Utilizing polarization induced band bending for InGaN solar cell design

Balakrishnam R. Jampana, Ian T. Ferguson, Robert L. Opila, Christiana Honsberg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Strong polarization effects observed in 111-nitride materials can invert the surface carrier type. The corresponding band bending can be used to design InGaN solar cells. Similar surface inversion was observed in the past with silicon-based Schottky-barrier solar cells, but was limited by Fermi level pinning. The formation of two-dimensional electron gas by polarization fields in 111-nitrides has been reported. Using a similar idea, the growth of a thin AIN capping layer on p-InGaN has resulted in band bending, hence depletion region, under the surface that can be used to separate any generated photo-carriers. Hall measurements at different depths on these structures confirm the inversion of surface carrier type. Solar cells based on this concept have resulted in an open circuit voltage of 2.15 V and short circuit current of 21.8 μA.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Pages3-8
Number of pages6
Volume1167
StatePublished - 2009
Event2009 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 14 2009Apr 16 2009

Other

Other2009 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/14/094/16/09

Fingerprint

Solar cells
solar cells
Polarization
polarization
Nitrides
nitrides
inversions
Two dimensional electron gas
Silicon
Open circuit voltage
short circuit currents
Fermi level
open circuit voltage
Short circuit currents
electron gas
depletion
silicon

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Jampana, B. R., Ferguson, I. T., Opila, R. L., & Honsberg, C. (2009). Utilizing polarization induced band bending for InGaN solar cell design. In Materials Research Society Symposium Proceedings (Vol. 1167, pp. 3-8)

Utilizing polarization induced band bending for InGaN solar cell design. / Jampana, Balakrishnam R.; Ferguson, Ian T.; Opila, Robert L.; Honsberg, Christiana.

Materials Research Society Symposium Proceedings. Vol. 1167 2009. p. 3-8.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Jampana, BR, Ferguson, IT, Opila, RL & Honsberg, C 2009, Utilizing polarization induced band bending for InGaN solar cell design. in Materials Research Society Symposium Proceedings. vol. 1167, pp. 3-8, 2009 MRS Spring Meeting, San Francisco, CA, United States, 4/14/09.
Jampana BR, Ferguson IT, Opila RL, Honsberg C. Utilizing polarization induced band bending for InGaN solar cell design. In Materials Research Society Symposium Proceedings. Vol. 1167. 2009. p. 3-8
Jampana, Balakrishnam R. ; Ferguson, Ian T. ; Opila, Robert L. ; Honsberg, Christiana. / Utilizing polarization induced band bending for InGaN solar cell design. Materials Research Society Symposium Proceedings. Vol. 1167 2009. pp. 3-8
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