Use of a scanning cw Kr laser to obtain diffusion-free annealing of B-implanted silicon

A. Gat, J. F. Gibbons, T. J. Magee, J. Peng, P. Williams, V. Deline, C. A. Evans

Research output: Contribution to journalArticle

38 Scopus citations

Abstract

The use of a continuous scanned Kr ion laser as a tool for annealing of boron-implanted silicon is described. Conditions were found that produce high electrical activity and crystallinity of the implanted layer without redistribution of the boron from the as-implanted profile.

Original languageEnglish (US)
Pages (from-to)389-391
Number of pages3
JournalApplied Physics Letters
Volume33
Issue number5
DOIs
StatePublished - Dec 1 1978
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Use of a scanning cw Kr laser to obtain diffusion-free annealing of B-implanted silicon'. Together they form a unique fingerprint.

  • Cite this

    Gat, A., Gibbons, J. F., Magee, T. J., Peng, J., Williams, P., Deline, V., & Evans, C. A. (1978). Use of a scanning cw Kr laser to obtain diffusion-free annealing of B-implanted silicon. Applied Physics Letters, 33(5), 389-391. https://doi.org/10.1063/1.90386