Uniform metal-assisted chemical etching and the stability of catalysts

Liyi Li, Colin M. Holmes, Jinho Hah, Owen J. Hildreth, Ching P. Wong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Recently, metal-assisted chemical etching (MaCE) has been demonstrated as a promising technology in fabrication of uniform high-aspect-ratio (HAR) micro- and nanostructures on silicon substrates. In this work, MaCE experiments on 2 um-wide line patterns were conducted using Au or Ag as catalysts. The performance of the two catalysts show sharp contrast. In MaCE with Au, a HAR trench was formed with uniform geometry and vertical sidewall. In MaCE with Ag, shallow and tapered etching profiles were observed, which resembled the results from isotropic etching. The sidewall tapering phenomena can be explained by the dissolution and re-deposition of the Ag catalyst in the etchant solution. The existence of Ag that was redeposited on the sidewall was further confirmed by energy dispersive spectrum. Also, etchant composition is found to play a profound role in influencing the etching profile by the Ag catalysts.

Original languageEnglish (US)
Title of host publicationMetal-Assisted Chemical Etching of Silicon and Other Semiconductors
PublisherMaterials Research Society
Pages1-8
Number of pages8
Volume1801
ISBN (Electronic)9781510826540
DOIs
StatePublished - 2015
Event2015 MRS Spring Meeting - San Francisco, United States
Duration: Apr 6 2015Apr 10 2015

Other

Other2015 MRS Spring Meeting
CountryUnited States
CitySan Francisco
Period4/6/154/10/15

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Li, L., Holmes, C. M., Hah, J., Hildreth, O. J., & Wong, C. P. (2015). Uniform metal-assisted chemical etching and the stability of catalysts. In Metal-Assisted Chemical Etching of Silicon and Other Semiconductors (Vol. 1801, pp. 1-8). Materials Research Society. https://doi.org/10.1557/opl.2015.574