Abstract
Most modern silicon heterojunction solar cells use electron/hole-selective contacts in order to efficiently collect photogenerated carriers. Carrier-selective contacts are important as they block minority carriers and optimize the collection of majority carriers. However, these contact stacks contribute to the resistive loss of the solar cell which is detrimental to the overall device performance. In this paper we analyze the origin of these losses in a hole-collecting contact stack which consists of aSi:H(i)/a-Si:H(p)/ITO(n)/Ag through experiments and simulations. We analyze how the contact resistivity of the structure varies with changes in the intrinsic amorphous silicon layer thickness, temperature and ITO(n) doping. The transmission line method was used to characterize the resistive losses of the contact stack. The simulations were conducted using a commercial device simulator SILVACO. We include the ITO as a n-type semiconductor layer in our simulations.
| Original language | English (US) |
|---|---|
| Title of host publication | 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 2166-2169 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781538685297 |
| DOIs | |
| State | Published - Nov 26 2018 |
| Event | 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: Jun 10 2018 → Jun 15 2018 |
Other
| Other | 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 |
|---|---|
| Country | United States |
| City | Waikoloa Village |
| Period | 6/10/18 → 6/15/18 |
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Keywords
- amorphous silicon
- device modeling
- heterojunctions
- silicon
- simulation
- solar cells
- TLM
ASJC Scopus subject areas
- Energy Engineering and Power Technology
- Renewable Energy, Sustainability and the Environment
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Understanding Transport in Heterojunction Contact Stacks by Simulating Silicon Heterojunction TLM Structures. / Muralidharan, Pradyumna; Leilaeioun, Ashling Mehdi; Weigand, William; Holman, Zachary; Goodnick, Stephen; Vasileska, Dragica.
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. p. 2166-2169 8548166.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Understanding Transport in Heterojunction Contact Stacks by Simulating Silicon Heterojunction TLM Structures
AU - Muralidharan, Pradyumna
AU - Leilaeioun, Ashling Mehdi
AU - Weigand, William
AU - Holman, Zachary
AU - Goodnick, Stephen
AU - Vasileska, Dragica
PY - 2018/11/26
Y1 - 2018/11/26
N2 - Most modern silicon heterojunction solar cells use electron/hole-selective contacts in order to efficiently collect photogenerated carriers. Carrier-selective contacts are important as they block minority carriers and optimize the collection of majority carriers. However, these contact stacks contribute to the resistive loss of the solar cell which is detrimental to the overall device performance. In this paper we analyze the origin of these losses in a hole-collecting contact stack which consists of aSi:H(i)/a-Si:H(p)/ITO(n)/Ag through experiments and simulations. We analyze how the contact resistivity of the structure varies with changes in the intrinsic amorphous silicon layer thickness, temperature and ITO(n) doping. The transmission line method was used to characterize the resistive losses of the contact stack. The simulations were conducted using a commercial device simulator SILVACO. We include the ITO as a n-type semiconductor layer in our simulations.
AB - Most modern silicon heterojunction solar cells use electron/hole-selective contacts in order to efficiently collect photogenerated carriers. Carrier-selective contacts are important as they block minority carriers and optimize the collection of majority carriers. However, these contact stacks contribute to the resistive loss of the solar cell which is detrimental to the overall device performance. In this paper we analyze the origin of these losses in a hole-collecting contact stack which consists of aSi:H(i)/a-Si:H(p)/ITO(n)/Ag through experiments and simulations. We analyze how the contact resistivity of the structure varies with changes in the intrinsic amorphous silicon layer thickness, temperature and ITO(n) doping. The transmission line method was used to characterize the resistive losses of the contact stack. The simulations were conducted using a commercial device simulator SILVACO. We include the ITO as a n-type semiconductor layer in our simulations.
KW - amorphous silicon
KW - device modeling
KW - heterojunctions
KW - silicon
KW - simulation
KW - solar cells
KW - TLM
UR - http://www.scopus.com/inward/record.url?scp=85059898563&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85059898563&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2018.8548166
DO - 10.1109/PVSC.2018.8548166
M3 - Conference contribution
AN - SCOPUS:85059898563
SP - 2166
EP - 2169
BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
PB - Institute of Electrical and Electronics Engineers Inc.
ER -