Understanding metal oxide RRAM current overshoot and reliability using Kinetic Monte Carlo simulation

Shimeng Yu, Ximeng Guan, H. S Philip Wong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

21 Citations (Scopus)

Abstract

A Kinetic Monte Carlo (KMC) numerical simulator is developed for metal oxide resistive random access memory (RRAM). In this work, substantial improvements are made on the stochastic model in [1] by including multiple conduction mechanisms, local field and local temperature profile, and tracking of the individual oxygen migration path. The improved simulator shows extended capability to study a full set of RRAM characteristics such as set/forming current overshoot, endurance, and retention, etc. The simulations suggest that 1) eliminating the forming process and decreasing the parasitic capacitance is required for minimizing the overshoot effect and reducing the reset power consumption; 2) the degradation of endurance can be explained by oxygen escaping from the electrode during cycling; 3) the oxygen migration barrier can be extracted from the retention baking test over a suitable temperature range.

Original languageEnglish (US)
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
StatePublished - 2012
Externally publishedYes
Event2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States
Duration: Dec 10 2012Dec 13 2012

Other

Other2012 IEEE International Electron Devices Meeting, IEDM 2012
CountryUnited States
CitySan Francisco, CA
Period12/10/1212/13/12

Fingerprint

random access memory
Oxides
metal oxides
endurance
Metals
Oxygen
Data storage equipment
simulators
Kinetics
kinetics
Durability
oxygen
Simulators
baking
simulation
Stochastic models
temperature profiles
Electric power utilization
Capacitance
capacitance

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Yu, S., Guan, X., & Wong, H. S. P. (2012). Understanding metal oxide RRAM current overshoot and reliability using Kinetic Monte Carlo simulation. In Technical Digest - International Electron Devices Meeting, IEDM [6479105] https://doi.org/10.1109/IEDM.2012.6479105

Understanding metal oxide RRAM current overshoot and reliability using Kinetic Monte Carlo simulation. / Yu, Shimeng; Guan, Ximeng; Wong, H. S Philip.

Technical Digest - International Electron Devices Meeting, IEDM. 2012. 6479105.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yu, S, Guan, X & Wong, HSP 2012, Understanding metal oxide RRAM current overshoot and reliability using Kinetic Monte Carlo simulation. in Technical Digest - International Electron Devices Meeting, IEDM., 6479105, 2012 IEEE International Electron Devices Meeting, IEDM 2012, San Francisco, CA, United States, 12/10/12. https://doi.org/10.1109/IEDM.2012.6479105
Yu S, Guan X, Wong HSP. Understanding metal oxide RRAM current overshoot and reliability using Kinetic Monte Carlo simulation. In Technical Digest - International Electron Devices Meeting, IEDM. 2012. 6479105 https://doi.org/10.1109/IEDM.2012.6479105
Yu, Shimeng ; Guan, Ximeng ; Wong, H. S Philip. / Understanding metal oxide RRAM current overshoot and reliability using Kinetic Monte Carlo simulation. Technical Digest - International Electron Devices Meeting, IEDM. 2012.
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