Updated contour plots for the design of P emitters of silicon solar cells

Andres Cuevas, Ramon Merchan, Jose Carlos Ramos, Richard King

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The contours of constant dark saturation current density, photogenerated current density lost by recombination, and sheet resistance, as a function of the surface dopant density and the thickness of the emitter are given for boron-doped regions, with application to silicon solar cells. Although similar calculations and graphs have already been published, the present ones have been generated using an updated value for the intrinsic carrier density. Contour plots of the emitter-limited ideal solar cell efficiency are also included for the common case of a combined passivated/metal contacted surface. The latter plots show the main features of the optimum emitters.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Editors Anon
PublisherPubl by IEEE
Pages309-316
Number of pages8
ISBN (Print)0780312201
StatePublished - 1993
Externally publishedYes
EventProceedings of the 23rd IEEE Photovoltaic Specialists Conference - Louisville, KY, USA
Duration: May 10 1993May 14 1993

Other

OtherProceedings of the 23rd IEEE Photovoltaic Specialists Conference
CityLouisville, KY, USA
Period5/10/935/14/93

Fingerprint

Silicon solar cells
emitters
Current density
solar cells
plots
Sheet resistance
current density
Carrier concentration
Boron
Solar cells
Doping (additives)
metal surfaces
boron
Metals
saturation

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics

Cite this

Cuevas, A., Merchan, R., Ramos, J. C., & King, R. (1993). Updated contour plots for the design of P emitters of silicon solar cells. In Anon (Ed.), Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 309-316). Publ by IEEE.

Updated contour plots for the design of P emitters of silicon solar cells. / Cuevas, Andres; Merchan, Ramon; Ramos, Jose Carlos; King, Richard.

Conference Record of the IEEE Photovoltaic Specialists Conference. ed. / Anon. Publ by IEEE, 1993. p. 309-316.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Cuevas, A, Merchan, R, Ramos, JC & King, R 1993, Updated contour plots for the design of P emitters of silicon solar cells. in Anon (ed.), Conference Record of the IEEE Photovoltaic Specialists Conference. Publ by IEEE, pp. 309-316, Proceedings of the 23rd IEEE Photovoltaic Specialists Conference, Louisville, KY, USA, 5/10/93.
Cuevas A, Merchan R, Ramos JC, King R. Updated contour plots for the design of P emitters of silicon solar cells. In Anon, editor, Conference Record of the IEEE Photovoltaic Specialists Conference. Publ by IEEE. 1993. p. 309-316
Cuevas, Andres ; Merchan, Ramon ; Ramos, Jose Carlos ; King, Richard. / Updated contour plots for the design of P emitters of silicon solar cells. Conference Record of the IEEE Photovoltaic Specialists Conference. editor / Anon. Publ by IEEE, 1993. pp. 309-316
@inproceedings{5743ebc4b0a3461198f02a09cea205f2,
title = "Updated contour plots for the design of P emitters of silicon solar cells",
abstract = "The contours of constant dark saturation current density, photogenerated current density lost by recombination, and sheet resistance, as a function of the surface dopant density and the thickness of the emitter are given for boron-doped regions, with application to silicon solar cells. Although similar calculations and graphs have already been published, the present ones have been generated using an updated value for the intrinsic carrier density. Contour plots of the emitter-limited ideal solar cell efficiency are also included for the common case of a combined passivated/metal contacted surface. The latter plots show the main features of the optimum emitters.",
author = "Andres Cuevas and Ramon Merchan and Ramos, {Jose Carlos} and Richard King",
year = "1993",
language = "English (US)",
isbn = "0780312201",
pages = "309--316",
editor = "Anon",
booktitle = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Publ by IEEE",

}

TY - GEN

T1 - Updated contour plots for the design of P emitters of silicon solar cells

AU - Cuevas, Andres

AU - Merchan, Ramon

AU - Ramos, Jose Carlos

AU - King, Richard

PY - 1993

Y1 - 1993

N2 - The contours of constant dark saturation current density, photogenerated current density lost by recombination, and sheet resistance, as a function of the surface dopant density and the thickness of the emitter are given for boron-doped regions, with application to silicon solar cells. Although similar calculations and graphs have already been published, the present ones have been generated using an updated value for the intrinsic carrier density. Contour plots of the emitter-limited ideal solar cell efficiency are also included for the common case of a combined passivated/metal contacted surface. The latter plots show the main features of the optimum emitters.

AB - The contours of constant dark saturation current density, photogenerated current density lost by recombination, and sheet resistance, as a function of the surface dopant density and the thickness of the emitter are given for boron-doped regions, with application to silicon solar cells. Although similar calculations and graphs have already been published, the present ones have been generated using an updated value for the intrinsic carrier density. Contour plots of the emitter-limited ideal solar cell efficiency are also included for the common case of a combined passivated/metal contacted surface. The latter plots show the main features of the optimum emitters.

UR - http://www.scopus.com/inward/record.url?scp=0027845045&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027845045&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0027845045

SN - 0780312201

SP - 309

EP - 316

BT - Conference Record of the IEEE Photovoltaic Specialists Conference

A2 - Anon, null

PB - Publ by IEEE

ER -