Use of silicon nitride in buried contact solar cells

Bernhard Vogl, Alexander M. Slade, Stephen C. Pritchard, Mark Gross, Christiana Honsberg, Jeffrey E. Cotter, Stuart R. Wenham

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Silicon nitride offers many potential benefits to the family of buried contact fabrication sequences including improved design flexibility and efficiency. The main device structures of the buried contact family comprise the standard buried contact, the simplified buried contact and the double-sided buried contact cells. The physical properties of silicon nitride allow it to be used for surface passivation, as an anti-reflection coating, as a diffusion source material and as a masking dielectric. The use of silicon nitride in each buried contact fabrication sequence is described in this work.

Original languageEnglish (US)
Pages (from-to)17-25
Number of pages9
JournalSolar Energy Materials and Solar Cells
Volume66
Issue number1-4
DOIs
StatePublished - Feb 2001
Externally publishedYes

Fingerprint

Silicon nitride
Solar cells
Fabrication
Antireflection coatings
Passivation
Physical properties
silicon nitride

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

Cite this

Vogl, B., Slade, A. M., Pritchard, S. C., Gross, M., Honsberg, C., Cotter, J. E., & Wenham, S. R. (2001). Use of silicon nitride in buried contact solar cells. Solar Energy Materials and Solar Cells, 66(1-4), 17-25. https://doi.org/10.1016/S0927-0248(00)00153-7

Use of silicon nitride in buried contact solar cells. / Vogl, Bernhard; Slade, Alexander M.; Pritchard, Stephen C.; Gross, Mark; Honsberg, Christiana; Cotter, Jeffrey E.; Wenham, Stuart R.

In: Solar Energy Materials and Solar Cells, Vol. 66, No. 1-4, 02.2001, p. 17-25.

Research output: Contribution to journalArticle

Vogl, B, Slade, AM, Pritchard, SC, Gross, M, Honsberg, C, Cotter, JE & Wenham, SR 2001, 'Use of silicon nitride in buried contact solar cells', Solar Energy Materials and Solar Cells, vol. 66, no. 1-4, pp. 17-25. https://doi.org/10.1016/S0927-0248(00)00153-7
Vogl, Bernhard ; Slade, Alexander M. ; Pritchard, Stephen C. ; Gross, Mark ; Honsberg, Christiana ; Cotter, Jeffrey E. ; Wenham, Stuart R. / Use of silicon nitride in buried contact solar cells. In: Solar Energy Materials and Solar Cells. 2001 ; Vol. 66, No. 1-4. pp. 17-25.
@article{0fa4ff57c1fc4f60a63d9bab7a098da0,
title = "Use of silicon nitride in buried contact solar cells",
abstract = "Silicon nitride offers many potential benefits to the family of buried contact fabrication sequences including improved design flexibility and efficiency. The main device structures of the buried contact family comprise the standard buried contact, the simplified buried contact and the double-sided buried contact cells. The physical properties of silicon nitride allow it to be used for surface passivation, as an anti-reflection coating, as a diffusion source material and as a masking dielectric. The use of silicon nitride in each buried contact fabrication sequence is described in this work.",
author = "Bernhard Vogl and Slade, {Alexander M.} and Pritchard, {Stephen C.} and Mark Gross and Christiana Honsberg and Cotter, {Jeffrey E.} and Wenham, {Stuart R.}",
year = "2001",
month = "2",
doi = "10.1016/S0927-0248(00)00153-7",
language = "English (US)",
volume = "66",
pages = "17--25",
journal = "Solar Energy Materials and Solar Cells",
issn = "0927-0248",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Use of silicon nitride in buried contact solar cells

AU - Vogl, Bernhard

AU - Slade, Alexander M.

AU - Pritchard, Stephen C.

AU - Gross, Mark

AU - Honsberg, Christiana

AU - Cotter, Jeffrey E.

AU - Wenham, Stuart R.

PY - 2001/2

Y1 - 2001/2

N2 - Silicon nitride offers many potential benefits to the family of buried contact fabrication sequences including improved design flexibility and efficiency. The main device structures of the buried contact family comprise the standard buried contact, the simplified buried contact and the double-sided buried contact cells. The physical properties of silicon nitride allow it to be used for surface passivation, as an anti-reflection coating, as a diffusion source material and as a masking dielectric. The use of silicon nitride in each buried contact fabrication sequence is described in this work.

AB - Silicon nitride offers many potential benefits to the family of buried contact fabrication sequences including improved design flexibility and efficiency. The main device structures of the buried contact family comprise the standard buried contact, the simplified buried contact and the double-sided buried contact cells. The physical properties of silicon nitride allow it to be used for surface passivation, as an anti-reflection coating, as a diffusion source material and as a masking dielectric. The use of silicon nitride in each buried contact fabrication sequence is described in this work.

UR - http://www.scopus.com/inward/record.url?scp=0035254339&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035254339&partnerID=8YFLogxK

U2 - 10.1016/S0927-0248(00)00153-7

DO - 10.1016/S0927-0248(00)00153-7

M3 - Article

AN - SCOPUS:0035254339

VL - 66

SP - 17

EP - 25

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

SN - 0927-0248

IS - 1-4

ER -