@inproceedings{fbdf8e995a9f4745a8654b0afc30577a,
title = "Understanding the origin of Tabula Rasa process-induced defects in CZ n-type c-Si",
abstract = "High-temperature annealing, known as Tabula Rasa (TR) has been the subject of recent studies as a method to make n-type CZ silicon material resistant to temperature-induced and process-induced lifetime degradation during solar cell fabrication. In this work, we study the defects responsible for the lifetime changes after TR treatment. We use temperature and injection dependent lifetime spectroscopy (T-IDLS) and the recently introduce defect parameter contour mapping to identify the Energy Level (Et) and capture cross-section ratio (k) of the most likely process-induced defect. We also present a closer look at changes in surface recombination velocity before and after TR annealing.",
keywords = "bulk lifetime, defect characterization, DPCM, Tabula Rasa, thermally induced degradation",
author = "Jorge Ochoa and Vincenzo Lasalvia and Paul Stradins and Bertoni, {Mariana I.}",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.; 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 ; Conference date: 15-06-2020 Through 21-08-2020",
year = "2020",
month = jun,
day = "14",
doi = "10.1109/PVSC45281.2020.9300530",
language = "English (US)",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "2021--2024",
booktitle = "2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020",
}