Vanishing hall voltage in a quasi-one-dimensional GaAs-AlxGa1-xAs heterojunction

C. J.B. Ford, T. J. Thornton, R. Newbury, M. Pepper, H. Ahmed, D. C. Peacock, D. A. Ritchie, J. E.F. Frost, G. A.C. Jones

Research output: Contribution to journalArticle

81 Scopus citations

Abstract

We have measured the Hall voltage developed across a narrow, high-mobility two-dimensional electron gas of variable width. For narrow channels, the Hall voltage vanishes when the prependicular magnetic field is reduced below a certain, critical value. If the magnetic field is kept constant as the width of the channel is reduced, the Hall voltage shows large departures from the classically expected result.

Original languageEnglish (US)
Pages (from-to)8518-8521
Number of pages4
JournalPhysical Review B
Volume38
Issue number12
DOIs
StatePublished - Jan 1 1988
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics

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  • Cite this

    Ford, C. J. B., Thornton, T. J., Newbury, R., Pepper, M., Ahmed, H., Peacock, D. C., Ritchie, D. A., Frost, J. E. F., & Jones, G. A. C. (1988). Vanishing hall voltage in a quasi-one-dimensional GaAs-AlxGa1-xAs heterojunction. Physical Review B, 38(12), 8518-8521. https://doi.org/10.1103/PhysRevB.38.8518