Abstract
The generic parameters and processes involved in solid phase epitaxial growth of ultrathin films by contact reaction are discussed. The particular strengths of quantitative reflection high-energy electron diffraction (RHEED) and Auger line-shape analyses for separating coexisting phases are demonstrated with examples from the Ni/Si (111) system. Using RHEED Kikuchi patterns and rocking curves, we identify the ordered structures NiSi2 (mixed A and B type) and Ni2Si-0. From the Auger line shape we find that the low-coverage room-temperature material is disordered Ni2Si, the NiSi2 epitaxial layers are capped with a layer of excess silicon, and the surface layers pass through a NiSi like phase in the transformation from Ni2Si to NiSi2.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2174-2179 |
| Number of pages | 6 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 7 |
| Issue number | 3 |
| DOIs | |
| State | Published - May 1989 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films