Understanding hole transport across amorphous Si passivation layers in Si heterojunction solar cells using Monte Carlo simulation

Pradyumna Muralidharan, Stephen M. Goodnick, Dragica Vasileska

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Passivation layers based on hydrogenated amorphous silicon (a-Si:H) have enabled silicon heterojunction solar cells to achieve high fill factors and conversion efficiencies. Traditionally, intrinsic a-Si:H(i) provides passivation between the doped a-Si and c-Si. However, studies have shown that there is a 2mA/cm2 optical loss associated with this layer. In this paper we explore the option of using a-SiOx:H(i) as a passivation layer as oxygen can used to create a passivation layer with a wider bandgap. We utilize an in-house kinetic Monte Carlo solver to simulate defect assisted transport across the heterointerface and the passivation layer. Our simulations show a strong correlation between multi-phonon transitions and overall device performance.

    Original languageEnglish (US)
    Title of host publication2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages314-316
    Number of pages3
    ISBN (Electronic)9781728104942
    DOIs
    StatePublished - Jun 2019
    Event46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States
    Duration: Jun 16 2019Jun 21 2019

    Publication series

    NameConference Record of the IEEE Photovoltaic Specialists Conference
    ISSN (Print)0160-8371

    Conference

    Conference46th IEEE Photovoltaic Specialists Conference, PVSC 2019
    CountryUnited States
    CityChicago
    Period6/16/196/21/19

    ASJC Scopus subject areas

    • Control and Systems Engineering
    • Industrial and Manufacturing Engineering
    • Electrical and Electronic Engineering

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  • Cite this

    Muralidharan, P., Goodnick, S. M., & Vasileska, D. (2019). Understanding hole transport across amorphous Si passivation layers in Si heterojunction solar cells using Monte Carlo simulation. In 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019 (pp. 314-316). [8980625] (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC40753.2019.8980625