@article{015270c18a2546d2b95d028be221e2db,
title = "Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates",
abstract = "We report the structural and electrical properties of ultrathin-barrier AlN/GaN heterostructures grown on freestanding GaN substrates by rf plasma-assisted molecular beam epitaxy. Structures with barrier thicknesses between 1.5 nm and 7.5 nm were grown and characterized. We observe that AlN/GaN structures with barriers of 3.0 nm exhibit the highest Hall mobility, approximately 1700 cm2/Vs. Furthermore, the Hall mobility is much diminished in heterostructures with AlN barriers thicker than 4.5 nm, coincident with the onset of strain relaxation.",
keywords = "A3. Molecular beam epitaxy, B1. Nitrides, B2. Semiconducting III-V materials, B3. High electron mobility transistors",
author = "Storm, {D. F.} and Deen, {D. A.} and Katzer, {D. S.} and Meyer, {D. J.} and Binari, {S. C.} and T. Gougousi and T. Paskova and Preble, {E. A.} and Evans, {K. R.} and David Smith",
note = "Funding Information: This work was supported by the Office of Naval Research under funding from Dr. P. Maki. The authors gratefully acknowledge the assistance of Neil Green for device processing and fabrication. We also acknowledge use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University and partial support (D.J.S.) from AFRL Contract FA-8650-08-C-1595 (Monitor: C. Bozada) and Wyle Laboratory Contract #DD-8192 (Monitor: S. Tetlak). The work at UMBC was supported in part by the National Science Foundation under Grant DMR 0846445 .",
year = "2013",
doi = "10.1016/j.jcrysgro.2013.05.029",
language = "English (US)",
volume = "380",
pages = "14--17",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
}