Understanding the conduction and switching mechanism of metal oxide RRAM through low frequency noise and AC conductance measurement and analysis

Shimeng Yu, Rakesh Jeyasingh, Yi Wu, H. S. Philip Wong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Scopus citations

Abstract

Low frequency noise (LFN) and AC conductance measurement and analysis were performed on bipolar metal oxide resistive switching random access memory (RRAM) devices. The DC noise current power spectral density is 1/f α- like (1<α<2) and the AC conductance is f β-like (β∼2). An electron tunneling model was established to elucidate the filamentary conduction process: the observed LFN behavior is a result of the distribution of transition time of electron tunneling between the electrode and the traps in the conductive filaments; and the observed AC conductance behavior arises from the electron tunneling between the nearest neighbor traps within the CFs.

Original languageEnglish (US)
Title of host publication2011 International Electron Devices Meeting, IEDM 2011
Pages12.1.1-12.1.4
DOIs
StatePublished - Dec 1 2011
Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
Duration: Dec 5 2011Dec 7 2011

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2011 IEEE International Electron Devices Meeting, IEDM 2011
CountryUnited States
CityWashington, DC
Period12/5/1112/7/11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Yu, S., Jeyasingh, R., Wu, Y., & Philip Wong, H. S. (2011). Understanding the conduction and switching mechanism of metal oxide RRAM through low frequency noise and AC conductance measurement and analysis. In 2011 International Electron Devices Meeting, IEDM 2011 (pp. 12.1.1-12.1.4). [6131537] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2011.6131537