@inproceedings{4e28d23983fa4a55a38278bcf70453be,
title = "Unraveling of bulk and surface behavior in high-quality c-Si material via TIDLS",
abstract = "The current trend in silicon photovoltaics towards high-quality thin mono-crystalline silicon substrates makes the accurate representation of surface recombination of utmost importance. It has been shown by several authors that an effective way to study detrimental defects in silicon wafers is by means of temperature and injection dependent lifetime spectroscopy (TIDLS) coupled with the Shockley-Read-Hall recombination model. Given its high sensitivity this is an excellent technique to study high lifetime substrates. However, a thorough evaluation of the surface recombination velocity (SRV) dependence on injection level and temperature is vital to the extrapolation of meaningful results regarding the defects contained in the bulk of the material. Here, we present a TIDLS study of a-Si:H(i), a-Si:H(n) and a-Si:H(p) deposited on «-type low-resistivity FZ substrates. We evaluate the impact of every dielectric layer on the total SRV temperature- and injection dependence while demonstrating its fundamental role in τeff behavior of high-quality Si substrate.",
keywords = "Amorphous silicon, Passivation, Photoconductance, Silicon, TIDLS",
author = "Simone Bernardini and Narland, {Tine U.} and Gianluca Coletti and Laura Ding and Blum, {Adrienne L.} and Mariana Bertoni",
note = "Funding Information: support and fruitful discussions; Dr. M. Boccard, S. Herasimenka for their help with samples preparation. This material is based upon work primarily supported by the Engineering Research Center Program of the National Science Foundation and the Office Energy Efficiency and Renewable Energy of the Department of Energy under NSF Cooperative Agreement No. EEC – 1041895. Any opinions, findings and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect those of the National Science Foundation or Department of Energy. Publisher Copyright: {\textcopyright} 2017 IEEE.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",
year = "2017",
doi = "10.1109/PVSC.2017.8366670",
language = "English (US)",
series = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "2031--2034",
booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",
}