Ultrasmall devices: Are we ready for quantum effects?

D. K. Ferry

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

It is clear that continued scaling of semiconductor devices will bring us to a regime with gate lengths of less than 70 nm within another decade. While there are questions to be answered in the fabrication of these devices, the questions that must be addressed in simulation are no less difficult. Indeed, pushing to dimensional sizes such as this will probe the transition from classical to quantum transport, and many new issues will arise that must be addressed. In this paper, several of these issues, connected with the discreteness of point charges and with the onset of quantum effects will be discussed.

Original languageEnglish (US)
Title of host publication2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000
EditorsM. Laudon, B. Romanowicz
Pages11-14
Number of pages4
StatePublished - Dec 1 2000
Event2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000 - San Diego, CA, United States
Duration: Mar 27 2000Mar 29 2000

Publication series

Name2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000

Other

Other2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000
CountryUnited States
CitySan Diego, CA
Period3/27/003/29/00

Keywords

  • Discrete impurities
  • Molecular dynamics
  • Quantum effects
  • Ultra-submicron devices

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Ferry, D. K. (2000). Ultrasmall devices: Are we ready for quantum effects? In M. Laudon, & B. Romanowicz (Eds.), 2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000 (pp. 11-14). (2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000).