Unraveling of bulk and surface behavior in high-quality c-Si material via TIDLS

Simone Bernardini, Tine U. Narland, Gianluca Coletti, Laura Ding, Adrienne L. Blum, Mariana Bertoni

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The current trend in silicon photovoltaics towards high-quality thin mono-crystalline silicon substrates makes the accurate representation of surface recombination of utmost importance. It has been shown by several authors that an effective way to study detrimental defects in silicon wafers is by means of temperature and injection dependent lifetime spectroscopy (TIDLS) coupled with the Shockley-Read-Hall recombination model. Given its high sensitivity this is an excellent technique to study high lifetime substrates. However, a thorough evaluation of the surface recombination velocity (SRV) dependence on injection level and temperature is vital to the extrapolation of meaningful results regarding the defects contained in the bulk of the material. Here, we present a TIDLS study of a-Si:H(i), a-Si:H(n) and a-Si:H(p) deposited on «-type low-resistivity FZ substrates. We evaluate the impact of every dielectric layer on the total SRV temperature- and injection dependence while demonstrating its fundamental role in τeff behavior of high-quality Si substrate.

Original languageEnglish (US)
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-5
Number of pages5
ISBN (Electronic)9781509056057
DOIs
StatePublished - May 25 2018
Event44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
Duration: Jun 25 2017Jun 30 2017

Other

Other44th IEEE Photovoltaic Specialist Conference, PVSC 2017
CountryUnited States
CityWashington
Period6/25/176/30/17

Keywords

  • Amorphous silicon
  • Passivation
  • Photoconductance
  • Silicon
  • TIDLS

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Bernardini, S., Narland, T. U., Coletti, G., Ding, L., Blum, A. L., & Bertoni, M. (2018). Unraveling of bulk and surface behavior in high-quality c-Si material via TIDLS. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1-5). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366670