Abstract
UV Raman scattering is employed as a nondestructive structure sensitive probe to investigate the vibrational properties of the wide bandgap, machined and indented surfaces of 6H-SiC and β-Si 3N 4. In these materials, the short absorption depth of UV light allows for accurate probing of the surface, and the transparency to visible light allows for analysis of the bulk material. The study on 6H-SiC (0001) included measurements of indentations, and of machined circular (0001) wafer edges. The indentation analysis indicates the response of the material to localized pressures. Machined 6H-SiC wafer edges and machined β-Si 3N 4 surfaces indicate a ductile response and ductile material removal for machining at cutting depths on a nm and μm scale. Raman scattering measurements of the ductile surfaces and ductile material removed indicate residual structure changes. The residual surface structures could indicate that a high-pressure phase transformation is the origin of a ductile response on machined brittle materials.
| Original language | English (US) |
|---|---|
| Title of host publication | Materials Research Society Symposium Proceedings |
| Editors | S.N. Basu, J.E. Krzanowski, J. Patschneider, Y. Gogotsi |
| Pages | 75-80 |
| Number of pages | 6 |
| Volume | 843 |
| State | Published - 2005 |
| Externally published | Yes |
| Event | Surface Engineering 2004 - Fundamentals and Applications - Boston, MA, United States Duration: Nov 30 2004 → Dec 2 2004 |
Other
| Other | Surface Engineering 2004 - Fundamentals and Applications |
|---|---|
| Country | United States |
| City | Boston, MA |
| Period | 11/30/04 → 12/2/04 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
Cite this
UV Raman Scattering Analysis of Indented and Machined 6H-SiC and β-Si 3N 4 Surfaces . / Walter, Jennifer J H; Liang, Mengning; Chen, Xiang Bai; Jang, Jae Il; Bergman, Leah; Patten, John A.; Pharr, George M.; Nemanich, Robert.
Materials Research Society Symposium Proceedings. ed. / S.N. Basu; J.E. Krzanowski; J. Patschneider; Y. Gogotsi. Vol. 843 2005. p. 75-80 T4.10.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - UV Raman Scattering Analysis of Indented and Machined 6H-SiC and β-Si 3N 4 Surfaces
AU - Walter, Jennifer J H
AU - Liang, Mengning
AU - Chen, Xiang Bai
AU - Jang, Jae Il
AU - Bergman, Leah
AU - Patten, John A.
AU - Pharr, George M.
AU - Nemanich, Robert
PY - 2005
Y1 - 2005
N2 - UV Raman scattering is employed as a nondestructive structure sensitive probe to investigate the vibrational properties of the wide bandgap, machined and indented surfaces of 6H-SiC and β-Si 3N 4. In these materials, the short absorption depth of UV light allows for accurate probing of the surface, and the transparency to visible light allows for analysis of the bulk material. The study on 6H-SiC (0001) included measurements of indentations, and of machined circular (0001) wafer edges. The indentation analysis indicates the response of the material to localized pressures. Machined 6H-SiC wafer edges and machined β-Si 3N 4 surfaces indicate a ductile response and ductile material removal for machining at cutting depths on a nm and μm scale. Raman scattering measurements of the ductile surfaces and ductile material removed indicate residual structure changes. The residual surface structures could indicate that a high-pressure phase transformation is the origin of a ductile response on machined brittle materials.
AB - UV Raman scattering is employed as a nondestructive structure sensitive probe to investigate the vibrational properties of the wide bandgap, machined and indented surfaces of 6H-SiC and β-Si 3N 4. In these materials, the short absorption depth of UV light allows for accurate probing of the surface, and the transparency to visible light allows for analysis of the bulk material. The study on 6H-SiC (0001) included measurements of indentations, and of machined circular (0001) wafer edges. The indentation analysis indicates the response of the material to localized pressures. Machined 6H-SiC wafer edges and machined β-Si 3N 4 surfaces indicate a ductile response and ductile material removal for machining at cutting depths on a nm and μm scale. Raman scattering measurements of the ductile surfaces and ductile material removed indicate residual structure changes. The residual surface structures could indicate that a high-pressure phase transformation is the origin of a ductile response on machined brittle materials.
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M3 - Conference contribution
VL - 843
SP - 75
EP - 80
BT - Materials Research Society Symposium Proceedings
A2 - Basu, S.N.
A2 - Krzanowski, J.E.
A2 - Patschneider, J.
A2 - Gogotsi, Y.
ER -