Ultralow interface recombination velocity (∼1 cm/s) in CdTe/MgxCd1-xTe double-heterostructures

Xin Hao Zhao, Shi Liu, Calli M. Campbell, Yuan Zhao, Maxwell B. Lassise, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

CdTe/MgxCd1-xTe double heterostructures (DHs) grown on InSb (001) substrates using molecular beam epitaxy have demonstrated very long carrier lifetime and low interface recombination velocity (IRV) due to the effective carrier confinement and surface passivation provided by MgxCd1-xTe. However, both thermionic emission and tunneling effects can cause carrier loss over or through the MgxCd1-xTe barriers when the barrier potential is low or when the barrier is thin. Thus carrier lifetime measurement can only give an effective IRV, which consists of the actual IRV that is purely due to recombination through interface trap states, and carrier loss due to thermionic emission and tunneling. By conducting temperature dependent carrier lifetime measurements, the thermionic emission induced interface recombination can be distinguished. Also by comparing samples with different barrier layer thicknesses, the contribution to effective IRV from tunneling effect can be quantified. When both thermionic emission and tunneling effects are eliminated, the actual IRV is measured to be ∼1 cm/s and a very long carrier lifetime of 3.6 μs is observed.

Original languageEnglish (US)
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
ISBN (Electronic)9781509056057
DOIs
StatePublished - May 25 2018
Event44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
Duration: Jun 25 2017Jun 30 2017

Other

Other44th IEEE Photovoltaic Specialist Conference, PVSC 2017
CountryUnited States
CityWashington
Period6/25/176/30/17

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Thermionic emission
Carrier lifetime
Heterojunctions
Passivation
Molecular beam epitaxy
Substrates
Temperature

Keywords

  • Carrier Lifetime
  • CdTe
  • Interface Recombination Velocity
  • MBE
  • Solar Cell

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Zhao, X. H., Liu, S., Campbell, C. M., Zhao, Y., Lassise, M. B., & Zhang, Y-H. (2018). Ultralow interface recombination velocity (∼1 cm/s) in CdTe/MgxCd1-xTe double-heterostructures. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1-4). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366526

Ultralow interface recombination velocity (∼1 cm/s) in CdTe/MgxCd1-xTe double-heterostructures. / Zhao, Xin Hao; Liu, Shi; Campbell, Calli M.; Zhao, Yuan; Lassise, Maxwell B.; Zhang, Yong-Hang.

2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-4.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zhao, XH, Liu, S, Campbell, CM, Zhao, Y, Lassise, MB & Zhang, Y-H 2018, Ultralow interface recombination velocity (∼1 cm/s) in CdTe/MgxCd1-xTe double-heterostructures. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., pp. 1-4, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 6/25/17. https://doi.org/10.1109/PVSC.2017.8366526
Zhao XH, Liu S, Campbell CM, Zhao Y, Lassise MB, Zhang Y-H. Ultralow interface recombination velocity (∼1 cm/s) in CdTe/MgxCd1-xTe double-heterostructures. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-4 https://doi.org/10.1109/PVSC.2017.8366526
Zhao, Xin Hao ; Liu, Shi ; Campbell, Calli M. ; Zhao, Yuan ; Lassise, Maxwell B. ; Zhang, Yong-Hang. / Ultralow interface recombination velocity (∼1 cm/s) in CdTe/MgxCd1-xTe double-heterostructures. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1-4
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