = "Lee, {Y. H.} and Bachmann, {K. J.} and Glass, {J. T.} and LeGrice, {Y. M.} and Nemanich, {R. J.}",

year = "1990",

doi = "10.1063/1.104011",

language = "English (US)",

volume = "57",

pages = "1916--1918",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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T1 - Vapor deposition of diamond thin films on various substrates

AU - Lee, Y. H.

AU - Bachmann, K. J.

AU - Glass, J. T.

AU - LeGrice, Y. M.

AU - Nemanich, R. J.

PY - 1990

Y1 - 1990

N2 - The growth of diamond films on various polycrystalline metal and (001) Si substrates by biased hot-filament chemical vapor deposition is discussed. The deposited films have been characterized by scanning electron microscopy, x-ray diffraction, Auger electron spectroscopy, and Raman spectroscopy. Films grown on Si, Ni, and W exhibited the best quality according to Raman sp 3/sp2 peak intensity ratios and the full width at half maximum of the 1332 cm-1 Raman peak. The relationship between this quality and substrate properties such as surface energy and lattice parameter is discussed. Also, the residual stress in the film as measured by the Raman peak shift is correlated with the thermal expansion coefficient of the substrate.

AB - The growth of diamond films on various polycrystalline metal and (001) Si substrates by biased hot-filament chemical vapor deposition is discussed. The deposited films have been characterized by scanning electron microscopy, x-ray diffraction, Auger electron spectroscopy, and Raman spectroscopy. Films grown on Si, Ni, and W exhibited the best quality according to Raman sp 3/sp2 peak intensity ratios and the full width at half maximum of the 1332 cm-1 Raman peak. The relationship between this quality and substrate properties such as surface energy and lattice parameter is discussed. Also, the residual stress in the film as measured by the Raman peak shift is correlated with the thermal expansion coefficient of the substrate.

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EP - 1918

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Vapor deposition of diamond thin films on various substrates

Abstract

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