Unraveling of bulk and surface behavior in high-quality c-Si material via TIDLS

Simone Bernardini, Tine U. Norland, Gianluca Coletti, Laura Ding, Adrienne L. Blum, Mariana Bertoni

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The current trend in silicon photovoltaics towards high-quality thin mono-crystalline silicon substrates makes the accurate representation of surface recombination of utmost importance. It has been shown by several authors that an effective way to study detrimental defects in silicon wafers is by means of temperature and injection dependent lifetime spectroscopy (TIDLS) coupled with the Shockley-Read-Hall recombination model. Given its high sensitivity this is an excellent technique to study high lifetime substrates. However, a thorough evaluation of the surface recombination velocity (SRV) dependence on injection level and temperature is vital to the extrapolation of meaningful results regarding the defects contained in the bulk of the material. Here, we present a TIDLS study of a-Si:H(i), a-Si:H(n) and a-Si:H(p) deposited on n-type low-resistivity FZ substrates. We evaluate the impact of every dielectric layer on the total SRV temperature- and injection dependence while demonstrating its fundamental role in τeff behavior of high-quality Si substrate.

Original languageEnglish (US)
Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2863-2867
Number of pages5
Volume2016-November
ISBN (Electronic)9781509027248
DOIs
StatePublished - Nov 18 2016
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: Jun 5 2016Jun 10 2016

Other

Other43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
CountryUnited States
CityPortland
Period6/5/166/10/16

Keywords

  • amorphous silicon
  • passivation
  • photoconductance
  • silicon
  • TIDLS

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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    Bernardini, S., Norland, T. U., Coletti, G., Ding, L., Blum, A. L., & Bertoni, M. (2016). Unraveling of bulk and surface behavior in high-quality c-Si material via TIDLS. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (Vol. 2016-November, pp. 2863-2867). [7750177] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7750177