TY - JOUR
T1 - Understanding heterogeneity in Genesis diamond-like carbon film using SIMS analysis of implants
AU - Jurewicz, Amy
AU - Burnett, Don S.
AU - Rieck, Karen D.
AU - Hervig, Richard
AU - Friedmann, Tom A.
AU - Williams, Peter
AU - Daghlian, Charles P.
AU - Wiens, Roger
N1 - Publisher Copyright:
© 2017, The Author(s).
PY - 2017/10/1
Y1 - 2017/10/1
N2 - An amorphous diamond-like carbon film deposited on silicon made at Sandia National Laboratory by pulsed laser deposition was one of several solar wind (SW) collectors used by the Genesis Mission (NASA Discovery Class Mission #5). The film was ~1 μm thick, amorphous, anhydrous, and had a high ratio of sp3–sp2 bonds (>50%). For 27 months of exposure to space at the first Lagrange point, the collectors were passively irradiated with SW (H fluence ~2 × 1016 ions cm−2; He fluence ~8 × 1014 ions cm−2). The radiation damage caused by the implanted H ions peaked at 12–14 nm below the surface of the film and that of He about 20–23 nm. To enable quantitative measurement of the SW fluences by secondary ion mass spectroscopy, minor isotopes of Mg (25Mg and 26Mg) were commercially implanted into flight-spare collectors at 75 keV and a fluence of 1 × 1014 ions cm−2. The shapes of analytical depth profiles, the rate at which the profiles were sputtered by a given beam current, and the intensity of ion yields are used to characterize the structure of the material in small areas (~200 × 200 ± 50 μm). Data were consistent with the hypothesis that minor structural changes in the film were induced by SW exposure.
AB - An amorphous diamond-like carbon film deposited on silicon made at Sandia National Laboratory by pulsed laser deposition was one of several solar wind (SW) collectors used by the Genesis Mission (NASA Discovery Class Mission #5). The film was ~1 μm thick, amorphous, anhydrous, and had a high ratio of sp3–sp2 bonds (>50%). For 27 months of exposure to space at the first Lagrange point, the collectors were passively irradiated with SW (H fluence ~2 × 1016 ions cm−2; He fluence ~8 × 1014 ions cm−2). The radiation damage caused by the implanted H ions peaked at 12–14 nm below the surface of the film and that of He about 20–23 nm. To enable quantitative measurement of the SW fluences by secondary ion mass spectroscopy, minor isotopes of Mg (25Mg and 26Mg) were commercially implanted into flight-spare collectors at 75 keV and a fluence of 1 × 1014 ions cm−2. The shapes of analytical depth profiles, the rate at which the profiles were sputtered by a given beam current, and the intensity of ion yields are used to characterize the structure of the material in small areas (~200 × 200 ± 50 μm). Data were consistent with the hypothesis that minor structural changes in the film were induced by SW exposure.
UR - http://www.scopus.com/inward/record.url?scp=85021835995&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85021835995&partnerID=8YFLogxK
U2 - 10.1007/s10853-017-1267-3
DO - 10.1007/s10853-017-1267-3
M3 - Article
AN - SCOPUS:85021835995
SN - 0022-2461
VL - 52
SP - 11282
EP - 11305
JO - Journal of Materials Science
JF - Journal of Materials Science
IS - 19
ER -