@inproceedings{bc141f2c8ba54a898a85ec27a08cf6c8,
title = "Unraveling of bulk and surface behavior in high-quality c-Si material via TIDLS",
abstract = "The current trend in silicon photovoltaics towards high-quality thin mono-crystalline silicon substrates makes the accurate representation of surface recombination of utmost importance. It has been shown by several authors that an effective way to study detrimental defects in silicon wafers is by means of temperature and injection dependent lifetime spectroscopy (TIDLS) coupled with the Shockley-Read-Hall recombination model. Given its high sensitivity this is an excellent technique to study high lifetime substrates. However, a thorough evaluation of the surface recombination velocity (SRV) dependence on injection level and temperature is vital to the extrapolation of meaningful results regarding the defects contained in the bulk of the material. Here, we present a TIDLS study of a-Si:H(i), a-Si:H(n) and a-Si:H(p) deposited on n-type low-resistivity FZ substrates. We evaluate the impact of every dielectric layer on the total SRV temperature- and injection dependence while demonstrating its fundamental role in τeff behavior of high-quality Si substrate.",
keywords = "TIDLS, amorphous silicon, passivation, photoconductance, silicon",
author = "Simone Bernardini and Norland, {Tine U.} and Gianluca Coletti and Laura Ding and Blum, {Adrienne L.} and Mariana Bertoni",
note = "Funding Information: This material is based upon work primarily supported by the Engineering Research Center Program of the National Science Foundation and the Office Energy Efficiency and Renewable Energy of the Department of Energy under NSF Cooperative Agreement No. EEC - 1041895. Any opinions, findings and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect those of the National Science Foundation or Department of Energy Publisher Copyright: {\textcopyright} 2016 IEEE.; 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",
year = "2016",
month = nov,
day = "18",
doi = "10.1109/PVSC.2016.7750177",
language = "English (US)",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "2863--2867",
booktitle = "2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016",
}