Understanding the origin of Tabula Rasa process-induced defects in CZ n-type c-Si

Jorge Ochoa, Vincenzo Lasalvia, Paul Stradins, Mariana I. Bertoni

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High-temperature annealing, known as Tabula Rasa (TR) has been the subject of recent studies as a method to make n-type CZ silicon material resistant to temperature-induced and process-induced lifetime degradation during solar cell fabrication. In this work, we study the defects responsible for the lifetime changes after TR treatment. We use temperature and injection dependent lifetime spectroscopy (T-IDLS) and the recently introduce defect parameter contour mapping to identify the Energy Level (Et) and capture cross-section ratio (k) of the most likely process-induced defect. We also present a closer look at changes in surface recombination velocity before and after TR annealing.

Original languageEnglish (US)
Title of host publication2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2021-2024
Number of pages4
ISBN (Electronic)9781728161150
DOIs
StatePublished - Jun 14 2020
Event47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada
Duration: Jun 15 2020Aug 21 2020

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2020-June
ISSN (Print)0160-8371

Conference

Conference47th IEEE Photovoltaic Specialists Conference, PVSC 2020
CountryCanada
CityCalgary
Period6/15/208/21/20

Keywords

  • bulk lifetime
  • defect characterization
  • DPCM
  • Tabula Rasa
  • thermally induced degradation

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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