InAs quantum dots grown on GaAsSb buffer layers with varying Sb content have been studied. Atomic force microscopy results show that the dot size is reduced as the Sb content increases with a concomitant increase in number density. Analysis of the size distribution indicates that the spread of dot sizes narrows with increasing Sb content. This is confirmed by photoluminescence measurements showing a significant narrowing of the dot emission peak for a GaAs0.77 Sb0.23 buffer compared to a GaAs buffer. The results are attributed to the strained buffer reducing interactions between dots and the Sb acting as a surfactant.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)