A ring oscillator based test structure with special power multiplexing to allow accurate active and standby (leakage) power measurements with minimal test chip pin count is presented. This structure is used to validate radiation hardened by design (RHBD) standard cell library gates for TID hardness and delay. Additionally, the performance of standard commercial two-edge gates and their annular counterparts are also compared experimentally. The gate delay and energy per transition is shown to be significantly increased for some RHBD gates over their two-edge counterparts. Large ring oscillator delay variations are also shown, even with all test die from the same wafer.