Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

J. Y. Tsao, S. Chowdhury, M. A. Hollis, D. Jena, N. M. Johnson, K. A. Jones, R. J. Kaplar, S. Rajan, C. G. Van de Walle, E. Bellotti, C. L. Chua, R. Collazo, M. E. Coltrin, J. A. Cooper, K. R. Evans, S. Graham, T. A. Grotjohn, E. R. Heller, M. Higashiwaki, M. S. IslamP. W. Juodawlkis, M. A. Khan, A. D. Koehler, J. H. Leach, U. K. Mishra, Robert Nemanich, R. C.N. Pilawa-Podgurski, J. B. Shealy, Z. Sitar, M. J. Tadjer, A. F. Witulski, M. Wraback, J. A. Simmons

Research output: Contribution to journalReview articlepeer-review

284 Scopus citations

Abstract

Ultrawide-bandgap (UWBG) semiconductors, with bandgaps significantly wider than the 3.4 eV of GaN, represent an exciting and challenging new area of research in semiconductor materials, physics, devices, and applications. Because many figures-of-merit for device performance scale nonlinearly with bandgap, these semiconductors have long been known to have compelling potential advantages over their narrower-bandgap cousins in high-power and RF electronics, as well as in deep-UV optoelectronics, quantum information, and extreme-environment applications. Only recently, however, have the UWBG semiconductor materials, such as high Al-content AlGaN, diamond and Ga2O3, advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near-term possibility. In this article, the materials, physics, device and application research opportunities and challenges for advancing their state of the art are surveyed.

Original languageEnglish (US)
Article number1600501
JournalAdvanced Electronic Materials
Volume4
Issue number1
DOIs
StatePublished - Jan 2018

Keywords

  • UV-C
  • aluminum nitride
  • boron nitride
  • diamond
  • extreme environments
  • gallium oxide
  • power electronics
  • ultrawide bandgaps

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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