Use of a GaAsSb buffer layer for the formation of small, uniform, and dense InAs quantum dots

Keun Yong Ban, Stephen P. Bremner, Guangming Liu, Som N. Dahal, Patricia C. Dippo, Andrew G. Norman, Christiana Honsberg

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Abstract

InAs quantum dots grown on GaAsSb buffer layers with varying Sb content have been studied. Atomic force microscopy results show that the dot size is reduced as the Sb content increases with a concomitant increase in number density. Analysis of the size distribution indicates that the spread of dot sizes narrows with increasing Sb content. This is confirmed by photoluminescence measurements showing a significant narrowing of the dot emission peak for a GaAs0.77 Sb0.23 buffer compared to a GaAs buffer. The results are attributed to the strained buffer reducing interactions between dots and the Sb acting as a surfactant.

Original languageEnglish (US)
Article number183101
JournalApplied Physics Letters
Volume96
Issue number18
DOIs
StatePublished - Jun 2 2010

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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