Abstract
The use of a continuous scanned Kr ion laser as a tool for annealing of boron-implanted silicon is described. Conditions were found that produce high electrical activity and crystallinity of the implanted layer without redistribution of the boron from the as-implanted profile.
Original language | English (US) |
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Pages (from-to) | 389-391 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 33 |
Issue number | 5 |
DOIs | |
State | Published - 1978 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)