Ultraviolet Raman study of A1(LO) and E2 phonons in InxGa1-xN alloys

Dimitri Alexson, Leah Bergman, Robert J. Nemanich, Mitra Dutta, Michael A. Stroscio, C. A. Parker, S. M. Bedair, N. A. El-Masry, Fran Adar

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Abstract

We report on ultraviolet Raman spectroscopy of InxGa1-xN thin films grown on sapphire by metal-organic chemical vapor deposition. The A1(LO) and E2 phonon mode behavior was investigated over a large compositional range (0<x<0.50). Compelling evidence is presented for one-mode behavior for the A1(LO) phonon, and data suggestive of two-mode behavior are presented for the E2 phonon.

Original languageEnglish (US)
Pages (from-to)798-800
Number of pages3
JournalJournal of Applied Physics
Volume89
Issue number1
DOIs
StatePublished - Jan 1 2001
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Alexson, D., Bergman, L., Nemanich, R. J., Dutta, M., Stroscio, M. A., Parker, C. A., Bedair, S. M., El-Masry, N. A., & Adar, F. (2001). Ultraviolet Raman study of A1(LO) and E2 phonons in InxGa1-xN alloys. Journal of Applied Physics, 89(1), 798-800. https://doi.org/10.1063/1.1330760