Use of a scanning cw Kr laser to obtain diffusion-free annealing of B-implanted silicon

A. Gat, J. F. Gibbons, T. J. Magee, J. Peng, Peter Williams, V. Deline, C. A. Evans

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

The use of a continuous scanned Kr ion laser as a tool for annealing of boron-implanted silicon is described. Conditions were found that produce high electrical activity and crystallinity of the implanted layer without redistribution of the boron from the as-implanted profile.

Original languageEnglish (US)
Pages (from-to)389-391
Number of pages3
JournalApplied Physics Letters
Volume33
Issue number5
DOIs
StatePublished - 1978
Externally publishedYes

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boron
annealing
scanning
silicon
lasers
crystallinity
profiles
ions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Gat, A., Gibbons, J. F., Magee, T. J., Peng, J., Williams, P., Deline, V., & Evans, C. A. (1978). Use of a scanning cw Kr laser to obtain diffusion-free annealing of B-implanted silicon. Applied Physics Letters, 33(5), 389-391. https://doi.org/10.1063/1.90386

Use of a scanning cw Kr laser to obtain diffusion-free annealing of B-implanted silicon. / Gat, A.; Gibbons, J. F.; Magee, T. J.; Peng, J.; Williams, Peter; Deline, V.; Evans, C. A.

In: Applied Physics Letters, Vol. 33, No. 5, 1978, p. 389-391.

Research output: Contribution to journalArticle

Gat, A, Gibbons, JF, Magee, TJ, Peng, J, Williams, P, Deline, V & Evans, CA 1978, 'Use of a scanning cw Kr laser to obtain diffusion-free annealing of B-implanted silicon', Applied Physics Letters, vol. 33, no. 5, pp. 389-391. https://doi.org/10.1063/1.90386
Gat, A. ; Gibbons, J. F. ; Magee, T. J. ; Peng, J. ; Williams, Peter ; Deline, V. ; Evans, C. A. / Use of a scanning cw Kr laser to obtain diffusion-free annealing of B-implanted silicon. In: Applied Physics Letters. 1978 ; Vol. 33, No. 5. pp. 389-391.
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