UV Raman study of A 1(LO) and E 2 phonons in InGaN alloys grown by metal-organic chemical vapor deposition on (0001) sapphire substrates

Dimitri Alexson, Leah Bergman, Robert Nemanich, Mitra Dutta, Michael A. Stroscio, C. A. Parker, S. M. Bedair, N. A. El-Masry, Fran Adar

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


We report on UV Raman spectroscopy of In xGa 1-xN thin films grown on (0001) sapphire substrates using a specially designed metal-organic chemical vapor deposition (MOCVD) reactor. Eight films were examined in the compositional range 0<×<0.50. Mid and deep-UV Raman spectroscopy was done with the 325.2 nm line of the HeCd laser and the 244 nm line of a double frequency Ar ion laser. The mode behavior of the A 1(LO) and E 2 phonons was also investigated. We have found compelling evidence for one-mode behavior for the A 1(LO) phonon mode, while our data for the E 2 mode deviates from the predictions for one-mode behavior. The results for the A 1(LO) mode are consistent with the previously reported phonon mode behavior in AlGaN alloys. Also, evidence regarding the presence of compositional inhomogeneities and spinodal decomposition in InGaN thin films is presented.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsC Wetzel, M Shur, U Mishra, B Gil, K Kishino
StatePublished - 2001
Externally publishedYes
EventGaN and Related Alloys 2000 - Boston, MA, United States
Duration: Nov 27 2000Dec 1 2000


OtherGaN and Related Alloys 2000
Country/TerritoryUnited States
CityBoston, MA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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