UV Raman study of A1(LO) and E2 phonons in InGaN alloys grown by metal-organic chemical vapor deposition on (0001) sapphire substrates

Dimitri Alexson; Leah Bergman; Robert Nemanich; Mitra Dutta; Michael A. Stroscio; C. A. Parker; S. M. Bedair; N. A. El-Masry; Fran Adar

UV Raman study of A₁(LO) and E₂ phonons in InGaN alloys grown by metal-organic chemical vapor deposition on (0001) sapphire substrates

Dimitri Alexson, Leah Bergman, Robert Nemanich, Mitra Dutta, Michael A. Stroscio, C. A. Parker, S. M. Bedair, N. A. El-Masry, Fran Adar

Research output: Contribution to journal › Article › peer-review

Abstract

We report on UV Raman spectroscopy of In_xGa_1-xN thin films grown on (0001) sapphire substrates using a specially designed metal-organic chemical vapor deposition (MOCVD) reactor. Eight films were examined in the compositional range 0<×<0.50. Mid and deep-UV Raman spectroscopy was done with the 325.2 nm line of the HeCd laser and the 244 nm line of a double frequency Ar ion laser. The mode behavior of the A₁(LO) and E₂ phonons was also investigated. We have found compelling evidence for one-mode behavior for the A₁(LO) phonon mode, while our data for the E₂ mode deviates from the predictions for one-mode behavior. The results for the A₁(LO) mode are consistent with the previously reported phonon mode behavior in AlGaN alloys. Also, evidence regarding the presence of compositional inhomogeneities and spinodal decomposition in InGaN thin films is presented.

Original language	English (US)
Pages (from-to)	G9.7.1-G9.7.6
Journal	Materials Research Society Symposium - Proceedings
Volume	639
State	Published - 2001
Externally published	Yes

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{5cb332a52c3f41639ed341db5ac16a55,

title = "UV Raman study of A1(LO) and E2 phonons in InGaN alloys grown by metal-organic chemical vapor deposition on (0001) sapphire substrates",

abstract = "We report on UV Raman spectroscopy of InxGa1-xN thin films grown on (0001) sapphire substrates using a specially designed metal-organic chemical vapor deposition (MOCVD) reactor. Eight films were examined in the compositional range 0<×<0.50. Mid and deep-UV Raman spectroscopy was done with the 325.2 nm line of the HeCd laser and the 244 nm line of a double frequency Ar ion laser. The mode behavior of the A1(LO) and E2 phonons was also investigated. We have found compelling evidence for one-mode behavior for the A1(LO) phonon mode, while our data for the E2 mode deviates from the predictions for one-mode behavior. The results for the A1(LO) mode are consistent with the previously reported phonon mode behavior in AlGaN alloys. Also, evidence regarding the presence of compositional inhomogeneities and spinodal decomposition in InGaN thin films is presented.",

author = "Dimitri Alexson and Leah Bergman and Robert Nemanich and Mitra Dutta and Stroscio, {Michael A.} and Parker, {C. A.} and Bedair, {S. M.} and El-Masry, {N. A.} and Fran Adar",

year = "2001",

language = "English (US)",

volume = "639",

pages = "G9.7.1--G9.7.6",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - UV Raman study of A1(LO) and E2 phonons in InGaN alloys grown by metal-organic chemical vapor deposition on (0001) sapphire substrates

AU - Alexson, Dimitri

AU - Bergman, Leah

AU - Nemanich, Robert

AU - Dutta, Mitra

AU - Stroscio, Michael A.

AU - Parker, C. A.

AU - Bedair, S. M.

AU - El-Masry, N. A.

AU - Adar, Fran

PY - 2001

Y1 - 2001

N2 - We report on UV Raman spectroscopy of InxGa1-xN thin films grown on (0001) sapphire substrates using a specially designed metal-organic chemical vapor deposition (MOCVD) reactor. Eight films were examined in the compositional range 0<×<0.50. Mid and deep-UV Raman spectroscopy was done with the 325.2 nm line of the HeCd laser and the 244 nm line of a double frequency Ar ion laser. The mode behavior of the A1(LO) and E2 phonons was also investigated. We have found compelling evidence for one-mode behavior for the A1(LO) phonon mode, while our data for the E2 mode deviates from the predictions for one-mode behavior. The results for the A1(LO) mode are consistent with the previously reported phonon mode behavior in AlGaN alloys. Also, evidence regarding the presence of compositional inhomogeneities and spinodal decomposition in InGaN thin films is presented.

AB - We report on UV Raman spectroscopy of InxGa1-xN thin films grown on (0001) sapphire substrates using a specially designed metal-organic chemical vapor deposition (MOCVD) reactor. Eight films were examined in the compositional range 0<×<0.50. Mid and deep-UV Raman spectroscopy was done with the 325.2 nm line of the HeCd laser and the 244 nm line of a double frequency Ar ion laser. The mode behavior of the A1(LO) and E2 phonons was also investigated. We have found compelling evidence for one-mode behavior for the A1(LO) phonon mode, while our data for the E2 mode deviates from the predictions for one-mode behavior. The results for the A1(LO) mode are consistent with the previously reported phonon mode behavior in AlGaN alloys. Also, evidence regarding the presence of compositional inhomogeneities and spinodal decomposition in InGaN thin films is presented.

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M3 - Article

AN - SCOPUS:85010737257

SN - 0272-9172

VL - 639

SP - G9.7.1-G9.7.6

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

ER -

UV Raman study of A₁(LO) and E₂ phonons in InGaN alloys grown by metal-organic chemical vapor deposition on (0001) sapphire substrates

Abstract

ASJC Scopus subject areas

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