Most modern silicon heterojunction solar cells use electron/hole-selective contacts in order to efficiently collect photogenerated carriers. Carrier-selective contacts are important as they block minority carriers and optimize the collection of majority carriers. However, these contact stacks contribute to the resistive loss of the solar cell which is detrimental to the overall device performance. In this paper we analyze the origin of these losses in a hole-collecting contact stack which consists of aSi:H(i)/a-Si:H(p)/ITO(n)/Ag through experiments and simulations. We analyze how the contact resistivity of the structure varies with changes in the intrinsic amorphous silicon layer thickness, temperature and ITO(n) doping. The transmission line method was used to characterize the resistive losses of the contact stack. The simulations were conducted using a commercial device simulator SILVACO. We include the ITO as a n-type semiconductor layer in our simulations.

Original languageEnglish (US)
Title of host publication2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)9781538685297
StatePublished - Nov 26 2018
Event7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States
Duration: Jun 10 2018Jun 15 2018


Other7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
CountryUnited States
CityWaikoloa Village


  • amorphous silicon
  • device modeling
  • heterojunctions
  • silicon
  • simulation
  • solar cells
  • TLM

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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