Updated contour plots for the design of P emitters of silicon solar cells

Andres Cuevas, Ramon Merchan, Jose Carlos Ramos, Richard R. King

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The contours of constant dark saturation current density, photogenerated current density lost by recombination, and sheet resistance, as a function of the surface dopant density and the thickness of the emitter are given for boron-doped regions, with application to silicon solar cells. Although similar calculations and graphs have already been published, the present ones have been generated using an updated value for the intrinsic carrier density. Contour plots of the emitter-limited ideal solar cell efficiency are also included for the common case of a combined passivated/metal contacted surface. The latter plots show the main features of the optimum emitters.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Editors Anon
PublisherPubl by IEEE
Pages309-316
Number of pages8
ISBN (Print)0780312201
StatePublished - Dec 1 1993
Externally publishedYes
EventProceedings of the 23rd IEEE Photovoltaic Specialists Conference - Louisville, KY, USA
Duration: May 10 1993May 14 1993

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

OtherProceedings of the 23rd IEEE Photovoltaic Specialists Conference
CityLouisville, KY, USA
Period5/10/935/14/93

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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