UV Raman study of A
            1(LO) and E
            2 phonons in InGaN alloys grown by metal-organic chemical vapor deposition on (0001) sapphire substrates

Dimitri Alexson; Leah Bergman; Robert Nemanich; Mitra Dutta; Michael A. Stroscio; C. A. Parker; S. M. Bedair; N. A. El-Masry; Fran Adar

UV Raman study of A ₁(LO) and E ₂ phonons in InGaN alloys grown by metal-organic chemical vapor deposition on (0001) sapphire substrates

Dimitri Alexson, Leah Bergman, Robert Nemanich, Mitra Dutta, Michael A. Stroscio, C. A. Parker, S. M. Bedair, N. A. El-Masry, Fran Adar

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

We report on UV Raman spectroscopy of In _xGa _1-xN thin films grown on (0001) sapphire substrates using a specially designed metal-organic chemical vapor deposition (MOCVD) reactor. Eight films were examined in the compositional range 0<×<0.50. Mid and deep-UV Raman spectroscopy was done with the 325.2 nm line of the HeCd laser and the 244 nm line of a double frequency Ar ion laser. The mode behavior of the A ₁(LO) and E ₂ phonons was also investigated. We have found compelling evidence for one-mode behavior for the A ₁(LO) phonon mode, while our data for the E ₂ mode deviates from the predictions for one-mode behavior. The results for the A ₁(LO) mode are consistent with the previously reported phonon mode behavior in AlGaN alloys. Also, evidence regarding the presence of compositional inhomogeneities and spinodal decomposition in InGaN thin films is presented.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Editors	C Wetzel, M Shur, U Mishra, B Gil, K Kishino
Volume	639
State	Published - 2001
Externally published	Yes
Event	GaN and Related Alloys 2000 - Boston, MA, United States Duration: Nov 27 2000 → Dec 1 2000

Other

Other	GaN and Related Alloys 2000
Country/Territory	United States
City	Boston, MA
Period	11/27/00 → 12/1/00

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

Alexson, D., Bergman, L., Nemanich, R., Dutta, M., Stroscio, M. A., Parker, C. A., Bedair, S. M., El-Masry, N. A., & Adar, F. (2001). UV Raman study of A ₁(LO) and E ₂ phonons in InGaN alloys grown by metal-organic chemical vapor deposition on (0001) sapphire substrates In C. Wetzel, M. Shur, U. Mishra, B. Gil, & K. Kishino (Eds.), Materials Research Society Symposium - Proceedings (Vol. 639)

UV Raman study of A ₁(LO) and E ₂ phonons in InGaN alloys grown by metal-organic chemical vapor deposition on (0001) sapphire substrates . / Alexson, Dimitri; Bergman, Leah; Nemanich, Robert et al.
Materials Research Society Symposium - Proceedings. ed. / C Wetzel; M Shur; U Mishra; B Gil; K Kishino. Vol. 639 2001.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Alexson, D, Bergman, L, Nemanich, R, Dutta, M, Stroscio, MA, Parker, CA, Bedair, SM, El-Masry, NA & Adar, F 2001, UV Raman study of A ₁(LO) and E ₂ phonons in InGaN alloys grown by metal-organic chemical vapor deposition on (0001) sapphire substrates in C Wetzel, M Shur, U Mishra, B Gil & K Kishino (eds), Materials Research Society Symposium - Proceedings. vol. 639, GaN and Related Alloys 2000, Boston, MA, United States, 11/27/00.

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title = "UV Raman study of A 1(LO) and E 2 phonons in InGaN alloys grown by metal-organic chemical vapor deposition on (0001) sapphire substrates ",

abstract = "We report on UV Raman spectroscopy of In xGa 1-xN thin films grown on (0001) sapphire substrates using a specially designed metal-organic chemical vapor deposition (MOCVD) reactor. Eight films were examined in the compositional range 0<×<0.50. Mid and deep-UV Raman spectroscopy was done with the 325.2 nm line of the HeCd laser and the 244 nm line of a double frequency Ar ion laser. The mode behavior of the A 1(LO) and E 2 phonons was also investigated. We have found compelling evidence for one-mode behavior for the A 1(LO) phonon mode, while our data for the E 2 mode deviates from the predictions for one-mode behavior. The results for the A 1(LO) mode are consistent with the previously reported phonon mode behavior in AlGaN alloys. Also, evidence regarding the presence of compositional inhomogeneities and spinodal decomposition in InGaN thin films is presented. ",

author = "Dimitri Alexson and Leah Bergman and Robert Nemanich and Mitra Dutta and Stroscio, {Michael A.} and Parker, {C. A.} and Bedair, {S. M.} and El-Masry, {N. A.} and Fran Adar",

year = "2001",

language = "English (US)",

volume = "639",

editor = "C Wetzel and M Shur and U Mishra and B Gil and K Kishino",

booktitle = "Materials Research Society Symposium - Proceedings",

note = "GaN and Related Alloys 2000 ; Conference date: 27-11-2000 Through 01-12-2000",

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T1 - UV Raman study of A 1(LO) and E 2 phonons in InGaN alloys grown by metal-organic chemical vapor deposition on (0001) sapphire substrates

AU - Alexson, Dimitri

AU - Bergman, Leah

AU - Nemanich, Robert

AU - Dutta, Mitra

AU - Stroscio, Michael A.

AU - Parker, C. A.

AU - Bedair, S. M.

AU - El-Masry, N. A.

AU - Adar, Fran

PY - 2001

Y1 - 2001

N2 - We report on UV Raman spectroscopy of In xGa 1-xN thin films grown on (0001) sapphire substrates using a specially designed metal-organic chemical vapor deposition (MOCVD) reactor. Eight films were examined in the compositional range 0<×<0.50. Mid and deep-UV Raman spectroscopy was done with the 325.2 nm line of the HeCd laser and the 244 nm line of a double frequency Ar ion laser. The mode behavior of the A 1(LO) and E 2 phonons was also investigated. We have found compelling evidence for one-mode behavior for the A 1(LO) phonon mode, while our data for the E 2 mode deviates from the predictions for one-mode behavior. The results for the A 1(LO) mode are consistent with the previously reported phonon mode behavior in AlGaN alloys. Also, evidence regarding the presence of compositional inhomogeneities and spinodal decomposition in InGaN thin films is presented.

AB - We report on UV Raman spectroscopy of In xGa 1-xN thin films grown on (0001) sapphire substrates using a specially designed metal-organic chemical vapor deposition (MOCVD) reactor. Eight films were examined in the compositional range 0<×<0.50. Mid and deep-UV Raman spectroscopy was done with the 325.2 nm line of the HeCd laser and the 244 nm line of a double frequency Ar ion laser. The mode behavior of the A 1(LO) and E 2 phonons was also investigated. We have found compelling evidence for one-mode behavior for the A 1(LO) phonon mode, while our data for the E 2 mode deviates from the predictions for one-mode behavior. The results for the A 1(LO) mode are consistent with the previously reported phonon mode behavior in AlGaN alloys. Also, evidence regarding the presence of compositional inhomogeneities and spinodal decomposition in InGaN thin films is presented.

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M3 - Conference contribution

AN - SCOPUS:0035558752

VL - 639

BT - Materials Research Society Symposium - Proceedings

A2 - Wetzel, C

A2 - Shur, M

A2 - Mishra, U

A2 - Gil, B

A2 - Kishino, K

T2 - GaN and Related Alloys 2000

Y2 - 27 November 2000 through 1 December 2000

ER -

UV Raman study of A ₁(LO) and E ₂ phonons in InGaN alloys grown by metal-organic chemical vapor deposition on (0001) sapphire substrates

Abstract

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ASJC Scopus subject areas

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