UV Raman study of A1(LO) and E2 phonons in InGaN alloys grown by metal-organic chemical vapor deposition on (0001) sapphire substrates

Dimitri Alexson, Leah Bergman, Robert Nemanich, Mitra Dutta, Michael A. Stroscio, C. A. Parker, S. M. Bedair, N. A. El-Masry, Fran Adar

Research output: Contribution to journalArticle

Abstract

We report on UV Raman spectroscopy of InxGa1-xN thin films grown on (0001) sapphire substrates using a specially designed metal-organic chemical vapor deposition (MOCVD) reactor. Eight films were examined in the compositional range 0<×<0.50. Mid and deep-UV Raman spectroscopy was done with the 325.2 nm line of the HeCd laser and the 244 nm line of a double frequency Ar ion laser. The mode behavior of the A1(LO) and E2 phonons was also investigated. We have found compelling evidence for one-mode behavior for the A1(LO) phonon mode, while our data for the E2 mode deviates from the predictions for one-mode behavior. The results for the A1(LO) mode are consistent with the previously reported phonon mode behavior in AlGaN alloys. Also, evidence regarding the presence of compositional inhomogeneities and spinodal decomposition in InGaN thin films is presented.

Original languageEnglish (US)
Pages (from-to)G9.7.1-G9.7.6
JournalMaterials Research Society Symposium - Proceedings
Volume639
StatePublished - 2001
Externally publishedYes

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Organic Chemicals
Aluminum Oxide
Organic chemicals
Phonons
Ultraviolet spectroscopy
Sapphire
metalorganic chemical vapor deposition
Raman spectroscopy
Chemical vapor deposition
sapphire
phonons
Metals
Spinodal decomposition
Thin films
Lasers
Substrates
Laser modes
Ions
thin films
lasers

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

UV Raman study of A1(LO) and E2 phonons in InGaN alloys grown by metal-organic chemical vapor deposition on (0001) sapphire substrates. / Alexson, Dimitri; Bergman, Leah; Nemanich, Robert; Dutta, Mitra; Stroscio, Michael A.; Parker, C. A.; Bedair, S. M.; El-Masry, N. A.; Adar, Fran.

In: Materials Research Society Symposium - Proceedings, Vol. 639, 2001, p. G9.7.1-G9.7.6.

Research output: Contribution to journalArticle

Alexson, D, Bergman, L, Nemanich, R, Dutta, M, Stroscio, MA, Parker, CA, Bedair, SM, El-Masry, NA & Adar, F 2001, 'UV Raman study of A1(LO) and E2 phonons in InGaN alloys grown by metal-organic chemical vapor deposition on (0001) sapphire substrates', Materials Research Society Symposium - Proceedings, vol. 639, pp. G9.7.1-G9.7.6.
Alexson, Dimitri ; Bergman, Leah ; Nemanich, Robert ; Dutta, Mitra ; Stroscio, Michael A. ; Parker, C. A. ; Bedair, S. M. ; El-Masry, N. A. ; Adar, Fran. / UV Raman study of A1(LO) and E2 phonons in InGaN alloys grown by metal-organic chemical vapor deposition on (0001) sapphire substrates. In: Materials Research Society Symposium - Proceedings. 2001 ; Vol. 639. pp. G9.7.1-G9.7.6.
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abstract = "We report on UV Raman spectroscopy of InxGa1-xN thin films grown on (0001) sapphire substrates using a specially designed metal-organic chemical vapor deposition (MOCVD) reactor. Eight films were examined in the compositional range 0<×<0.50. Mid and deep-UV Raman spectroscopy was done with the 325.2 nm line of the HeCd laser and the 244 nm line of a double frequency Ar ion laser. The mode behavior of the A1(LO) and E2 phonons was also investigated. We have found compelling evidence for one-mode behavior for the A1(LO) phonon mode, while our data for the E2 mode deviates from the predictions for one-mode behavior. The results for the A1(LO) mode are consistent with the previously reported phonon mode behavior in AlGaN alloys. Also, evidence regarding the presence of compositional inhomogeneities and spinodal decomposition in InGaN thin films is presented.",
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AU - Alexson, Dimitri

AU - Bergman, Leah

AU - Nemanich, Robert

AU - Dutta, Mitra

AU - Stroscio, Michael A.

AU - Parker, C. A.

AU - Bedair, S. M.

AU - El-Masry, N. A.

AU - Adar, Fran

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N2 - We report on UV Raman spectroscopy of InxGa1-xN thin films grown on (0001) sapphire substrates using a specially designed metal-organic chemical vapor deposition (MOCVD) reactor. Eight films were examined in the compositional range 0<×<0.50. Mid and deep-UV Raman spectroscopy was done with the 325.2 nm line of the HeCd laser and the 244 nm line of a double frequency Ar ion laser. The mode behavior of the A1(LO) and E2 phonons was also investigated. We have found compelling evidence for one-mode behavior for the A1(LO) phonon mode, while our data for the E2 mode deviates from the predictions for one-mode behavior. The results for the A1(LO) mode are consistent with the previously reported phonon mode behavior in AlGaN alloys. Also, evidence regarding the presence of compositional inhomogeneities and spinodal decomposition in InGaN thin films is presented.

AB - We report on UV Raman spectroscopy of InxGa1-xN thin films grown on (0001) sapphire substrates using a specially designed metal-organic chemical vapor deposition (MOCVD) reactor. Eight films were examined in the compositional range 0<×<0.50. Mid and deep-UV Raman spectroscopy was done with the 325.2 nm line of the HeCd laser and the 244 nm line of a double frequency Ar ion laser. The mode behavior of the A1(LO) and E2 phonons was also investigated. We have found compelling evidence for one-mode behavior for the A1(LO) phonon mode, while our data for the E2 mode deviates from the predictions for one-mode behavior. The results for the A1(LO) mode are consistent with the previously reported phonon mode behavior in AlGaN alloys. Also, evidence regarding the presence of compositional inhomogeneities and spinodal decomposition in InGaN thin films is presented.

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