Unifying model for step coverage in deposition processes for multilevel interconnection

Gregory Raupp, Timothy S. Cale

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

A molecular transport-reaction model based on a pseudosteady approximation of the Boltzmann equation provides a unifying understanding of step coverage phenomena observed for the a spectrum of deposition processes. The model suggests that for all chemically based processes, the reactivity of precursors or intermediates, as characterized by their reactive sticking coefficients, controls step coverage. Classical reaction rate expressions may be used to estimate reactive sticking coefficient dependences on flux; these dependences are directly incorporated in the model to determine the spatial and temporal evolution of the sticking coefficients as the feature fill proceeds. For all but first-order reactions, use of a single value for the sticking coefficient is not warranted. The model is formulated in such a way that physical properties of the films (i.e., density) can be estimated if the property dependence on precursor incident angle is known.

Original languageEnglish (US)
Title of host publicationProceedings - International IEEE VLSI Multilevel Interconnection Conference
Place of PublicationPiscataway, NJ, United States
PublisherPubl by IEEE
Pages212-218
Number of pages7
StatePublished - 1990
Event1990 Proceedings of the Seventh International IEEE VLSI Multilevel Interconnection Conference - Santa Clara, CA, USA
Duration: Jun 12 1990Jun 13 1990

Other

Other1990 Proceedings of the Seventh International IEEE VLSI Multilevel Interconnection Conference
CitySanta Clara, CA, USA
Period6/12/906/13/90

ASJC Scopus subject areas

  • Engineering(all)

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