Understanding Transport in Heterojunction Contact Stacks by Simulating Silicon Heterojunction TLM Structures

Pradyumna Muralidharan; Ashling Mehdi Leilaeioun; William Weigand; Zachary Holman; Stephen Goodnick; Dragica Vasileska

doi:10.1109/PVSC.2018.8548166

Understanding Transport in Heterojunction Contact Stacks by Simulating Silicon Heterojunction TLM Structures

Pradyumna Muralidharan, Ashling Mehdi Leilaeioun, William Weigand, Zachary Holman, Stephen Goodnick, Dragica Vasileska

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Most modern silicon heterojunction solar cells use electron/hole-selective contacts in order to efficiently collect photogenerated carriers. Carrier-selective contacts are important as they block minority carriers and optimize the collection of majority carriers. However, these contact stacks contribute to the resistive loss of the solar cell which is detrimental to the overall device performance. In this paper we analyze the origin of these losses in a hole-collecting contact stack which consists of aSi:H(i)/a-Si:H(p)/ITO(n)/Ag through experiments and simulations. We analyze how the contact resistivity of the structure varies with changes in the intrinsic amorphous silicon layer thickness, temperature and ITO(n) doping. The transmission line method was used to characterize the resistive losses of the contact stack. The simulations were conducted using a commercial device simulator SILVACO. We include the ITO as a n-type semiconductor layer in our simulations.

Original language	English (US)
Title of host publication	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2166-2169
Number of pages	4
ISBN (Electronic)	9781538685297
DOIs	https://doi.org/10.1109/PVSC.2018.8548166
State	Published - Nov 26 2018
Event	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: Jun 10 2018 → Jun 15 2018

Other

Other	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country	United States
City	Waikoloa Village
Period	6/10/18 → 6/15/18

Keywords

amorphous silicon
device modeling
heterojunctions
silicon
simulation
solar cells
TLM

ASJC Scopus subject areas

Energy Engineering and Power Technology
Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2018.8548166

Fingerprint Dive into the research topics of 'Understanding Transport in Heterojunction Contact Stacks by Simulating Silicon Heterojunction TLM Structures'. Together they form a unique fingerprint.

Cite this

Muralidharan, P., Leilaeioun, A. M., Weigand, W., Holman, Z., Goodnick, S., & Vasileska, D. (2018). Understanding Transport in Heterojunction Contact Stacks by Simulating Silicon Heterojunction TLM Structures. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC (pp. 2166-2169). [8548166] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2018.8548166

Understanding Transport in Heterojunction Contact Stacks by Simulating Silicon Heterojunction TLM Structures. / Muralidharan, Pradyumna; Leilaeioun, Ashling Mehdi; Weigand, William; Holman, Zachary ; Goodnick, Stephen ; Vasileska, Dragica.

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. p. 2166-2169 8548166.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Muralidharan, P, Leilaeioun, AM, Weigand, W, Holman, Z , Goodnick, S & Vasileska, D 2018, Understanding Transport in Heterojunction Contact Stacks by Simulating Silicon Heterojunction TLM Structures. in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC., 8548166, Institute of Electrical and Electronics Engineers Inc., pp. 2166-2169, 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States, 6/10/18. https://doi.org/10.1109/PVSC.2018.8548166

Muralidharan P, Leilaeioun AM, Weigand W, Holman Z , Goodnick S , Vasileska D. Understanding Transport in Heterojunction Contact Stacks by Simulating Silicon Heterojunction TLM Structures. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc. 2018. p. 2166-2169. 8548166 https://doi.org/10.1109/PVSC.2018.8548166

Muralidharan, Pradyumna ; Leilaeioun, Ashling Mehdi ; Weigand, William ; Holman, Zachary ; Goodnick, Stephen ; Vasileska, Dragica. / Understanding Transport in Heterojunction Contact Stacks by Simulating Silicon Heterojunction TLM Structures. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 2166-2169

@inproceedings{c46114c96ace4159abf760c5572a5300,

title = "Understanding Transport in Heterojunction Contact Stacks by Simulating Silicon Heterojunction TLM Structures",

abstract = "Most modern silicon heterojunction solar cells use electron/hole-selective contacts in order to efficiently collect photogenerated carriers. Carrier-selective contacts are important as they block minority carriers and optimize the collection of majority carriers. However, these contact stacks contribute to the resistive loss of the solar cell which is detrimental to the overall device performance. In this paper we analyze the origin of these losses in a hole-collecting contact stack which consists of aSi:H(i)/a-Si:H(p)/ITO(n)/Ag through experiments and simulations. We analyze how the contact resistivity of the structure varies with changes in the intrinsic amorphous silicon layer thickness, temperature and ITO(n) doping. The transmission line method was used to characterize the resistive losses of the contact stack. The simulations were conducted using a commercial device simulator SILVACO. We include the ITO as a n-type semiconductor layer in our simulations.",

keywords = "amorphous silicon, device modeling, heterojunctions, silicon, simulation, solar cells, TLM",

author = "Pradyumna Muralidharan and Leilaeioun, {Ashling Mehdi} and William Weigand and Zachary Holman and Stephen Goodnick and Dragica Vasileska",

year = "2018",

month = nov,

day = "26",

doi = "10.1109/PVSC.2018.8548166",

language = "English (US)",

pages = "2166--2169",

booktitle = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 ; Conference date: 10-06-2018 Through 15-06-2018",

}

TY - GEN

T1 - Understanding Transport in Heterojunction Contact Stacks by Simulating Silicon Heterojunction TLM Structures

AU - Muralidharan, Pradyumna

AU - Leilaeioun, Ashling Mehdi

AU - Weigand, William

AU - Holman, Zachary

AU - Goodnick, Stephen

AU - Vasileska, Dragica

PY - 2018/11/26

Y1 - 2018/11/26

N2 - Most modern silicon heterojunction solar cells use electron/hole-selective contacts in order to efficiently collect photogenerated carriers. Carrier-selective contacts are important as they block minority carriers and optimize the collection of majority carriers. However, these contact stacks contribute to the resistive loss of the solar cell which is detrimental to the overall device performance. In this paper we analyze the origin of these losses in a hole-collecting contact stack which consists of aSi:H(i)/a-Si:H(p)/ITO(n)/Ag through experiments and simulations. We analyze how the contact resistivity of the structure varies with changes in the intrinsic amorphous silicon layer thickness, temperature and ITO(n) doping. The transmission line method was used to characterize the resistive losses of the contact stack. The simulations were conducted using a commercial device simulator SILVACO. We include the ITO as a n-type semiconductor layer in our simulations.

AB - Most modern silicon heterojunction solar cells use electron/hole-selective contacts in order to efficiently collect photogenerated carriers. Carrier-selective contacts are important as they block minority carriers and optimize the collection of majority carriers. However, these contact stacks contribute to the resistive loss of the solar cell which is detrimental to the overall device performance. In this paper we analyze the origin of these losses in a hole-collecting contact stack which consists of aSi:H(i)/a-Si:H(p)/ITO(n)/Ag through experiments and simulations. We analyze how the contact resistivity of the structure varies with changes in the intrinsic amorphous silicon layer thickness, temperature and ITO(n) doping. The transmission line method was used to characterize the resistive losses of the contact stack. The simulations were conducted using a commercial device simulator SILVACO. We include the ITO as a n-type semiconductor layer in our simulations.

KW - amorphous silicon

KW - device modeling

KW - heterojunctions

KW - silicon

KW - simulation

KW - solar cells

KW - TLM

UR - http://www.scopus.com/inward/record.url?scp=85059898563&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85059898563&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2018.8548166

DO - 10.1109/PVSC.2018.8548166

M3 - Conference contribution

AN - SCOPUS:85059898563

SP - 2166

EP - 2169

BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018

Y2 - 10 June 2018 through 15 June 2018

ER -