Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates

D. F. Storm, D. A. Deen, D. S. Katzer, D. J. Meyer, S. C. Binari, T. Gougousi, T. Paskova, E. A. Preble, K. R. Evans, David Smith

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17 Scopus citations

Abstract

We report the structural and electrical properties of ultrathin-barrier AlN/GaN heterostructures grown on freestanding GaN substrates by rf plasma-assisted molecular beam epitaxy. Structures with barrier thicknesses between 1.5 nm and 7.5 nm were grown and characterized. We observe that AlN/GaN structures with barriers of 3.0 nm exhibit the highest Hall mobility, approximately 1700 cm2/Vs. Furthermore, the Hall mobility is much diminished in heterostructures with AlN barriers thicker than 4.5 nm, coincident with the onset of strain relaxation.

Original languageEnglish (US)
Pages (from-to)14-17
Number of pages4
JournalJournal of Crystal Growth
Volume380
DOIs
StatePublished - Jul 3 2013

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Keywords

  • A3. Molecular beam epitaxy
  • B1. Nitrides
  • B2. Semiconducting III-V materials
  • B3. High electron mobility transistors

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Storm, D. F., Deen, D. A., Katzer, D. S., Meyer, D. J., Binari, S. C., Gougousi, T., Paskova, T., Preble, E. A., Evans, K. R., & Smith, D. (2013). Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates. Journal of Crystal Growth, 380, 14-17. https://doi.org/10.1016/j.jcrysgro.2013.05.029