Abstract
Validity of the relation between spontaneous emission and stimulated emission (or gain) in a semiconductor is revisited. It is shown that this relation, while exact for the case of zero-linewidth, is in general not valid for all the commonly used lineshapes at low excitation levels. At high excitation levels well beyond the transparency density, the validity is almost exact for the Gauss- and Sech-lineshapes. Even at high excitation level, this relation is still not valid for the Lorentzian lineshape. The convoluted Lorentzian lineshape, for which the relation between stimulated and spontaneous emissions is exactly valid, is shown to allow an effective lineshape function which can be expressed explicitly in terms of elementary functions.
Original language | English (US) |
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Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
Publisher | Society of Photo-Optical Instrumentation Engineers |
Pages | 622-632 |
Number of pages | 11 |
Volume | 3625 |
State | Published - 1999 |
Externally published | Yes |
Event | Proceedings of the 1999 Physics and Simulation of Optoelectronic Devices VII - San Jose, CA, USA Duration: Jan 25 1999 → Jan 29 1999 |
Other
Other | Proceedings of the 1999 Physics and Simulation of Optoelectronic Devices VII |
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City | San Jose, CA, USA |
Period | 1/25/99 → 1/29/99 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics