UV Raman Scattering Analysis of Indented and Machined 6H-SiC and β-Si 3N 4 Surfaces

Jennifer J H Walter, Mengning Liang, Xiang Bai Chen, Jae Il Jang, Leah Bergman, John A. Patten, George M. Pharr, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

UV Raman scattering is employed as a nondestructive structure sensitive probe to investigate the vibrational properties of the wide bandgap, machined and indented surfaces of 6H-SiC and β-Si 3N 4. In these materials, the short absorption depth of UV light allows for accurate probing of the surface, and the transparency to visible light allows for analysis of the bulk material. The study on 6H-SiC (0001) included measurements of indentations, and of machined circular (0001) wafer edges. The indentation analysis indicates the response of the material to localized pressures. Machined 6H-SiC wafer edges and machined β-Si 3N 4 surfaces indicate a ductile response and ductile material removal for machining at cutting depths on a nm and μm scale. Raman scattering measurements of the ductile surfaces and ductile material removed indicate residual structure changes. The residual surface structures could indicate that a high-pressure phase transformation is the origin of a ductile response on machined brittle materials.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsS.N. Basu, J.E. Krzanowski, J. Patschneider, Y. Gogotsi
Pages75-80
Number of pages6
Volume843
StatePublished - 2005
Externally publishedYes
EventSurface Engineering 2004 - Fundamentals and Applications - Boston, MA, United States
Duration: Nov 30 2004Dec 2 2004

Other

OtherSurface Engineering 2004 - Fundamentals and Applications
CountryUnited States
CityBoston, MA
Period11/30/0412/2/04

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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