Ultralow Interface Recombination Velocity (∼1 cm/s) at CdTe/MgxCd1-xTe Heterointerface

Xin Hao Zhao, Shi Liu, Calli M. Campbell, Zhao Yuan, Maxwell B. Lassise, Yong-Hang Zhang

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


The interface recombination velocity (IRV) at the interfaces in CdTe/MgxCd1-xTe double heterostructures (DHs) is studied using time-resolved photoluminescence. It is found that both thermionic emission and tunneling effects can cause photogenerated carrier loss over or through the Mgx Cd1-x Te barriers, either due to the low barrier potential or the thin barrier thickness. Thus, carrier lifetime measurements reveal only an effective IRV. The thermionic emission induced interface recombination can be distinguished by conducting temperature-dependent carrier lifetime measurements, and the tunneling induced IRV can be quantified by comparing samples with different barrier thicknesses. When both thermionic emission and tunneling effects are suppressed or even eliminated, the actual IRV (due to the recombination at the DH interface trap states) is measured to be ∼1 cm/s, with a very long carrier lifetime of 3.6 μs achieved in the DHs.

Original languageEnglish (US)
Article number7888444
Pages (from-to)913-918
Number of pages6
JournalIEEE Journal of Photovoltaics
Issue number3
StatePublished - May 2017


  • Carrier lifetime
  • CdTe
  • interface recombination velocity (IRV)
  • molecular beam epitaxy (MBE)
  • solar cell

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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