Ultraviolet Raman study of A1(LO) and E2 phonons in InxGa1-xN alloys

Dimitri Alexson; Leah Bergman; Robert J. Nemanich; Mitra Dutta; Michael A. Stroscio; C. A. Parker; S. M. Bedair; N. A. El-Masry; Fran Adar

doi:10.1063/1.1330760

Ultraviolet Raman study of A₁(LO) and E₂ phonons in In_xGa_1-xN alloys

Dimitri Alexson, Leah Bergman, Robert J. Nemanich, Mitra Dutta, Michael A. Stroscio, C. A. Parker, S. M. Bedair, N. A. El-Masry, Fran Adar

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53 Scopus citations

Abstract

We report on ultraviolet Raman spectroscopy of In_xGa_1-xN thin films grown on sapphire by metal-organic chemical vapor deposition. The A₁(LO) and E₂ phonon mode behavior was investigated over a large compositional range (0<x<0.50). Compelling evidence is presented for one-mode behavior for the A₁(LO) phonon, and data suggestive of two-mode behavior are presented for the E₂ phonon.

Original language	English (US)
Pages (from-to)	798-800
Number of pages	3
Journal	Journal of Applied Physics
Volume	89
Issue number	1
DOIs	https://doi.org/10.1063/1.1330760
State	Published - Jan 1 2001
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.1330760

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abstract = "We report on ultraviolet Raman spectroscopy of InxGa1-xN thin films grown on sapphire by metal-organic chemical vapor deposition. The A1(LO) and E2 phonon mode behavior was investigated over a large compositional range (01(LO) phonon, and data suggestive of two-mode behavior are presented for the E2 phonon.",

author = "Dimitri Alexson and Leah Bergman and Nemanich, {Robert J.} and Mitra Dutta and Stroscio, {Michael A.} and Parker, {C. A.} and Bedair, {S. M.} and El-Masry, {N. A.} and Fran Adar",

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AU - Alexson, Dimitri

AU - Bergman, Leah

AU - Nemanich, Robert J.

AU - Dutta, Mitra

AU - Stroscio, Michael A.

AU - Parker, C. A.

AU - Bedair, S. M.

AU - El-Masry, N. A.

AU - Adar, Fran

PY - 2001/1/1

Y1 - 2001/1/1

N2 - We report on ultraviolet Raman spectroscopy of InxGa1-xN thin films grown on sapphire by metal-organic chemical vapor deposition. The A1(LO) and E2 phonon mode behavior was investigated over a large compositional range (01(LO) phonon, and data suggestive of two-mode behavior are presented for the E2 phonon.

AB - We report on ultraviolet Raman spectroscopy of InxGa1-xN thin films grown on sapphire by metal-organic chemical vapor deposition. The A1(LO) and E2 phonon mode behavior was investigated over a large compositional range (01(LO) phonon, and data suggestive of two-mode behavior are presented for the E2 phonon.

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Ultraviolet Raman study of A₁(LO) and E₂ phonons in In_xGa_1-xN alloys

Abstract

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