TY - GEN
T1 - Utilizing polarization induced band bending for InGaN solar cell design
AU - Jampana, Balakrishnam R.
AU - Ferguson, Ian T.
AU - Opila, Robert L.
AU - Honsberg, Christiana
PY - 2009
Y1 - 2009
N2 - Strong polarization effects observed in 111-nitride materials can invert the surface carrier type. The corresponding band bending can be used to design InGaN solar cells. Similar surface inversion was observed in the past with silicon-based Schottky-barrier solar cells, but was limited by Fermi level pinning. The formation of two-dimensional electron gas by polarization fields in 111-nitrides has been reported. Using a similar idea, the growth of a thin AIN capping layer on p-InGaN has resulted in band bending, hence depletion region, under the surface that can be used to separate any generated photo-carriers. Hall measurements at different depths on these structures confirm the inversion of surface carrier type. Solar cells based on this concept have resulted in an open circuit voltage of 2.15 V and short circuit current of 21.8 μA.
AB - Strong polarization effects observed in 111-nitride materials can invert the surface carrier type. The corresponding band bending can be used to design InGaN solar cells. Similar surface inversion was observed in the past with silicon-based Schottky-barrier solar cells, but was limited by Fermi level pinning. The formation of two-dimensional electron gas by polarization fields in 111-nitrides has been reported. Using a similar idea, the growth of a thin AIN capping layer on p-InGaN has resulted in band bending, hence depletion region, under the surface that can be used to separate any generated photo-carriers. Hall measurements at different depths on these structures confirm the inversion of surface carrier type. Solar cells based on this concept have resulted in an open circuit voltage of 2.15 V and short circuit current of 21.8 μA.
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U2 - 10.1557/proc-1167-o01-04
DO - 10.1557/proc-1167-o01-04
M3 - Conference contribution
AN - SCOPUS:77950968766
SN - 9781605111407
T3 - Materials Research Society Symposium Proceedings
SP - 3
EP - 8
BT - Compound Semiconductors for Energy Applications and Environmental Sustainability
PB - Materials Research Society
T2 - 2009 MRS Spring Meeting
Y2 - 13 April 2009 through 17 April 2009
ER -