Validity of the relation between spontaneous and stimulated emissions in semiconductors

Research output: Chapter in Book/Report/Conference proceedingChapter

3 Scopus citations

Abstract

Validity of the relation between spontaneous emission and stimulated emission (or gain) in a semiconductor is revisited. It is shown that this relation, while exact for the case of zero-linewidth, is in general not valid for all the commonly used lineshapes at low excitation levels. At high excitation levels well beyond the transparency density, the validity is almost exact for the Gauss- and Sech-lineshapes. Even at high excitation level, this relation is still not valid for the Lorentzian lineshape. The convoluted Lorentzian lineshape, for which the relation between stimulated and spontaneous emissions is exactly valid, is shown to allow an effective lineshape function which can be expressed explicitly in terms of elementary functions.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages622-632
Number of pages11
Volume3625
StatePublished - 1999
Externally publishedYes
EventProceedings of the 1999 Physics and Simulation of Optoelectronic Devices VII - San Jose, CA, USA
Duration: Jan 25 1999Jan 29 1999

Other

OtherProceedings of the 1999 Physics and Simulation of Optoelectronic Devices VII
CitySan Jose, CA, USA
Period1/25/991/29/99

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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  • Cite this

    Ning, C-Z. (1999). Validity of the relation between spontaneous and stimulated emissions in semiconductors. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 3625, pp. 622-632). Society of Photo-Optical Instrumentation Engineers.