Abstract
Recently, metal-assisted chemical etching (MaCE) has been demonstrated as a promising technology in fabrication of uniform high-aspect-ratio (HAR) micro- and nanostructures on silicon substrates. In this work, MaCE experiments on 2 um-wide line patterns were conducted using Au or Ag as catalysts. The performance of the two catalysts show sharp contrast. In MaCE with Au, a HAR trench was formed with uniform geometry and vertical sidewall. In MaCE with Ag, shallow and tapered etching profiles were observed, which resembled the results from isotropic etching. The sidewall tapering phenomena can be explained by the dissolution and re-deposition of the Ag catalyst in the etchant solution. The existence of Ag that was redeposited on the sidewall was further confirmed by energy dispersive spectrum. Also, etchant composition is found to play a profound role in influencing the etching profile by the Ag catalysts.
| Original language | English (US) |
|---|---|
| Title of host publication | Metal-Assisted Chemical Etching of Silicon and Other Semiconductors |
| Publisher | Materials Research Society |
| Pages | 1-8 |
| Number of pages | 8 |
| Volume | 1801 |
| ISBN (Electronic) | 9781510826540 |
| DOIs | |
| State | Published - 2015 |
| Event | 2015 MRS Spring Meeting - San Francisco, United States Duration: Apr 6 2015 → Apr 10 2015 |
Other
| Other | 2015 MRS Spring Meeting |
|---|---|
| Country | United States |
| City | San Francisco |
| Period | 4/6/15 → 4/10/15 |
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ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
Uniform metal-assisted chemical etching and the stability of catalysts. / Li, Liyi; Holmes, Colin M.; Hah, Jinho; Hildreth, Owen J.; Wong, Ching P.
Metal-Assisted Chemical Etching of Silicon and Other Semiconductors. Vol. 1801 Materials Research Society, 2015. p. 1-8.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Uniform metal-assisted chemical etching and the stability of catalysts
AU - Li, Liyi
AU - Holmes, Colin M.
AU - Hah, Jinho
AU - Hildreth, Owen J.
AU - Wong, Ching P.
PY - 2015
Y1 - 2015
N2 - Recently, metal-assisted chemical etching (MaCE) has been demonstrated as a promising technology in fabrication of uniform high-aspect-ratio (HAR) micro- and nanostructures on silicon substrates. In this work, MaCE experiments on 2 um-wide line patterns were conducted using Au or Ag as catalysts. The performance of the two catalysts show sharp contrast. In MaCE with Au, a HAR trench was formed with uniform geometry and vertical sidewall. In MaCE with Ag, shallow and tapered etching profiles were observed, which resembled the results from isotropic etching. The sidewall tapering phenomena can be explained by the dissolution and re-deposition of the Ag catalyst in the etchant solution. The existence of Ag that was redeposited on the sidewall was further confirmed by energy dispersive spectrum. Also, etchant composition is found to play a profound role in influencing the etching profile by the Ag catalysts.
AB - Recently, metal-assisted chemical etching (MaCE) has been demonstrated as a promising technology in fabrication of uniform high-aspect-ratio (HAR) micro- and nanostructures on silicon substrates. In this work, MaCE experiments on 2 um-wide line patterns were conducted using Au or Ag as catalysts. The performance of the two catalysts show sharp contrast. In MaCE with Au, a HAR trench was formed with uniform geometry and vertical sidewall. In MaCE with Ag, shallow and tapered etching profiles were observed, which resembled the results from isotropic etching. The sidewall tapering phenomena can be explained by the dissolution and re-deposition of the Ag catalyst in the etchant solution. The existence of Ag that was redeposited on the sidewall was further confirmed by energy dispersive spectrum. Also, etchant composition is found to play a profound role in influencing the etching profile by the Ag catalysts.
UR - http://www.scopus.com/inward/record.url?scp=84985991137&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84985991137&partnerID=8YFLogxK
U2 - 10.1557/opl.2015.574
DO - 10.1557/opl.2015.574
M3 - Conference contribution
AN - SCOPUS:84985991137
VL - 1801
SP - 1
EP - 8
BT - Metal-Assisted Chemical Etching of Silicon and Other Semiconductors
PB - Materials Research Society
ER -