Use of a GaAsSb buffer layer for the formation of small, uniform, and dense InAs quantum dots

Keun Yong Ban; Stephen P. Bremner; Guangming Liu; Som N. Dahal; Patricia C. Dippo; Andrew G. Norman; Christiana Honsberg

doi:10.1063/1.3409691

Use of a GaAsSb buffer layer for the formation of small, uniform, and dense InAs quantum dots

Keun Yong Ban, Stephen P. Bremner, Guangming Liu, Som N. Dahal, Patricia C. Dippo, Andrew G. Norman, Christiana Honsberg

Research output: Contribution to journal › Article › peer-review

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Abstract

InAs quantum dots grown on GaAsSb buffer layers with varying Sb content have been studied. Atomic force microscopy results show that the dot size is reduced as the Sb content increases with a concomitant increase in number density. Analysis of the size distribution indicates that the spread of dot sizes narrows with increasing Sb content. This is confirmed by photoluminescence measurements showing a significant narrowing of the dot emission peak for a GaAs_0.77 Sb_0.23 buffer compared to a GaAs buffer. The results are attributed to the strained buffer reducing interactions between dots and the Sb acting as a surfactant.

Original language	English (US)
Article number	183101
Journal	Applied Physics Letters
Volume	96
Issue number	18
DOIs	https://doi.org/10.1063/1.3409691
State	Published - 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Use of a GaAsSb buffer layer for the formation of small, uniform, and dense InAs quantum dots",

abstract = "InAs quantum dots grown on GaAsSb buffer layers with varying Sb content have been studied. Atomic force microscopy results show that the dot size is reduced as the Sb content increases with a concomitant increase in number density. Analysis of the size distribution indicates that the spread of dot sizes narrows with increasing Sb content. This is confirmed by photoluminescence measurements showing a significant narrowing of the dot emission peak for a GaAs0.77 Sb0.23 buffer compared to a GaAs buffer. The results are attributed to the strained buffer reducing interactions between dots and the Sb acting as a surfactant.",

author = "Ban, {Keun Yong} and Bremner, {Stephen P.} and Guangming Liu and Dahal, {Som N.} and Dippo, {Patricia C.} and Norman, {Andrew G.} and Christiana Honsberg",

note = "Funding Information: This work was partially supported by the U.S. Department of Energy through EPSCoR Contract No. DE-FG02-07ER46359. ",

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doi = "10.1063/1.3409691",

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T1 - Use of a GaAsSb buffer layer for the formation of small, uniform, and dense InAs quantum dots

AU - Ban, Keun Yong

AU - Bremner, Stephen P.

AU - Liu, Guangming

AU - Dahal, Som N.

AU - Dippo, Patricia C.

AU - Norman, Andrew G.

AU - Honsberg, Christiana

N1 - Funding Information: This work was partially supported by the U.S. Department of Energy through EPSCoR Contract No. DE-FG02-07ER46359.

PY - 2010

Y1 - 2010

N2 - InAs quantum dots grown on GaAsSb buffer layers with varying Sb content have been studied. Atomic force microscopy results show that the dot size is reduced as the Sb content increases with a concomitant increase in number density. Analysis of the size distribution indicates that the spread of dot sizes narrows with increasing Sb content. This is confirmed by photoluminescence measurements showing a significant narrowing of the dot emission peak for a GaAs0.77 Sb0.23 buffer compared to a GaAs buffer. The results are attributed to the strained buffer reducing interactions between dots and the Sb acting as a surfactant.

AB - InAs quantum dots grown on GaAsSb buffer layers with varying Sb content have been studied. Atomic force microscopy results show that the dot size is reduced as the Sb content increases with a concomitant increase in number density. Analysis of the size distribution indicates that the spread of dot sizes narrows with increasing Sb content. This is confirmed by photoluminescence measurements showing a significant narrowing of the dot emission peak for a GaAs0.77 Sb0.23 buffer compared to a GaAs buffer. The results are attributed to the strained buffer reducing interactions between dots and the Sb acting as a surfactant.

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Use of a GaAsSb buffer layer for the formation of small, uniform, and dense InAs quantum dots

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