Utilizing polarization induced band bending for InGaN solar cell design

Balakrishnam R. Jampana, Ian T. Ferguson, Robert L. Opila, Christiana Honsberg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Strong polarization effects observed in 111-nitride materials can invert the surface carrier type. The corresponding band bending can be used to design InGaN solar cells. Similar surface inversion was observed in the past with silicon-based Schottky-barrier solar cells, but was limited by Fermi level pinning. The formation of two-dimensional electron gas by polarization fields in 111-nitrides has been reported. Using a similar idea, the growth of a thin AIN capping layer on p-InGaN has resulted in band bending, hence depletion region, under the surface that can be used to separate any generated photo-carriers. Hall measurements at different depths on these structures confirm the inversion of surface carrier type. Solar cells based on this concept have resulted in an open circuit voltage of 2.15 V and short circuit current of 21.8 μA.

Original languageEnglish (US)
Title of host publicationCompound Semiconductors for Energy Applications and Environmental Sustainability
PublisherMaterials Research Society
Pages3-8
Number of pages6
ISBN (Print)9781605111407
DOIs
StatePublished - 2009
Event2009 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 13 2009Apr 17 2009

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1167
ISSN (Print)0272-9172

Other

Other2009 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/13/094/17/09

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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