UV Raman Scattering Analysis of Indented and Machined 6H-SiC and β-Si 3N 4 Surfaces

Jennifer J H Walter, Mengning Liang, Xiang Bai Chen, Jae Il Jang, Leah Bergman, John A. Patten, George M. Pharr, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

UV Raman scattering is employed as a nondestructive structure sensitive probe to investigate the vibrational properties of the wide bandgap, machined and indented surfaces of 6H-SiC and β-Si 3N 4. In these materials, the short absorption depth of UV light allows for accurate probing of the surface, and the transparency to visible light allows for analysis of the bulk material. The study on 6H-SiC (0001) included measurements of indentations, and of machined circular (0001) wafer edges. The indentation analysis indicates the response of the material to localized pressures. Machined 6H-SiC wafer edges and machined β-Si 3N 4 surfaces indicate a ductile response and ductile material removal for machining at cutting depths on a nm and μm scale. Raman scattering measurements of the ductile surfaces and ductile material removed indicate residual structure changes. The residual surface structures could indicate that a high-pressure phase transformation is the origin of a ductile response on machined brittle materials.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsS.N. Basu, J.E. Krzanowski, J. Patschneider, Y. Gogotsi
Pages75-80
Number of pages6
Volume843
StatePublished - 2005
Externally publishedYes
EventSurface Engineering 2004 - Fundamentals and Applications - Boston, MA, United States
Duration: Nov 30 2004Dec 2 2004

Other

OtherSurface Engineering 2004 - Fundamentals and Applications
CountryUnited States
CityBoston, MA
Period11/30/0412/2/04

Fingerprint

Raman scattering
Indentation
Brittleness
Surface structure
Ultraviolet radiation
Transparency
Machining
Energy gap
Phase transitions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Walter, J. J. H., Liang, M., Chen, X. B., Jang, J. I., Bergman, L., Patten, J. A., ... Nemanich, R. (2005). UV Raman Scattering Analysis of Indented and Machined 6H-SiC and β-Si 3N 4 Surfaces In S. N. Basu, J. E. Krzanowski, J. Patschneider, & Y. Gogotsi (Eds.), Materials Research Society Symposium Proceedings (Vol. 843, pp. 75-80). [T4.10]

UV Raman Scattering Analysis of Indented and Machined 6H-SiC and β-Si 3N 4 Surfaces . / Walter, Jennifer J H; Liang, Mengning; Chen, Xiang Bai; Jang, Jae Il; Bergman, Leah; Patten, John A.; Pharr, George M.; Nemanich, Robert.

Materials Research Society Symposium Proceedings. ed. / S.N. Basu; J.E. Krzanowski; J. Patschneider; Y. Gogotsi. Vol. 843 2005. p. 75-80 T4.10.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Walter, JJH, Liang, M, Chen, XB, Jang, JI, Bergman, L, Patten, JA, Pharr, GM & Nemanich, R 2005, UV Raman Scattering Analysis of Indented and Machined 6H-SiC and β-Si 3N 4 Surfaces in SN Basu, JE Krzanowski, J Patschneider & Y Gogotsi (eds), Materials Research Society Symposium Proceedings. vol. 843, T4.10, pp. 75-80, Surface Engineering 2004 - Fundamentals and Applications, Boston, MA, United States, 11/30/04.
Walter JJH, Liang M, Chen XB, Jang JI, Bergman L, Patten JA et al. UV Raman Scattering Analysis of Indented and Machined 6H-SiC and β-Si 3N 4 Surfaces In Basu SN, Krzanowski JE, Patschneider J, Gogotsi Y, editors, Materials Research Society Symposium Proceedings. Vol. 843. 2005. p. 75-80. T4.10
Walter, Jennifer J H ; Liang, Mengning ; Chen, Xiang Bai ; Jang, Jae Il ; Bergman, Leah ; Patten, John A. ; Pharr, George M. ; Nemanich, Robert. / UV Raman Scattering Analysis of Indented and Machined 6H-SiC and β-Si 3N 4 Surfaces Materials Research Society Symposium Proceedings. editor / S.N. Basu ; J.E. Krzanowski ; J. Patschneider ; Y. Gogotsi. Vol. 843 2005. pp. 75-80
@inproceedings{6e114343069743218f50e170f14a3ede,
title = "UV Raman Scattering Analysis of Indented and Machined 6H-SiC and β-Si 3N 4 Surfaces",
abstract = "UV Raman scattering is employed as a nondestructive structure sensitive probe to investigate the vibrational properties of the wide bandgap, machined and indented surfaces of 6H-SiC and β-Si 3N 4. In these materials, the short absorption depth of UV light allows for accurate probing of the surface, and the transparency to visible light allows for analysis of the bulk material. The study on 6H-SiC (0001) included measurements of indentations, and of machined circular (0001) wafer edges. The indentation analysis indicates the response of the material to localized pressures. Machined 6H-SiC wafer edges and machined β-Si 3N 4 surfaces indicate a ductile response and ductile material removal for machining at cutting depths on a nm and μm scale. Raman scattering measurements of the ductile surfaces and ductile material removed indicate residual structure changes. The residual surface structures could indicate that a high-pressure phase transformation is the origin of a ductile response on machined brittle materials.",
author = "Walter, {Jennifer J H} and Mengning Liang and Chen, {Xiang Bai} and Jang, {Jae Il} and Leah Bergman and Patten, {John A.} and Pharr, {George M.} and Robert Nemanich",
year = "2005",
language = "English (US)",
volume = "843",
pages = "75--80",
editor = "S.N. Basu and J.E. Krzanowski and J. Patschneider and Y. Gogotsi",
booktitle = "Materials Research Society Symposium Proceedings",

}

TY - GEN

T1 - UV Raman Scattering Analysis of Indented and Machined 6H-SiC and β-Si 3N 4 Surfaces

AU - Walter, Jennifer J H

AU - Liang, Mengning

AU - Chen, Xiang Bai

AU - Jang, Jae Il

AU - Bergman, Leah

AU - Patten, John A.

AU - Pharr, George M.

AU - Nemanich, Robert

PY - 2005

Y1 - 2005

N2 - UV Raman scattering is employed as a nondestructive structure sensitive probe to investigate the vibrational properties of the wide bandgap, machined and indented surfaces of 6H-SiC and β-Si 3N 4. In these materials, the short absorption depth of UV light allows for accurate probing of the surface, and the transparency to visible light allows for analysis of the bulk material. The study on 6H-SiC (0001) included measurements of indentations, and of machined circular (0001) wafer edges. The indentation analysis indicates the response of the material to localized pressures. Machined 6H-SiC wafer edges and machined β-Si 3N 4 surfaces indicate a ductile response and ductile material removal for machining at cutting depths on a nm and μm scale. Raman scattering measurements of the ductile surfaces and ductile material removed indicate residual structure changes. The residual surface structures could indicate that a high-pressure phase transformation is the origin of a ductile response on machined brittle materials.

AB - UV Raman scattering is employed as a nondestructive structure sensitive probe to investigate the vibrational properties of the wide bandgap, machined and indented surfaces of 6H-SiC and β-Si 3N 4. In these materials, the short absorption depth of UV light allows for accurate probing of the surface, and the transparency to visible light allows for analysis of the bulk material. The study on 6H-SiC (0001) included measurements of indentations, and of machined circular (0001) wafer edges. The indentation analysis indicates the response of the material to localized pressures. Machined 6H-SiC wafer edges and machined β-Si 3N 4 surfaces indicate a ductile response and ductile material removal for machining at cutting depths on a nm and μm scale. Raman scattering measurements of the ductile surfaces and ductile material removed indicate residual structure changes. The residual surface structures could indicate that a high-pressure phase transformation is the origin of a ductile response on machined brittle materials.

UR - http://www.scopus.com/inward/record.url?scp=20344387220&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20344387220&partnerID=8YFLogxK

M3 - Conference contribution

VL - 843

SP - 75

EP - 80

BT - Materials Research Society Symposium Proceedings

A2 - Basu, S.N.

A2 - Krzanowski, J.E.

A2 - Patschneider, J.

A2 - Gogotsi, Y.

ER -