Universal and solution-processable precursor to bismuth chalcogenide thermoelectrics

Robert Y. Wang, Joseph P. Feser, Xun Gu, Kin Man Yu, Rachel A. Segalman, Arun Majumdar, Delia J. Milliron, Jeffrey J. Urban

Research output: Contribution to journalArticle

44 Scopus citations

Abstract

A solution processing technique that could enable low-cost production of thermoelectric devices with efficiencies comparable to conventionally fabricated devices, was studied. A bismuth sulfide precursor was created by reacting Bi2S3 sulfur, and distilled hydrazine. Thin films for characterization and transport measurements were made by spin-coating the precursors onto substrates. Bi2Se3 films were made by annealing the precursor at 250°C for 30 mm. To promote incorporation of tellurium into the compounds, the precursors for Bi,Te, Bi2Te 2Se, and Bi2TeSe2 were annealed at 400°C for 30 mm. Rutherford backscattering spectrometry and energy dispersive X-ray spectroscopy confirm the presence of the indicated elements and the absence of residual sulfur. All compounds exhibit a negative sign of thermopower, which indicates that these films are n-type semiconductors.

Original languageEnglish (US)
Pages (from-to)1943-1945
Number of pages3
JournalChemistry of Materials
Volume22
Issue number6
DOIs
StatePublished - Mar 23 2010
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

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    Wang, R. Y., Feser, J. P., Gu, X., Yu, K. M., Segalman, R. A., Majumdar, A., Milliron, D. J., & Urban, J. J. (2010). Universal and solution-processable precursor to bismuth chalcogenide thermoelectrics. Chemistry of Materials, 22(6), 1943-1945. https://doi.org/10.1021/cm903769q