Abstract
Recently, metal-assisted chemical etching (MaCE) has been demonstrated as a promising technology in fabrication of uniform high-aspect-ratio (HAR) micro- and nanostructures on silicon substrates. In this work, MaCE experiments on 2 um-wide line patterns were conducted using Au or Ag as catalysts. The performance of the two catalysts show sharp contrast. In MaCE with Au, a HAR trench was formed with uniform geometry and vertical sidewall. In MaCE with Ag, shallow and tapered etching profiles were observed, which resembled the results from isotropic etching. The sidewall tapering phenomena can be explained by the dissolution and re-deposition of the Ag catalyst in the etchant solution. The existence of Ag that was redeposited on the sidewall was further confirmed by energy dispersive spectrum. Also, etchant composition is found to play a profound role in influencing the etching profile by the Ag catalysts.
Original language | English (US) |
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Title of host publication | Metal-Assisted Chemical Etching of Silicon and Other Semiconductors |
Publisher | Materials Research Society |
Pages | 1-8 |
Number of pages | 8 |
Volume | 1801 |
ISBN (Electronic) | 9781510826540 |
DOIs | |
State | Published - 2015 |
Event | 2015 MRS Spring Meeting - San Francisco, United States Duration: Apr 6 2015 → Apr 10 2015 |
Other
Other | 2015 MRS Spring Meeting |
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Country | United States |
City | San Francisco |
Period | 4/6/15 → 4/10/15 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering