Understanding the conduction and switching mechanism of metal oxide RRAM through low frequency noise and AC conductance measurement and analysis

Shimeng Yu, Rakesh Jeyasingh, Yi Wu, H. S. Philip Wong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Abstract

Low frequency noise (LFN) and AC conductance measurement and analysis were performed on bipolar metal oxide resistive switching random access memory (RRAM) devices. The DC noise current power spectral density is 1/f α- like (1<α<2) and the AC conductance is f β-like (β∼2). An electron tunneling model was established to elucidate the filamentary conduction process: the observed LFN behavior is a result of the distribution of transition time of electron tunneling between the electrode and the traps in the conductive filaments; and the observed AC conductance behavior arises from the electron tunneling between the nearest neighbor traps within the CFs.

Original languageEnglish (US)
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
StatePublished - 2011
Externally publishedYes
Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
Duration: Dec 5 2011Dec 7 2011

Other

Other2011 IEEE International Electron Devices Meeting, IEDM 2011
CountryUnited States
CityWashington, DC
Period12/5/1112/7/11

Fingerprint

Electron tunneling
random access memory
electron tunneling
Oxides
metal oxides
alternating current
Metals
low frequencies
Data storage equipment
conduction
traps
Power spectral density
Electron transitions
filaments
direct current
Electrodes
electrodes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Yu, S., Jeyasingh, R., Wu, Y., & Philip Wong, H. S. (2011). Understanding the conduction and switching mechanism of metal oxide RRAM through low frequency noise and AC conductance measurement and analysis. In Technical Digest - International Electron Devices Meeting, IEDM [6131537] https://doi.org/10.1109/IEDM.2011.6131537

Understanding the conduction and switching mechanism of metal oxide RRAM through low frequency noise and AC conductance measurement and analysis. / Yu, Shimeng; Jeyasingh, Rakesh; Wu, Yi; Philip Wong, H. S.

Technical Digest - International Electron Devices Meeting, IEDM. 2011. 6131537.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yu, S, Jeyasingh, R, Wu, Y & Philip Wong, HS 2011, Understanding the conduction and switching mechanism of metal oxide RRAM through low frequency noise and AC conductance measurement and analysis. in Technical Digest - International Electron Devices Meeting, IEDM., 6131537, 2011 IEEE International Electron Devices Meeting, IEDM 2011, Washington, DC, United States, 12/5/11. https://doi.org/10.1109/IEDM.2011.6131537
Yu S, Jeyasingh R, Wu Y, Philip Wong HS. Understanding the conduction and switching mechanism of metal oxide RRAM through low frequency noise and AC conductance measurement and analysis. In Technical Digest - International Electron Devices Meeting, IEDM. 2011. 6131537 https://doi.org/10.1109/IEDM.2011.6131537
Yu, Shimeng ; Jeyasingh, Rakesh ; Wu, Yi ; Philip Wong, H. S. / Understanding the conduction and switching mechanism of metal oxide RRAM through low frequency noise and AC conductance measurement and analysis. Technical Digest - International Electron Devices Meeting, IEDM. 2011.
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