Vacancy diffusion along twist grain boundaries in copper

Miki Nomura, Sing Yun Lee, James Adams

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Vacancy diffusion along two different high-angle twist grain boundaries (Σ5 and Σ13) was studied using the Embedded Atom Method (EAM). Vacancy formation energies in all the possible sites were calculated and found to be directly related to degree of coincidence with the neighboring crystal planes. Optimal migration paths and migration energies were determined and found to be very low. The activation energies for self-diffusion at the boundaries were found to be less than half of the bulk value.

Original languageEnglish (US)
Pages (from-to)1-4
Number of pages4
JournalJournal of Materials Research
Volume6
Issue number1
StatePublished - Jan 1991
Externally publishedYes

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Vacancies
Copper
Grain boundaries
grain boundaries
copper
embedded atom method
energy of formation
Activation energy
activation energy
Atoms
Crystals
crystals
energy

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Vacancy diffusion along twist grain boundaries in copper. / Nomura, Miki; Lee, Sing Yun; Adams, James.

In: Journal of Materials Research, Vol. 6, No. 1, 01.1991, p. 1-4.

Research output: Contribution to journalArticle

Nomura, Miki ; Lee, Sing Yun ; Adams, James. / Vacancy diffusion along twist grain boundaries in copper. In: Journal of Materials Research. 1991 ; Vol. 6, No. 1. pp. 1-4.
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