Understanding the conduction and switching mechanism of metal oxide RRAM through low frequency noise and AC conductance measurement and analysis

Shimeng Yu; Rakesh Jeyasingh; Yi Wu; H. S. Philip Wong

doi:10.1109/IEDM.2011.6131537

Understanding the conduction and switching mechanism of metal oxide RRAM through low frequency noise and AC conductance measurement and analysis

Shimeng Yu, Rakesh Jeyasingh, Yi Wu, H. S. Philip Wong

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

20 Scopus citations

Abstract

Low frequency noise (LFN) and AC conductance measurement and analysis were performed on bipolar metal oxide resistive switching random access memory (RRAM) devices. The DC noise current power spectral density is 1/f ^α- like (1<α<2) and the AC conductance is f ^β-like (β∼2). An electron tunneling model was established to elucidate the filamentary conduction process: the observed LFN behavior is a result of the distribution of transition time of electron tunneling between the electrode and the traps in the conductive filaments; and the observed AC conductance behavior arises from the electron tunneling between the nearest neighbor traps within the CFs.

Original language	English (US)
Title of host publication	2011 International Electron Devices Meeting, IEDM 2011
Pages	12.1.1-12.1.4
DOIs	https://doi.org/10.1109/IEDM.2011.6131537
State	Published - 2011
Externally published	Yes
Event	2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States Duration: Dec 5 2011 → Dec 7 2011

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2011 IEEE International Electron Devices Meeting, IEDM 2011
Country/Territory	United States
City	Washington, DC
Period	12/5/11 → 12/7/11

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2011.6131537

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Yu, S., Jeyasingh, R., Wu, Y., & Philip Wong, H. S. (2011). Understanding the conduction and switching mechanism of metal oxide RRAM through low frequency noise and AC conductance measurement and analysis. In 2011 International Electron Devices Meeting, IEDM 2011 (pp. 12.1.1-12.1.4). Article 6131537 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2011.6131537

Understanding the conduction and switching mechanism of metal oxide RRAM through low frequency noise and AC conductance measurement and analysis. / Yu, Shimeng; Jeyasingh, Rakesh; Wu, Yi et al.
2011 International Electron Devices Meeting, IEDM 2011. 2011. p. 12.1.1-12.1.4 6131537 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yu, S, Jeyasingh, R, Wu, Y & Philip Wong, HS 2011, Understanding the conduction and switching mechanism of metal oxide RRAM through low frequency noise and AC conductance measurement and analysis. in 2011 International Electron Devices Meeting, IEDM 2011., 6131537, Technical Digest - International Electron Devices Meeting, IEDM, pp. 12.1.1-12.1.4, 2011 IEEE International Electron Devices Meeting, IEDM 2011, Washington, DC, United States, 12/5/11. https://doi.org/10.1109/IEDM.2011.6131537

Yu S, Jeyasingh R, Wu Y, Philip Wong HS. Understanding the conduction and switching mechanism of metal oxide RRAM through low frequency noise and AC conductance measurement and analysis. In 2011 International Electron Devices Meeting, IEDM 2011. 2011. p. 12.1.1-12.1.4. 6131537. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2011.6131537

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abstract = "Low frequency noise (LFN) and AC conductance measurement and analysis were performed on bipolar metal oxide resistive switching random access memory (RRAM) devices. The DC noise current power spectral density is 1/f α- like (1<α<2) and the AC conductance is f β-like (β∼2). An electron tunneling model was established to elucidate the filamentary conduction process: the observed LFN behavior is a result of the distribution of transition time of electron tunneling between the electrode and the traps in the conductive filaments; and the observed AC conductance behavior arises from the electron tunneling between the nearest neighbor traps within the CFs.",

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AB - Low frequency noise (LFN) and AC conductance measurement and analysis were performed on bipolar metal oxide resistive switching random access memory (RRAM) devices. The DC noise current power spectral density is 1/f α- like (1<α<2) and the AC conductance is f β-like (β∼2). An electron tunneling model was established to elucidate the filamentary conduction process: the observed LFN behavior is a result of the distribution of transition time of electron tunneling between the electrode and the traps in the conductive filaments; and the observed AC conductance behavior arises from the electron tunneling between the nearest neighbor traps within the CFs.

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Understanding the conduction and switching mechanism of metal oxide RRAM through low frequency noise and AC conductance measurement and analysis

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