Abstract
A ring oscillator based test structure with special power multiplexing to allow accurate active and standby (leakage) power measurements with minimal test chip pin count is presented. This structure is used to validate radiation hardened by design (RHBD) standard cell library gates for TID hardness and delay. Additionally, the performance of standard commercial two-edge gates and their annular counterparts are also compared experimentally. The gate delay and energy per transition is shown to be significantly increased for some RHBD gates over their two-edge counterparts. Large ring oscillator delay variations are also shown, even with all test die from the same wafer.
| Original language | English (US) |
|---|---|
| Title of host publication | 2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011 |
| Pages | 2051-2054 |
| Number of pages | 4 |
| DOIs | |
| State | Published - Aug 2 2011 |
| Event | 2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011 - Rio de Janeiro, Brazil Duration: May 15 2011 → May 18 2011 |
Publication series
| Name | Proceedings - IEEE International Symposium on Circuits and Systems |
|---|---|
| ISSN (Print) | 0271-4310 |
Other
| Other | 2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011 |
|---|---|
| Country | Brazil |
| City | Rio de Janeiro |
| Period | 5/15/11 → 5/18/11 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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Clark, L. T., Pettit, D. E., Holbert, K., & Hindman, N. D. (2011). Validation of and delay variation in total ionizing dose hardened standard cell libraries. In 2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011 (pp. 2051-2054). [5938000] (Proceedings - IEEE International Symposium on Circuits and Systems). https://doi.org/10.1109/ISCAS.2011.5938000