@inproceedings{5743ebc4b0a3461198f02a09cea205f2,
title = "Updated contour plots for the design of P emitters of silicon solar cells",
abstract = "The contours of constant dark saturation current density, photogenerated current density lost by recombination, and sheet resistance, as a function of the surface dopant density and the thickness of the emitter are given for boron-doped regions, with application to silicon solar cells. Although similar calculations and graphs have already been published, the present ones have been generated using an updated value for the intrinsic carrier density. Contour plots of the emitter-limited ideal solar cell efficiency are also included for the common case of a combined passivated/metal contacted surface. The latter plots show the main features of the optimum emitters.",
author = "Andres Cuevas and Ramon Merchan and Ramos, {Jose Carlos} and King, {Richard R.}",
year = "1993",
month = dec,
day = "1",
language = "English (US)",
isbn = "0780312201",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Publ by IEEE",
pages = "309--316",
editor = "Anon",
booktitle = "Conference Record of the IEEE Photovoltaic Specialists Conference",
note = "Proceedings of the 23rd IEEE Photovoltaic Specialists Conference ; Conference date: 10-05-1993 Through 14-05-1993",
}