Ultralow interface recombination velocity (∼1 cm/s) in CdTe/MgxCd1-xTe double-heterostructures

Xin Hao Zhao; Shi Liu; Calli M. Campbell; Yuan Zhao; Maxwell B. Lassise; Yong Hang Zhang

doi:10.1109/pvsc.2016.7750047

Ultralow interface recombination velocity (∼1 cm/s) in CdTe/Mg_xCd_1-xTe double-heterostructures

Xin Hao Zhao, Shi Liu, Calli M. Campbell, Yuan Zhao, Maxwell B. Lassise, Yong Hang Zhang

Engineering, Ira A. Fulton Schools of (IAFSE)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

CdTe/Mg_xCd_1-xTe double heterostructures (DHs) grown on InSb (001) substrates using molecular beam epitaxy have demonstrated very long carrier lifetime and low interface recombination velocity (IRV) due to the effective carrier confinement and surface passivation provided by Mg_xCd_1-xTe. However, both thermionic emission and tunneling effects can cause carrier loss over or through the Mg_xCd_1-xTe barriers when the barrier potential is low or when the barrier is thin. Thus carrier lifetime measurement can only give an effective IRV, which consists of the actual IRV that is purely due to recombination through interface trap states, and carrier loss due to thermionic emission and tunneling. By conducting temperature dependent carrier lifetime measurements, the thermionic emission induced interface recombination can be distinguished. Also by comparing samples with different barrier layer thicknesses, the contribution to effective IRV from tunneling effect can be quantified. When both thermionic emission and tunneling effects are eliminated, the actual IRV is measured to be ∼1 cm/s and a very long carrier lifetime of 3.6 μs is observed.

Original language	English (US)
Title of host publication	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2302-2305
Number of pages	4
ISBN (Electronic)	9781509056057
DOIs	https://doi.org/10.1109/pvsc.2016.7750047
State	Published - 2017
Event	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: Jun 25 2017 → Jun 30 2017

Publication series

Name	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Other

Other	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Country/Territory	United States
City	Washington
Period	6/25/17 → 6/30/17

Keywords

Carrier Lifetime
CdTe
Interface Recombination Velocity
MBE
Solar Cell

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/pvsc.2016.7750047

Cite this

Zhao, X. H., Liu, S., Campbell, C. M., Zhao, Y., Lassise, M. B., & Zhang, Y. H. (2017). Ultralow interface recombination velocity (∼1 cm/s) in CdTe/Mg_xCd_1-xTe double-heterostructures. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 2302-2305). (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/pvsc.2016.7750047

Ultralow interface recombination velocity (∼1 cm/s) in CdTe/Mg_xCd_1-xTe double-heterostructures. / Zhao, Xin Hao; Liu, Shi; Campbell, Calli M. et al.
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 2302-2305 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhao, XH, Liu, S, Campbell, CM, Zhao, Y, Lassise, MB & Zhang, YH 2017, Ultralow interface recombination velocity (∼1 cm/s) in CdTe/Mg_xCd_1-xTe double-heterostructures. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017, Institute of Electrical and Electronics Engineers Inc., pp. 2302-2305, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 6/25/17. https://doi.org/10.1109/pvsc.2016.7750047

Zhao XH, Liu S, Campbell CM, Zhao Y, Lassise MB, Zhang YH. Ultralow interface recombination velocity (∼1 cm/s) in CdTe/Mg_xCd_1-xTe double-heterostructures. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 2302-2305. (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). doi: 10.1109/pvsc.2016.7750047

@inproceedings{a1234ab8f0b94282a725dd1b5342ab1c,

title = "Ultralow interface recombination velocity (∼1 cm/s) in CdTe/MgxCd1-xTe double-heterostructures",

abstract = "CdTe/MgxCd1-xTe double heterostructures (DHs) grown on InSb (001) substrates using molecular beam epitaxy have demonstrated very long carrier lifetime and low interface recombination velocity (IRV) due to the effective carrier confinement and surface passivation provided by MgxCd1-xTe. However, both thermionic emission and tunneling effects can cause carrier loss over or through the MgxCd1-xTe barriers when the barrier potential is low or when the barrier is thin. Thus carrier lifetime measurement can only give an effective IRV, which consists of the actual IRV that is purely due to recombination through interface trap states, and carrier loss due to thermionic emission and tunneling. By conducting temperature dependent carrier lifetime measurements, the thermionic emission induced interface recombination can be distinguished. Also by comparing samples with different barrier layer thicknesses, the contribution to effective IRV from tunneling effect can be quantified. When both thermionic emission and tunneling effects are eliminated, the actual IRV is measured to be ∼1 cm/s and a very long carrier lifetime of 3.6 μs is observed.",

keywords = "Carrier Lifetime, CdTe, Interface Recombination Velocity, MBE, Solar Cell",

author = "Zhao, {Xin Hao} and Shi Liu and Campbell, {Calli M.} and Yuan Zhao and Lassise, {Maxwell B.} and Zhang, {Yong Hang}",

note = "Funding Information: The authors gratefully acknowledge the use of time-correlated single-photon-counting system in the Ultra-fast Laser Facility at the Arizona State University Biodesign Institute. This work was supported in part by the Department of Energy (DOE) FPACE II program under Contract DE-AC36-08GO28308, DOE/Bay Area Photovoltaic Consortium program under Award DEEE0004946, and the Air Force Office of Scientific Research under Grant FA9550-12-1-0444. Publisher Copyright: {\textcopyright} 2017 IEEE.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",

year = "2017",

doi = "10.1109/pvsc.2016.7750047",

language = "English (US)",

series = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "2302--2305",

booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

}

TY - GEN

T1 - Ultralow interface recombination velocity (∼1 cm/s) in CdTe/MgxCd1-xTe double-heterostructures

AU - Zhao, Xin Hao

AU - Liu, Shi

AU - Campbell, Calli M.

AU - Zhao, Yuan

AU - Lassise, Maxwell B.

AU - Zhang, Yong Hang

N1 - Funding Information: The authors gratefully acknowledge the use of time-correlated single-photon-counting system in the Ultra-fast Laser Facility at the Arizona State University Biodesign Institute. This work was supported in part by the Department of Energy (DOE) FPACE II program under Contract DE-AC36-08GO28308, DOE/Bay Area Photovoltaic Consortium program under Award DEEE0004946, and the Air Force Office of Scientific Research under Grant FA9550-12-1-0444. Publisher Copyright: © 2017 IEEE.

PY - 2017

Y1 - 2017

N2 - CdTe/MgxCd1-xTe double heterostructures (DHs) grown on InSb (001) substrates using molecular beam epitaxy have demonstrated very long carrier lifetime and low interface recombination velocity (IRV) due to the effective carrier confinement and surface passivation provided by MgxCd1-xTe. However, both thermionic emission and tunneling effects can cause carrier loss over or through the MgxCd1-xTe barriers when the barrier potential is low or when the barrier is thin. Thus carrier lifetime measurement can only give an effective IRV, which consists of the actual IRV that is purely due to recombination through interface trap states, and carrier loss due to thermionic emission and tunneling. By conducting temperature dependent carrier lifetime measurements, the thermionic emission induced interface recombination can be distinguished. Also by comparing samples with different barrier layer thicknesses, the contribution to effective IRV from tunneling effect can be quantified. When both thermionic emission and tunneling effects are eliminated, the actual IRV is measured to be ∼1 cm/s and a very long carrier lifetime of 3.6 μs is observed.

AB - CdTe/MgxCd1-xTe double heterostructures (DHs) grown on InSb (001) substrates using molecular beam epitaxy have demonstrated very long carrier lifetime and low interface recombination velocity (IRV) due to the effective carrier confinement and surface passivation provided by MgxCd1-xTe. However, both thermionic emission and tunneling effects can cause carrier loss over or through the MgxCd1-xTe barriers when the barrier potential is low or when the barrier is thin. Thus carrier lifetime measurement can only give an effective IRV, which consists of the actual IRV that is purely due to recombination through interface trap states, and carrier loss due to thermionic emission and tunneling. By conducting temperature dependent carrier lifetime measurements, the thermionic emission induced interface recombination can be distinguished. Also by comparing samples with different barrier layer thicknesses, the contribution to effective IRV from tunneling effect can be quantified. When both thermionic emission and tunneling effects are eliminated, the actual IRV is measured to be ∼1 cm/s and a very long carrier lifetime of 3.6 μs is observed.

KW - Carrier Lifetime

KW - CdTe

KW - Interface Recombination Velocity

KW - MBE

KW - Solar Cell

UR - http://www.scopus.com/inward/record.url?scp=85048485688&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85048485688&partnerID=8YFLogxK

U2 - 10.1109/pvsc.2016.7750047

DO - 10.1109/pvsc.2016.7750047

M3 - Conference contribution

AN - SCOPUS:85048485688

T3 - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

SP - 2302

EP - 2305

BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017

Y2 - 25 June 2017 through 30 June 2017

ER -