Understanding metal oxide RRAM current overshoot and reliability using Kinetic Monte Carlo simulation

Shimeng Yu, Ximeng Guan, H. S.Philip Wong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

22 Scopus citations

Abstract

A Kinetic Monte Carlo (KMC) numerical simulator is developed for metal oxide resistive random access memory (RRAM). In this work, substantial improvements are made on the stochastic model in [1] by including multiple conduction mechanisms, local field and local temperature profile, and tracking of the individual oxygen migration path. The improved simulator shows extended capability to study a full set of RRAM characteristics such as set/forming current overshoot, endurance, and retention, etc. The simulations suggest that 1) eliminating the forming process and decreasing the parasitic capacitance is required for minimizing the overshoot effect and reducing the reset power consumption; 2) the degradation of endurance can be explained by oxygen escaping from the electrode during cycling; 3) the oxygen migration barrier can be extracted from the retention baking test over a suitable temperature range.

Original languageEnglish (US)
Title of host publication2012 IEEE International Electron Devices Meeting, IEDM 2012
Pages26.1.1-26.1.4
DOIs
StatePublished - Dec 1 2012
Event2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States
Duration: Dec 10 2012Dec 13 2012

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2012 IEEE International Electron Devices Meeting, IEDM 2012
CountryUnited States
CitySan Francisco, CA
Period12/10/1212/13/12

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Yu, S., Guan, X., & Wong, H. S. P. (2012). Understanding metal oxide RRAM current overshoot and reliability using Kinetic Monte Carlo simulation. In 2012 IEEE International Electron Devices Meeting, IEDM 2012 (pp. 26.1.1-26.1.4). [6479105] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2012.6479105